Patents by Inventor Nobuo Yamaguchi
Nobuo Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11956504Abstract: Provided is a content distribution server which is able to establish restrictions on the public disclosure of an object displayed in virtual space at the convenience of the distributor. The content distribution server comprises: a distribution unit that distributes live content for synthesizing video in virtual space using information from the distributor as virtual character information; and a first setting receiving unit that receives from the distributor terminal used by the distributor public disclosure restriction settings for establishing restrictions on objects present in virtual space displayed on the distributor terminal that can be viewed on a viewer terminal used by a viewer to view live content.Type: GrantFiled: July 8, 2022Date of Patent: April 9, 2024Assignee: DWANGO CO., LTD.Inventors: Nobuo Kawakami, Kentarou Matsui, Shinnosuke Iwaki, Takashi Kojima, Naoki Yamaguchi
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Patent number: 10378100Abstract: Disclosed is a sputtering apparatus having a target (2) disposed offset with respect to a substrate (7), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less.Type: GrantFiled: December 18, 2014Date of Patent: August 13, 2019Assignee: CANON ANELVA CORPORATIONInventors: Nobuo Yamaguchi, Koji Tsunekawa, Naoki Watanabe, Motomu Kosuda
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Patent number: 9905401Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.Type: GrantFiled: April 1, 2015Date of Patent: February 27, 2018Assignee: CANON ANELVA CORPORATIONInventors: Nobuo Yamaguchi, Kazuaki Matsuo, Susumu Akiyama, Satoshi Uchino, Yoshimitsu Shimane
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Patent number: 9779921Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.Type: GrantFiled: June 25, 2015Date of Patent: October 3, 2017Assignee: CANON ANELVA CORPORATIONInventors: Yoshimitsu Shimane, Satoshi Uchino, Susumu Akiyama, Kazuaki Matsuo, Nobuo Yamaguchi
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Patent number: 9593412Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.Type: GrantFiled: November 1, 2013Date of Patent: March 14, 2017Assignee: Canon Anelva CorporationInventors: Nobuo Yamaguchi, Kimiko Mashimo, Shinya Nagasawa
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Patent number: 9472384Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.Type: GrantFiled: June 29, 2015Date of Patent: October 18, 2016Assignee: Canon Anelva CorporationInventors: Nobuo Yamaguchi, Kazuaki Matsuo
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Patent number: 9322092Abstract: It is an object of this invention to prevent a deposited film from adhering to an exhaust chamber so as to suppress the generation of particles. A sputtering apparatus (1) includes a shutter accommodation unit (23) which is detachably placed in an exhaust chamber (8) and accommodates a shutter (19) in a retracted state, and shield members (40a, 40b) which at least partially cover the exhaust port of the exhaust chamber (8), and are at least partially formed around an opening portion of the shutter accommodation unit (23).Type: GrantFiled: September 7, 2012Date of Patent: April 26, 2016Assignee: CANON ANELVA CORPORATIONInventors: Nobuo Yamaguchi, Kimiko Mashimo, Shinya Nagasawa
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Publication number: 20150364301Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.Type: ApplicationFiled: June 29, 2015Publication date: December 17, 2015Inventors: Nobuo Yamaguchi, Kazuaki Matsuo
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Publication number: 20150294845Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.Type: ApplicationFiled: June 25, 2015Publication date: October 15, 2015Applicant: CANON ANELVA CORPORATIONInventors: Yoshimitsu SHIMANE, Satoshi UCHINO, Susumu AKIYAMA, Kazuaki MATSUO, Nobuo YAMAGUCHI
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Patent number: 9090974Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.Type: GrantFiled: August 28, 2012Date of Patent: July 28, 2015Assignee: Canon Anelva CorporationInventors: Nobuo Yamaguchi, Kazuaki Matsuo
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Publication number: 20150206714Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.Type: ApplicationFiled: April 1, 2015Publication date: July 23, 2015Inventors: NOBUO YAMAGUCHI, KAZUAKI MATSUO, SUSUMU AKIYAMA, SATOSHI UCHINO, YOSHIMITSU SHIMANE
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Patent number: 9082803Abstract: A mask alignment method for a substrate holding apparatus. A first engaging portion is formed in one of a substrate holder and a mask and has two protruding portions. A second engaging portion is formed in the other one of the substrate holder and the mask and has at least one protruding portion. First groove portions formed in the other one of the substrate holder and the mask engage with the protruding portions of the first engaging portion. A second groove portion formed in the other one of the substrate holder and the mask engages with the protruding portion of the second engaging portion.Type: GrantFiled: August 5, 2010Date of Patent: July 14, 2015Assignee: CANON ANELVA CORPORATIONInventors: Yoshimitu Shimane, Nobuo Yamaguchi
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Patent number: 9034152Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.Type: GrantFiled: December 2, 2011Date of Patent: May 19, 2015Assignee: CANON ANELVA CORPORATIONInventors: Nobuo Yamaguchi, Kazuaki Matsuo, Susumu Akiyama, Satoshi Uchino, Yoshimitsu Shimane
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Publication number: 20150101927Abstract: Disclosed is a sputtering apparatus having a target (2) disposed offset with respect to a substrate (7), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less.Type: ApplicationFiled: December 18, 2014Publication date: April 16, 2015Inventors: Nobuo YAMAGUCHI, Koji TSUNEKAWA, Naoki WATANABE, Motomu KOSUDA
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Patent number: 8992743Abstract: This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.Type: GrantFiled: May 30, 2012Date of Patent: March 31, 2015Assignee: Canon Anelva CorporationInventors: Nobuo Yamaguchi, Kazuaki Matsuo
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Patent number: 8669624Abstract: Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer.Type: GrantFiled: July 26, 2012Date of Patent: March 11, 2014Assignee: Canon Anelva CorporationInventors: Naomu Kitano, Takashi Minami, Nobuo Yamaguchi, Takuya Seino, Takashi Nakagawa, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi
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Patent number: 8663437Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.Type: GrantFiled: May 18, 2010Date of Patent: March 4, 2014Assignee: Canon Anelva CorporationInventors: Nobuo Yamaguchi, Kimiko Mashimo, Shinya Nagasawa
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Publication number: 20140054164Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.Type: ApplicationFiled: November 1, 2013Publication date: February 27, 2014Applicant: CANON ANELVA CORPORATIONInventors: Nobuo Yamaguchi, Kimiko Mashimo, Shinya Nagasawa
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Publication number: 20130285158Abstract: Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer.Type: ApplicationFiled: July 26, 2012Publication date: October 31, 2013Applicant: CANON ANELVA CORPORATIONInventors: Naomu Kitano, Takashi Minami, Nobuo Yamaguchi, Takuya Seino, Takashi Nakagawa, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi
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Publication number: 20130048489Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.Type: ApplicationFiled: August 28, 2012Publication date: February 28, 2013Applicant: CANON ANELVA CORPORATIONInventors: Nobuo YAMAGUCHI, Kazuaki MATSUO