Abstract: Embodiments of the present invention are directed to an apparatus and a method for through lens measurement for a projection system. In one embodiment, an apparatus for through lens image measurement comprises a projection lens housing containing lens elements therein, and a reflective member having a center of curvature on a first plane. The reflective member is attached to the lens housing. An optical system includes a light source, a position detector, and one or more optical elements. The optical system is attached to the lens housing and configured to direct a light from the light source through the lens elements to the reflective member which reflects the light back through the lens elements and toward the position detector. The position detector is configured to detect any image shift at the first plane due to misalignment of the lens elements with respect to the lens housing.

Abstract: An exposure apparatus, wherein an exposure of a substrate (P) is carried out by filling at least a portion of the space between a projection optical system and the substrate (P) with a liquid and projecting an image of a pattern onto the substrate (P) via the projection optical system and the liquid, includes a bubble detector (20) which detects air bubble or bubbles in the liquid between the projection optical system and the substrate (P). Consequently, the exposure apparatus is capable of suppressing deterioration of a pattern image caused by bubbles in the liquid when an exposure is carried out while filling the space between the projection optical system and the substrate with the liquid.

Abstract: Liquid is supplied by a supply mechanism to a space between a lens and a wafer via a supply nozzle on one side of the lens, and the liquid is recovered by a recovery mechanism via a recovery pipe on the other side of the lens. When the supply and the recovery of the liquid are performed in parallel, a predetermined amount of liquid (exchanged at all times) is held between the lens and the substrate on the stage. Accordingly, when exposure (pattern transfer on the substrate) is performed in this state, an immersion method is applied and a pattern is transferred with good precision onto the substrate. In addition, in the case the liquid leaks out from under the lower edge of a peripheral wall, the liquid that could not be recovered is recovered by an auxiliary recovery mechanism via a slit. And, by such operations, the substrate is freed from the residual liquid on the substrate.

Abstract: In an exposure apparatus, an exposure of a substrate (P) is carried out by filling at least a portion of the space between a projection optical system (PL) and the substrate (P) with a liquid (50) and projecting the image of a pattern onto the substrate (P) via the projection optical system (PL). An optical element (60) and a barrel (PK), which are in contact with the liquid (50) when the substrate (P) is moved, are surface-treated for adjusting the affinity with the liquid (50). Consequently, generation of bubbles in the liquid between the projection optical system and the substrate is suppressed and the liquid is always retained between the projection optical system and the substrate, thereby creating a good immersion state.

Abstract: An exposure apparatus which performs an exposure while filling a space between a projection optical system and a substrate with liquid, and in which deterioration of a device caused by adherent liquid on the substrate is suppressed is provided. A device manufacturing system (SYS) includes a main body of an exposure apparatus (EX) which fills a space between a projection optical system (PL) and a substrate (P) with a liquid (50) and projects an image of a pattern onto the substrate (P) via the projection optical system (PL) and the liquid (50); an interface section (IF) arranged between the exposure apparatus main body (EX) and a coater/developer main body (C/D) which processes the substrate (P) after exposure; and a liquid-removing unit (100) which removes the liquid (50) adhering to the substrate (P) before the exposed substrate (P) is transferred into the coater/developer main body (C/D) through the interface section (IF).

Abstract: A method of transferring a pattern of a mask onto shot areas on a substrate determines two sets of parameters in a single model equation. The parameters in one of the two sets relate to arrangement of a plurality of shot areas on the substrate, and the parameters in the other set relate to the shot areas per se. The mask and the substrate are moved relatively in accordance with the determined parameters.

Abstract: The projection exposure apparatus is provided with a moving mirror (24X, 24Y) having a length Lm set so as to satisfy a relationship as represented by Lm<Dw+2BL, in which Dw is a diameter of a substrate stage (18) and BL is the distance between a projection center of an optical projection system (PL) and a detection center of a mark detection system (AS). The projection exposure apparatus having the moving mirror so set for its length Lm as to satisfy the above relationship can make the substrate stage (18) more compact in size and lighter in weight, thereby achieving improvements in performance of controlling the position of the substrate stage (18), as compared with a conventional exposure apparatus having a moving mirror set so as for its length to meet a relationship as represented by Lm>Dw+2BL.

Abstract: A photomask producing method according to the present invention segments a parent pattern which is an &agr;-magnification of an original pattern which is a &bgr;-magnification of a circuit pattern into &agr; lengthwise and breadthwise, thereby forming parent patterns on data. The parent patterns are written on a substrate at equal magnification by using an electron beam lithography system, thereby producing master reticles. Reduced images of the parent patterns of the master reticles are transferred on a substrate while performing screen linking, thereby producing working reticle. This photomask producing method can form an original pattern with a high precision and in a short period of time.

Abstract: In an interferometer for detecting interference light between light flux passed through an object to be inspected and reference light to be generated from a portion of the light flux passed therethrough, a phase of the interference light is detected with high precision. The light flux passed through the optical system to be inspected forms a spot image on a pinhole formed in a plate. Measuring light from the spot image and the reference-light diffracted out of the light flux from the spot image at the pinhole create interference light which in turn is received by an observation system. An image of interference fringes formed by the interference light is taken with an image pickup element. Further, heterodyne interference light is created by vibrating the plate in the direction intersecting the light flux or in the direction along the light path of the light flux, thereby detecting a phase of each portion of the interference fringes with high precision.

