Patents by Inventor Nobuo Nakamura

Nobuo Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8598508
    Abstract: An imaging device including an electronic shutter and a pixel array with color pixels with different characteristics of spectral sensitivity arranged. The pixel array part has at least one clear pixel, the plurality of color pixels including (i) a first color filter pixel having a peak of spectral sensitivity characteristics for red, (ii) a second color filter pixel having a peak for blue, and (iii) a third color filter pixel having a peak for green. The clear pixel has a high transmittance arranged in an oblique pixel array system at a given position of a given row and a given column with respect to the first color filter pixel, the second color filter pixel, and the third color filter pixel. An electronic shutter is separately driven for the at least one clear pixel and for the plurality of color filter pixels.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: December 3, 2013
    Assignee: Sony Corporation
    Inventors: Junichi Kanai, Nobuo Nakamura
  • Patent number: 8587688
    Abstract: Solid-state image pickup device and processing method, with A/D conversion on pixel signals read from a pixel array part that effectively achieves reductions in power consumption, size and price while retaining a high-quality image output. The device includes a pixel array part, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read via a signal line is subjected to noise elimination processing in the CDS circuit, and is then inputted into the A/D converter. The A/D converter includes a ?? modulator and a digital filter to perform highly accurate A/D conversion. The A/D converter can also be provided at the front stage of the CDS circuit.
    Type: Grant
    Filed: October 17, 2011
    Date of Patent: November 19, 2013
    Assignee: Sony Corporation
    Inventors: Hiroki Sato, Keiji Mabuchi, Nobuo Nakamura, Tetsuya Iizuka
  • Publication number: 20130284891
    Abstract: An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.
    Type: Application
    Filed: June 28, 2013
    Publication date: October 31, 2013
    Inventors: Nobuo NAKAMURA, Shoji KAWAHITO, Hiroki SATO, Mizuho HIGASHI
  • Publication number: 20130265471
    Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
    Type: Application
    Filed: June 5, 2013
    Publication date: October 10, 2013
    Inventors: TAKASHI ABE, NOBUO NAKAMURA, TOMOYUKI UMEDA, KEIJI MABUCHI, HIROAKI FUJITA, EIICHI FUNATSU, HIROKI SATO
  • Publication number: 20130224500
    Abstract: [Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.60 dB and which can be produced in a high yield, as well as an optical isolator. [Solving means] Provided is a bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the bismuth-substituted rare-earth iron garnet crystal film is represented by a chemical formula of La3-x-yGdxBiyFe5O12 (provided that 0<x<3 and 0<y<3), and a composition ratio between the La, Gd, and Bi falls within a numeric value range corresponding to the inside of a quadrilateral having composition points A, B, C, and D as vertices in a La—Gd—Bi ternary composition diagram: composition point A (La: 0.15, Gd: 1.66, Bi: 1.19), composition point B (La: 0.32, Gd: 1.88, Bi: 0.80), composition point C (La: 0.52, Gd: 1.68, Bi: 0.80), and composition point D (La: 0.35, Gd: 1.
    Type: Application
    Filed: November 10, 2011
    Publication date: August 29, 2013
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Shuuji Oosumi, Yasutaka Nomi, Nobuo Nakamura, Hiroshi Hatanaka, Tomio Kajigaya
  • Publication number: 20130224520
    Abstract: [Object] To provide a bismuth-substituted rare-earth iron garnet crystal film (RIG) which has an insertion loss of less than 0.6 dB and which can be produced in a high yield, as well as an optical isolator. [Solving means] Provided is a bismuth-substituted rare-earth iron garnet crystal film which is grown by liquid phase epitaxy on a non-magnetic garnet substrate represented by a chemical formula of Gd3(ScGa)5O12, wherein the RIG is represented by a chemical formula of Nd3-x-yGdxBiyFe5O12, and x and y satisfy 0.89×1.43 and 0.85?y?1.19. In contrast to conventional RIGs, the RIG represented by the chemical formula of Nd3-x-yGdxBiyFe5O12 of the present invention has an insertion loss of less than 0.6 dB and makes it possible to reduce the amount of heat generated because of absorption of light at wavelengths of about 1 ?m. Hence, the RIG has such a remarkable effect that the RIG can be used as a Faraday rotator used for an optical isolator in a high-power laser device for processing.
    Type: Application
    Filed: November 10, 2011
    Publication date: August 29, 2013
    Applicant: SUMITOMO METAL MINING CO., LTD.
    Inventors: Shuuji Oosumi, Yasutaka Nomi, Nobuo Nakamura, Hiroshi Hatanaka, Tomio Kajigaya
  • Patent number: 8514311
    Abstract: An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.
