Abstract: A method of forming a porous film on a processing target includes: forming fine organic particles by polymerizing an organic compound in a gaseous phase; mixing the fine organic particles with a silicon compound containing a Si—O bond in a gaseous phase, thereby depositing a film containing the fine particles on the processing target; and removing the fine organic particles from the film.

Abstract: A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si—O bond in its molecule in a gaseous phase into a reaction chamber; forming a siloxane oligomer through plasma reaction of the silicon compound; and supplying an organic amine in a gaseous phase into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a porous film on the semiconductor substrate.

Abstract: A copolymerized high polymer film includes plural organic polymers, as skeleton, and is manufactured by blowing more than two kinds of organic monomers of respectively specific structures, in a vapor phase condition, onto the surface of a heated substrate, through plasma being generated in a reaction chamber. As a result, manufacture of an organic high polymer film capable of further reducing the effective relative permittivity of organic polymer films as a whole can be achieved, and, at the same time, further improvement in mechanical strength of film as well as film forming speed can be achieved.

Abstract: A copolymer film having a decreased dielectric constant which is produced by supplying at least two organic monomers as raw materials, forming a film of a copolymer comprising a backbone based on said at least two monomers on a surface of a substrate, and heating the copolymer film at a temperature higher than a temperature at which the copolymer film is formed.

Abstract: A method of forming a porous film on a semiconductor substrate includes: supplying a silicon compound containing at least one Si—O bond in its molecule in a gaseous phase into a reaction chamber; forming a siloxane oligomer through plasma reaction of the silicon compound; and supplying an organic amine in a gaseous phase into the reaction chamber and reacting the organic amine with the siloxane oligomer, thereby forming a porous film on the semiconductor substrate.

Abstract: A method of forming a porous film on a processing target includes: forming fine organic particles by polymerizing an organic compound in a gaseous phase; mixing the fine organic particles with a silicon compound containing a Si—O bond in a gaseous phase, thereby depositing a film containing the fine particles on the processing target; and removing the fine organic particles from the film.

Abstract: A polymer film having a low dielectric constant is produced polymerizing a raw material gas containing a compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents a divalent aliphatic hydrocarbon group, m is 1 or 2, n is 0 or 1, and R1 and R2 represent independently each other an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group or an aryloxy group by a plasma polymerization method.

Abstract: A compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents a divalent aliphatic hydrocarbon group, m is 1 or 2, n is 0 or 1, and R1 and R2 represent independently each other an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group or an aryloxy group.

Abstract: A copolymer film having a decreased dielectric constant which is produced by supplying at least two organic monomers as raw materials, forming a film of a copolymer comprising a backbone based on said at least two monomers on a surface of a substrate, and heating the copolymer film at a temperature higher than a temperature at which the copolymer film is formed.

Abstract: A polymer film having a low dielectric constant is produced polymerizing a raw material gas containing a compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents a divalent aliphatic hydrocarbon group, m is 1 or 2, n is 0 or 1, and R1 and R2 represent independently each other an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group or an aryloxy group by a plasma polymerization method.

Abstract: A compound of the formula (1): wherein PCA represents a polycycloaliphatic hydrocarbon group, ALK represents a divalent aliphatic hydrocarbon group, m is 1 or 2, n is 0 or 1, and R1 and R2 represent independently each other an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group or an aryloxy group.

Abstract: A copolymerized high polymer film includes plural organic polymers, as skeleton, and is manufactured by blowing more than two kinds of organic monomers of respectively specific structures, in a vapor phase condition, onto the surface of a heated substrate, through plasma being generated in a reaction chamber. As a result, manufacture of an organic high polymer film capable of further reducing the effective relative permittivity of organic polymer films as a whole can be achieved, and, at the same time, further improvement in mechanical strength of film as well as film forming speed can be achieved.

Abstract: The present invention provides a coating solution for forming insulating films, the formed film which having low relative dielectric constant and being excellent in evenness, and a resin employed for preparing the solution; and a method for forming insulating films excellent in evenness. The resin is obtained by thermally polymerizing a compound represented by the following formula (1) to have the weight-average molecular weight in a range equal to or more than 1000 and equal to or less than 500000 in terms of polystyrene measured by GPC analysis. The coating solution for forming insulating film comprises at least one of the resin. A method for forming an insulating film comprises steps of coating the coating solution on a substrate and then subjecting to heat treatment.

Abstract: An organic polymer film with high mechanical strength, which is produced by a method comprising the steps of supplying a raw material gas containing an organic compound having at least one carbon-carbon triple bond in a molecule into a reaction chamber under reduced pressure, exciting the raw material gas in plasma generated in the reaction chamber, depositing the excited raw material gas on a surface of a substrate placed in the reaction chamber, and growing an organic polymer film on the surface of the substrate.

Abstract: The object of the present invention is to provide a novel compound which can prepare an insulating film having a low dielectric constant and excellent in the heat resistance. This object is achieved by an adamantane compound represented by the formula (1).

Abstract: An object of the present invention is to provide a coating solution which is capable of forming an insulating film exhibiting a low dielectric constant and superior insulating performance. The object is achieved by a coating solution for forming insulating film comprising at least one selected from the group consisting of a compound represented by the formula (1) and a resin resulting from polymerization of the compound of the formula (1).

Abstract: There is provided a bisazo compound which is useful as a reactive dye for dyeing or printing a fiber material in an orange to scarlet or red color; the bisazo compound being represented by the following formula (1): ##STR1## wherein m and n represents 0 or 1; W represents a divalent connecting group represented by --NH-- or --NHCONH--;D.sup.1 and D.sup.2 represent a group represented by the following formula (2a), (2b), (2c) or (2d) ##STR2## wherein Y represents --CH.dbd.CH.sub.2 or --CH.sub.2 CH.sub.2 L, in which L represents a group eliminatable by the action of an alkali.

Abstract: There is provided a monoazo compound which is useful as a reactive dye for dyeing or printing a fiber material in an orange to scarlet color; and intermediate compounds for producing the compound is provided; the monoazo compound being represented by the following formula (1): ##STR1## wherein m represents 0 or 1; R.sup.1 represents a hydrogen atom or a lower alkyl group; D represents a specific diazo component of benzene type having substitution of a fiber reactive group; B.sup.1 represents a direct bond or connecting group; Z.sup.1 represents an alkylcarbonyl group, phenylcarbonyl group or a fiber-reactive group of vinylsulfone, triazine or pirimidine type; a group represented by --NR.sup.1 -- bonds to 6-position or 7-position of a naphthalene ring;and the intermediate compounds being represented by the following formulae (A) or (B): ##STR2## wherein U represents a connecting group such as alkylene and the like, Y represents vinyl or --CH.sub.2 CH.sub.

Abstract: A bisazo compound represented by the following general formula (I) or its salt is a useful fiber-reactive dye: ##STR1## where D is a phenyl or naphthyl group; B is a phenylene group, etc.; U is an aliphatic or aromatic linking group; Z is a vinyl group, etc.; and X and Y are a halogen atom, a pyridinio group, etc.

Abstract: A monoazo compound useful for dyeing or printing a fiber material represented by the following general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or alkyl; U.sup.1 and U.sup.2 represent a group of the following general formula (U1), (U2) or (U3): ##STR2## wherein Y.sup.1, Y.sup.2 and Y.sup.3 represent --CH.dbd.CH.sub.2 or --CH.sub.2 CH.sub.2 Z wherein Z represents a group which can be eliminated by the action of an alkali; and X.sup.1 and X.sup.2 represent halogeno, pyridinio or a group of the following general formula (X1), (X2), (X3) or (X4): ##STR3## or a salt thereof.