Patents by Inventor Noburu Shimizu
Noburu Shimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10207390Abstract: A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.Type: GrantFiled: September 4, 2013Date of Patent: February 19, 2019Assignee: TOSHIBA MEMORY CORPORATIONInventors: Noburu Shimizu, Shinro Ohta, Koji Maruyama, Yoichi Kobayashi, Ryuichiro Mitani, Shunsuke Nakai, Atsushi Shigeta
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Publication number: 20140004773Abstract: A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.Type: ApplicationFiled: September 4, 2013Publication date: January 2, 2014Applicants: KABUSHIKI KAISHA TOSHIBA, EBARA CORPORATIONInventors: Noburu SHIMIZU, Shinro OHTA, Koji MARUYAMA, Yoichi KOBAYASHI, Ryuichiro MITANI, Shunsuke NAKAI, Atsushi SHIGETA
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Patent number: 8554356Abstract: A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.Type: GrantFiled: October 5, 2007Date of Patent: October 8, 2013Assignees: Ebara Corporation, Kabushiki Kaisha ToshibaInventors: Noburu Shimizu, Shinro Ohta, Koji Maruyama, Yoichi Kobayashi, Ryuichiro Mitani, Shunsuke Nakai, Atsushi Shigeta
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Patent number: 8398811Abstract: A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.Type: GrantFiled: August 24, 2011Date of Patent: March 19, 2013Assignee: Ebara CorporationInventors: Tatsuya Sasaki, Naoshi Yamada, Yoshifumi Katsumata, Noburu Shimizu, Seiryo Tsuno, Takashi Mitsuya
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Patent number: 8388408Abstract: A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time.Type: GrantFiled: August 14, 2009Date of Patent: March 5, 2013Assignee: Ebara CorporationInventors: Yoichi Kobayashi, Noburu Shimizu, Shinrou Ohta
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Patent number: 8157616Abstract: A method for detecting an end point of a polishing operation (e.g., a polishing stop point or a changing point of polishing conditions) of a film of a substrate is described. The method includes applying light to a surface of a substrate during polishing of the substrate; receiving reflected light from the surface of the substrate, monitoring a first characteristic value and a second characteristic value calculated from reflection intensities at different wavelengths; detecting a point when an extremal point of the first characteristic value and an extremal point of the second characteristic value appear within a predetermined time difference; after detecting the point, detecting a predetermined extremal point of the first characteristic value or the second characteristic value; and determining a polishing end point based on a point when the predetermined extremal point is detected.Type: GrantFiled: June 2, 2009Date of Patent: April 17, 2012Assignee: Ebara CorporationInventors: Noburu Shimizu, Shinrou Ohta
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Publication number: 20110306274Abstract: A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.Type: ApplicationFiled: August 24, 2011Publication date: December 15, 2011Inventors: Tatsuya SASAKI, Naoshi Yamada, Yoshifumi Katsumata, Noburu Shimizu, Seiryo Tsuno, Takashi Mitsuya
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Patent number: 8025759Abstract: A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.Type: GrantFiled: July 1, 2004Date of Patent: September 27, 2011Assignee: Ebara CorporationInventors: Tatsuya Sasaki, Naoshi Yamada, Yoshifumi Katsumata, Noburu Shimizu, Seiryo Tsuno, Takashi Mitsuya
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Patent number: 7960188Abstract: A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film. During the second polishing process and the third polishing process, a polishing state of the substrate is monitored with an eddy current sensor, and the third polishing process is terminated when an output signal of the eddy current sensor reaches a predetermined threshold.Type: GrantFiled: May 13, 2009Date of Patent: June 14, 2011Assignee: Ebara CorporationInventors: Shinrou Ohta, Mitsuo Tada, Noburu Shimizu, Yoichi Kobayashi, Taro Takahashi, Eisaku Hayashi, Hiromitsu Watanabe, Tatsuya Kohama, Itsuki Kobata
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Patent number: 7780503Abstract: A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.Type: GrantFiled: November 19, 2008Date of Patent: August 24, 2010Assignee: Ebara CorporationInventors: Shinrou Ohta, Noburu Shimizu, Yoichi Kobayashi
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Publication number: 20100093260Abstract: A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time.Type: ApplicationFiled: August 14, 2009Publication date: April 15, 2010Inventors: Yoichi Kobayashi, Noburu Shimizu, Shinrou Ohta, Toshifumi Kimba, Masaki Kinoshita