    Type: Grant
    Filed: February 27, 2012
    Date of Patent: August 20, 2013
    Assignee: Sony Corporation
    Inventors: Nobuo Nakamura, Shoji Kawahito, Hiroki Sato, Mizuho Higashi
  • Patent number: 8482643
    Abstract: A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell (30) includes two pixels (31) and (32). Upper and lower photoelectric converters (33) and (34), transfer transistors (35) and (36) connected to the upper and lower photoelectric converters, respectively, a reset transistor (37), and an amplifying transistor (38) form the two pixels (31) and (32). A full-face signal line 39 is connected to the respective drains of the reset transistor (37) and the amplifying transistor (38). Controlling the full-face signal line (39), along with transfer signal lines (42) and (43) and a reset signal line (41), to read out signals realizes the simplification of the wiring in the pixel, the reduction of the pixel size, and so on.
    Type: Grant
    Filed: January 11, 2010
    Date of Patent: July 9, 2013
    Assignee: Sony Corporation
    Inventors: Takashi Abe, Nobuo Nakamura, Tomoyuki Umeda, Keiji Mabuchi, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
  • Patent number: 8413355
    Abstract: P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: April 9, 2013
    Assignee: Sony Corporation
    Inventors: Hiroaki Fujita, Ryoji Suzuki, Nobuo Nakamura, Yasushi Maruyama
  • Patent number: 8362486
    Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
    Type: Grant
    Filed: July 10, 2012
    Date of Patent: January 29, 2013
    Assignee: Sony Corporation
    Inventors: Takashi Abe, Nobuo Nakamura, Keiji Mabuchi, Tomoyuki Umeda, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
  • Publication number: 20120307104
    Abstract: An imaging device including an electronic shutter and a pixel array with color pixels with different characteristics of spectral sensitivity arranged. The pixel array part has at least one clear pixel, the plurality of color pixels including (i) a first color filter pixel having a peak of spectral sensitivity characteristics for red, (ii) a second color filter pixel having a peak for blue, and (iii) a third color filter pixel having a peak for green. The clear pixel has a high transmittance arranged in an oblique pixel array system at a given position of a given row and a given column with respect to the first color filter pixel, the second color filter pixel, and the third color filter pixel. An electronic shutter is separately driven for the at least one clear pixel and for the plurality of color filter pixels.
    Type: Application
    Filed: June 14, 2012
    Publication date: December 6, 2012
    Applicant: SONY CORPORATION
    Inventors: Junichi Kanai, Nobuo Nakamura
  • Publication number: 20120286388
    Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
    Type: Application
    Filed: July 10, 2012
    Publication date: November 15, 2012
    Applicant: Sony Corporation
    Inventors: Takashi Abe, Nobuo Nakamura, Keiji Mabuchi, Tomoyuki Umeda, Hiroaki Fujita, Eiichi Funatsu, Hiroki Sato
  • Patent number: 8264580
    Abstract: A solid-state imaging device is disclosed. The device includes: a pixel array unit in which unit pixels including photoelectric conversion elements are two-dimensionally arranged and a first signal and a second signal are outputted to a signal line as a pixel signal; a signal processing unit including a variable gain amplifier, and an analog/digital converter; a signal supply unit supplying a reference signal; plural memory units holds the reference signal passed through the signal processing unit so as to correspond to the plural gains respectively when the variable gain amplifier is set at the plural gains respectively; and a correction unit subtracting the reference signal held in the plural memory units from the pixel signal outputted from each unit pixel in an active pixel area of the pixel array unit and passed through the signal processing unit when the variable gain amplifier is set at the plural gains respectively.
    Type: Grant
    Filed: March 20, 2008
    Date of Patent: September 11, 2012
    Assignee: Sony Corporation
    Inventors: Tomonori Mori, Nobuo Nakamura
  • Patent number: 8227737
    Abstract: An imaging device including: an electronic shutter and a pixel array part. The pixel array part has a plurality of pixels with different characteristics of spectral sensitivity arranged in an array and which converts light transmitted through the pixel into an electric signal. The pixel array part has a plurality of color pixels and at least one clear pixel, the plurality of color pixels including (i) a first color filter pixel having a peak of spectral sensitivity characteristics in red, (ii) a second color filter pixel having a peak in blue, and (iii) a third color filter pixel having a peak in green.
    Type: Grant
    Filed: February 10, 2010
    Date of Patent: July 24, 2012
    Assignee: Sony Corporation
    Inventors: Junichi Kanai, Nobuo Nakamura
  • Publication number: 20120153130
    Abstract: An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.
