Patents by Inventor Nobuo Yamaguchi

Nobuo Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10378100
    Abstract: Disclosed is a sputtering apparatus having a target (2) disposed offset with respect to a substrate (7), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: August 13, 2019
    Assignee: CANON ANELVA CORPORATION
    Inventors: Nobuo Yamaguchi, Koji Tsunekawa, Naoki Watanabe, Motomu Kosuda
  • Patent number: 9905401
    Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: February 27, 2018
    Assignee: CANON ANELVA CORPORATION
    Inventors: Nobuo Yamaguchi, Kazuaki Matsuo, Susumu Akiyama, Satoshi Uchino, Yoshimitsu Shimane
  • Patent number: 9779921
    Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: October 3, 2017
    Assignee: CANON ANELVA CORPORATION
    Inventors: Yoshimitsu Shimane, Satoshi Uchino, Susumu Akiyama, Kazuaki Matsuo, Nobuo Yamaguchi
  • Patent number: 9593412
    Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.
    Type: Grant
    Filed: November 1, 2013
    Date of Patent: March 14, 2017
    Assignee: Canon Anelva Corporation
    Inventors: Nobuo Yamaguchi, Kimiko Mashimo, Shinya Nagasawa
  • Patent number: 9472384
    Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: October 18, 2016
    Assignee: Canon Anelva Corporation
    Inventors: Nobuo Yamaguchi, Kazuaki Matsuo
  • Patent number: 9322092
    Abstract: It is an object of this invention to prevent a deposited film from adhering to an exhaust chamber so as to suppress the generation of particles. A sputtering apparatus (1) includes a shutter accommodation unit (23) which is detachably placed in an exhaust chamber (8) and accommodates a shutter (19) in a retracted state, and shield members (40a, 40b) which at least partially cover the exhaust port of the exhaust chamber (8), and are at least partially formed around an opening portion of the shutter accommodation unit (23).
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: April 26, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventors: Nobuo Yamaguchi, Kimiko Mashimo, Shinya Nagasawa
  • Publication number: 20150364301
    Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.
    Type: Application
    Filed: June 29, 2015
    Publication date: December 17, 2015
    Inventors: Nobuo Yamaguchi, Kazuaki Matsuo
  • Publication number: 20150294845
    Abstract: An apparatus includes a process chamber, a substrate holder arranged in the process chamber, a first shield provided on the peripheral portion of the substrate holder, and a second shield provided inside the process chamber. The internal space of the process chamber is partitioned into an outer space and a process space to process the substrate, by at least the first shield, the second shield, and the substrate holder. The substrate holder can be driven along a driving direction perpendicular to a substrate holding surface. The length, in a direction parallel to the driving direction, of a minimum gap portion having a minimum size in a direction perpendicular to the driving direction between the first and second shields does not change even if the substrate holder is driven in the driving direction.
    Type: Application
    Filed: June 25, 2015
    Publication date: October 15, 2015
    Applicant: CANON ANELVA CORPORATION
    Inventors: Yoshimitsu SHIMANE, Satoshi UCHINO, Susumu AKIYAMA, Kazuaki MATSUO, Nobuo YAMAGUCHI
  • Patent number: 9090974
    Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: July 28, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Nobuo Yamaguchi, Kazuaki Matsuo
  • Publication number: 20150206714
    Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
    Type: Application
    Filed: April 1, 2015
    Publication date: July 23, 2015
    Inventors: NOBUO YAMAGUCHI, KAZUAKI MATSUO, SUSUMU AKIYAMA, SATOSHI UCHINO, YOSHIMITSU SHIMANE
  • Patent number: 9082803
    Abstract: A mask alignment method for a substrate holding apparatus. A first engaging portion is formed in one of a substrate holder and a mask and has two protruding portions. A second engaging portion is formed in the other one of the substrate holder and the mask and has at least one protruding portion. First groove portions formed in the other one of the substrate holder and the mask engage with the protruding portions of the first engaging portion. A second groove portion formed in the other one of the substrate holder and the mask engages with the protruding portion of the second engaging portion.
    Type: Grant
    Filed: August 5, 2010
    Date of Patent: July 14, 2015
    Assignee: CANON ANELVA CORPORATION
    Inventors: Yoshimitu Shimane, Nobuo Yamaguchi
  • Patent number: 9034152
    Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: May 19, 2015
    Assignee: CANON ANELVA CORPORATION
    Inventors: Nobuo Yamaguchi, Kazuaki Matsuo, Susumu Akiyama, Satoshi Uchino, Yoshimitsu Shimane
  • Publication number: 20150101927
    Abstract: Disclosed is a sputtering apparatus having a target (2) disposed offset with respect to a substrate (7), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less.
    Type: Application
    Filed: December 18, 2014
    Publication date: April 16, 2015
    Inventors: Nobuo YAMAGUCHI, Koji TSUNEKAWA, Naoki WATANABE, Motomu KOSUDA
  • Patent number: 8992743
    Abstract: This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.
    Type: Grant
    Filed: May 30, 2012
    Date of Patent: March 31, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Nobuo Yamaguchi, Kazuaki Matsuo
  • Patent number: 8669624
    Abstract: Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: March 11, 2014
    Assignee: Canon Anelva Corporation
    Inventors: Naomu Kitano, Takashi Minami, Nobuo Yamaguchi, Takuya Seino, Takashi Nakagawa, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi
  • Patent number: 8663437
    Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: March 4, 2014
    Assignee: Canon Anelva Corporation
    Inventors: Nobuo Yamaguchi, Kimiko Mashimo, Shinya Nagasawa
  • Publication number: 20140054164
    Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.
    Type: Application
    Filed: November 1, 2013
    Publication date: February 27, 2014
    Applicant: CANON ANELVA CORPORATION
    Inventors: Nobuo Yamaguchi, Kimiko Mashimo, Shinya Nagasawa
  • Publication number: 20130285158
    Abstract: Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer.
    Type: Application
    Filed: July 26, 2012
    Publication date: October 31, 2013
    Applicant: CANON ANELVA CORPORATION
    Inventors: Naomu Kitano, Takashi Minami, Nobuo Yamaguchi, Takuya Seino, Takashi Nakagawa, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi
  • Publication number: 20130048489
    Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.
    Type: Application
    Filed: August 28, 2012
    Publication date: February 28, 2013
    Applicant: CANON ANELVA CORPORATION
    Inventors: Nobuo YAMAGUCHI, Kazuaki MATSUO
  • Publication number: 20120325651
    Abstract: It is an object of this invention to prevent a deposited film from adhering to an exhaust chamber so as to suppress the generation of particles. A sputtering apparatus (1) includes a shutter accommodation unit (23) which is detachably placed in an exhaust chamber (8) and accommodates a shutter (19) in a retracted state, and shield members (40a, 40b) which at least partially cover the exhaust port of the exhaust chamber (8), and are at least partially formed around an opening portion of the shutter accommodation unit (23).
    Type: Application
    Filed: September 7, 2012
    Publication date: December 27, 2012
    Applicant: CANON ANELVA CORPORATION
    Inventors: Nobuo YAMAGUCHI, Kimiko MASHIMO, Shinya NAGASAWA