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Publication number: 20100015889Abstract: The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate.Type: ApplicationFiled: October 5, 2007Publication date: January 21, 2010Inventors: Noburu Shimizu, Shinro Ohta, Koji Maruyama, Yoichi Kobayashi, Ryuichiro Mitani, Shunsuke Nakai, Atsushi Shigeta
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Publication number: 20090298387Abstract: A method for detecting an end point of a polishing operation (e.g., a polishing stop point or a changing point of polishing conditions) of a film of a substrate is described. The method includes applying light to a surface of a substrate during polishing of the substrate; receiving reflected light from the surface of the substrate, monitoring a first characteristic value and a second characteristic value calculated from reflection intensities at different wavelengths; detecting a point when an extremal point of the first characteristic value and an extremal point of the second characteristic value appear within a predetermined time difference; after detecting the point, detecting a predetermined extremal point of the first characteristic value or the second characteristic value; and determining a polishing end point based on a point when the predetermined extremal point is detected.Type: ApplicationFiled: June 2, 2009Publication date: December 3, 2009Inventors: Noburu SHIMIZU, Shinrou Ohta
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Publication number: 20090286332Abstract: A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film, during the second polishing process and the third polishing process, monitoring a polishing state of the substrate with an eddy current sensor, and terminating the third polishing process when an output signal of the eddy current sensor reaches a predetermined threshold.Type: ApplicationFiled: May 13, 2009Publication date: November 19, 2009Inventors: Shinrou OHTA, Mitsuo Tada, Noburu Shimizu, Yoichi Kobayashi, Taro Takahashi, Eisaku Hayashi, Hiromitsu Watanabe, Tatsuya Kohama, Itsuki Kobata
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Publication number: 20090130956Abstract: A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.Type: ApplicationFiled: November 19, 2008Publication date: May 21, 2009Inventors: Shinrou Ohta, Noburu Shimizu, Yoichi Kobayashi
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Publication number: 20070243797Abstract: A polishing method for polishing a workpiece using the chemical polishing process endpoint detecting technology is applicable to actual polishing processes and polishing apparatus. The polishing method including pressing the workpiece against a polishing surface of a polishing table, moving the workpiece and the polishing surface relatively to each other to polish the workpiece, and disposing a gas suction pipe having a gas inlet port, directly above the polishing surface, supplying an atmospheric gas from above the polishing surface through the gas inlet port to a gas detector via the gas suction pipe, and monitoring a particular gas contained in the atmospheric gas with the gas detector while the workpiece is being polished.Type: ApplicationFiled: April 16, 2007Publication date: October 18, 2007Inventors: Akira Fukunaga, Noburu Shimizu, Shintaro Kamioka, Manabu Tsujimura
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Publication number: 20060166503Abstract: A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.Type: ApplicationFiled: July 1, 2004Publication date: July 27, 2006Inventors: Tatsuya Sasaki, Naoshi Yamada, Yoshifumi Katsumata, Noburu Shimizu, Seiryo Tsuno, Takashi Mitsuya
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Patent number: 7011569Abstract: A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.Type: GrantFiled: April 30, 2002Date of Patent: March 14, 2006Assignee: Ebara CorporationInventors: Noburu Shimizu, Norio Kimura
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Publication number: 20050090188Abstract: A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.Type: ApplicationFiled: November 12, 2004Publication date: April 28, 2005Inventors: Noburu Shimizu, Norio Kimura
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Patent number: 6595831Abstract: A polishing method and apparatus can concurrently establish a stable removal rate, a small step height reduction rate, and reduction of detects on the polished surface for various kinds of polished subjects, while providing less environmental problems and requiring less processing costs. The method for polishing a surface of a semiconductor device wafer comprises first polishing a surface of the semiconductor wafer by a first fixed abrasive polishing method; and finish polishing the polished surface of the semiconductor wafer by a second fixed abrasive polishing method different from the first fixed abrasive polishing method.Type: GrantFiled: April 28, 2000Date of Patent: July 22, 2003Assignee: Ebara CorporationInventors: Kazuto Hirokawa, Hirokuni Hiyama, Yutaka Wada, Hisanori Matsuo, Noburu Shimizu