    Type: Application
    Filed: February 27, 2012
    Publication date: June 21, 2012
    Applicant: SONY CORPORATION
    Inventors: Nobuo NAKAMURA, Shoji KAWAHITO, Hiroki SATO, Mizuho HIGASHI
  • Patent number: 8199964
    Abstract: A loudspeaker of high sound quality is achieved by improving rigidity of a material used for a diaphragm, a dust cap and a sub-cone. The diaphragm, the dust cap and the sub-cone of the loudspeaker are made of a paper beaten with the material containing bamboo fibers obtained from a bamboo tree aged one year or older, of which the fibers are finely beaten to an extent of micro-fibrillated form. The diaphragm and the dust cap are also made with a beaten paper containing at least 2 wt % of “A fibers” having stems of no greater than 30 ?m in diameter, and surfaces of the stems are fibrillated into shaggy branches having diameters of 1 ?m or less.
    Type: Grant
    Filed: February 9, 2007
    Date of Patent: June 12, 2012
    Assignee: Panasonic Corporation
    Inventors: Kazuyoshi Mimura, Shinya Mizone, Kenichi Ajiki, Masahide Sumiyama, Toru Fujii, Yoshiyuku Takahashi, Nobuo Nakamura, Toshihiro Shimizu, Hitoshi Satou
  • Publication number: 20120104235
    Abstract: A pre-amplifier (column region unit) of a solid-state imaging device including a pixel-signal controller. The pixel-signal controller, for each vertical signal line, detects the level of each pixel signal independently by a pixel-signal detector on the output side of a pixel-signal amplifier, and sets a gain independently to the pixel-signal amplifier according to the level of the signal. At a subsequent stage of the solid-state imaging device, an analog-to-digital (A/D) converter and a signal extending unit are provided. The A/D converter digitizes a pixel signal, and the digitized pixel signal is corrected by a gain set to the pixel-signal amplifier with reference to a classification signal from the pixel-signal detector, so that the dynamic range of signals of one screen is extended.
    Type: Application
    Filed: January 5, 2012
    Publication date: May 3, 2012
    Applicant: SONY CORPORATION
    Inventors: Hirofumi Sumi, Nobuo Nakamura, Shoji Kawahito
  • Publication number: 20120057042
    Abstract: Solid-state image pickup device and processing method, with A/D conversion on pixel signals read from a pixel array part that effectively achieves reductions in power consumption, size and price while retaining a high-quality image output. The device includes a pixel array part, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read via a signal line is subjected to noise elimination processing in the CDS circuit, and is then inputted into the A/D converter. The A/D converter includes a ?? modulator and a digital filter to perform highly accurate A/D conversion. The A/D converter can also be provided at the front stage of the CDS circuit.
    Type: Application
    Filed: October 17, 2011
    Publication date: March 8, 2012
    Applicant: Sony Corporation
    Inventors: Hiroki Sato, Keiji Mabuchi, Nobuo Nakamura, Tetsuya Iizuka
  • Patent number: 8125551
    Abstract: An image sensor controls the gain of a pixel signal on a pixel-by-pixel basis and extends a dynamic range while maintaining a S/N ratio at a favorable level. A column unit in an image sensor is independently detects a level of each pixel signal and independently sets a gain for level of the signal. A photoelectric converting region unit has pixels arranged two-dimensionally with a vertical signal line for each pixel column to output each pixel signal. The column unit is on an output side of the vertical signal line. The column unit for each pixel column has a pixel signal level detecting circuit, a programmable gain control, a sample and hold (S/H) circuit. Gain correction is performed according to a result of a detected level of the pixel signal.
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: February 28, 2012
    Assignee: Sony Corporation
    Inventors: Nobuo Nakamura, Shoji Kawahito, Hiroki Sato, Mizuho Higashi
  • Patent number: 8053491
    Abstract: An object of the invention is to provide a resin composition which is particularly excellent in impact resistance, tensile elongation characteristics, heat resistance, surface properties, moldability and the like accompanied by less time dependent alteration of these properties and which is produced by mixing a certain plasticizer with a biodegradable polymer of plant origin, and to provide a molded product of the composition. The present invention can provide a resin composition comprising a biodegradable 3-hydroxyalkanoate copolymer (A) and a plasticizer (B), wherein: the biodegradable 3-hydroxyalkanoate copolymer (A) has a recurring unit represented by the structure formula (1): [—CHR—CH2—CO—O—] (wherein, R represents an alkyl group represented by CnH2n+1; and n is an integer of 1 to 15); the plasticizer (B) is based upon a polyglycerol acetic acid ester having an acetylation degree of no less than 50% ester.
    Type: Grant
    Filed: August 9, 2007
    Date of Patent: November 8, 2011
    Assignee: Kaneka Corporation
    Inventors: Taizo Aoyama, Nobuo Nakamura, Yoshihiko Hashimoto, Noriyuki Suzuki