Abstract: A method of aligning each of a plurality of processing areas arranged on a substrate with a predetermined transfer position in a static coordinate system XY for defining a moving position of said substrate, a pattern of a mask being transferred to each of the plurality of processing areas, the method comprising the steps of: wherein each of the plurality of processing areas has a specific point and a plurality of marks for alignment arranged by a predetermined positional relationship with respect to said specific point; measuring coordinate positions of a predetermined number of marks selected from several processing areas of the plurality of processing areas on the static coordinate system XY; calculating a plurality of parameters in a model equation expressing the regularity of arrangement of the plurality of processing areas by performing a statistic calculation by use with the measured plurality of coordinate positions, arrangement coordinate values upon the design of the specific points of the several pr

Abstract: An exposure method which irradiates a slit-shaped illumination light IL on a reticle Ri and a substrate while moving them synchronously so as to sequentially transfer images of patterns formed on the reticle Ri to the substrate 4, wherein a density filter Fj having an attenuating part for gradually reducing the distribution of illuminance of the illumination light IL is moved in synchronization with the movement of the reticle Ri.

Abstract: A method of obtaining an optimum exposure condition of a step-and-scan exposure apparatus, the step-and-scan exposure apparatus synchronously moving a mask and a substrate relative to an illumination light to transfer a pattern of the mask onto a plurality of shot areas on the substrate, the method comprising the steps of determining an unevenness of an illuminance of the illumination light, adjusting the illumination light to change the illuminance within a predetermined range, inputting a plurality of first exposure conditions into the step-and-scan exposure apparatus, testing the plurality of first exposure condition in a step-and-repeat mode.

Abstract: An adjusting method capable of accurately forming a mark for measuring optical characteristics of an optical system, such as an alignment sensor of an exposure system to be used in manufacturing semiconductor devices or the like and correcting an aberration or the like of the optical system with a high precision. A first mark (DM1) having a recess pattern (31a) with a width a provided at a pitch P in a measuring direction and a second mark (DM2) having a recess pattern (32a) with a width c provided at a pitch P have been formed in the vicinity of each other on a wafer (11) for adjustment, and the duty ratio (=a/P) of the recess pattern (31a) of the first mark and the duty ratio (=c/P) of the recess pattern (32a) of the second mark are different. The distance of the images of the two marks (DM1, DM2) is measured, an error in this measured value with respect to a designed value is determined, and the detecting optical system is adjusted in such a way as to reduce this error.

Abstract: A photomask producing method according to the present invention segments a parent pattern which is an &agr;-magnification of an original pattern which is a &bgr;-magnification of a circuit pattern into &agr; lengthwise and breadthwise, thereby forming parent patterns on data. The parent patterns are written on a substrate at equal magnification by using an electron beam lithography system, thereby producing master reticles. Reduced images of the parent patterns of the master reticles are transferred on a substrate while performing screen linking, thereby producing working reticle. This photomask producing method can form an original pattern with a high precision and in a short period of time.

Abstract: An exposure apparatus having an illumination system which applies an exposure energy beam to a mask on which a pattern for transfer is formed, and a stage system for positioning a substrate to which the pattern of the mask is transferred, is characterized in that: a gas supply apparatus for supplying a gas of a high transmittivity with respect to the exposure energy beam, and having good thermal conductivity, to at least a portion of an optical path of the exposure energy beam, and a gas recovery apparatus for recovering at least a portion of the gas after the gas is supplied to the optical path of the exposure energy beam from the gas supply apparatus, are provided.

Abstract: A mark for position detection formed on a substrate has a first pattern disposed near the center of the mark and having periodicity in a Y-axis direction, and second patterns respectively disposed near both sides of the first pattern in an X-axis direction and each having periodicity in the X-axis direction. The position of the first pattern is detected by aligning the detection center of a detecting optical system, that is, the minimal aberration point of the detecting optical system, with the center of the first pattern. The positions of the second patterns are detected at respective points symmetric with respect to the minimal aberration point, and the detected values for the positions of the second patterns are averaged. An apparatus for detecting the mark for position detection detects the first and second patterns by image processing when the mark is in a stationary state.

Abstract: An exposure method which irradiates a slit-shaped illumination light IL on a reticle Ri and a substrate while moving them synchronously so as to sequentially transfer images of patterns formed on the reticle Ri to the substrate 4, wherein a density filter Fj having an attenuating part for gradually reducing the distribution of illuminance of the illumination light IL is moved in synchronization with the movement of the reticle Ri.

Abstract: A method of aligning each of a plurality of processing areas arranged on a substrate with a predetermined transfer position in a static coordinate system XY for defining a moving position of said substrate, a pattern of a mask being transferred to each of the plurality of processing areas, the method comprising the steps of: wherein each of the plurality of processing areas has a specific point and a plurality of marks for alignment arranged by a predetermined positional relationship with respect to said specific point; measuring coordinate positions of a predetermined number of marks selected from several processing areas of the plurality of processing areas on the static coordinate system XY; calculating a plurality of parameters in a model equation expressing the regularity of arrangement of the plurality of processing areas by performing a statistic calculation by use with the measured plurality of coordinate positions, arrangement coordinate values upon the design of the specific points of the several pr

Abstract: A mask pattern is transferred onto a wafer by exposure with a mask stage and a wafer stage being moved synchronously. In global alignment of the mask and the wafer, the scanning direction in the present (second layer) scanning exposure is made coincident with the scanning direction in the preceding (first layer) scanning exposure. When alignment is made by calculating shot array coordinates in advance, shot array coordinates are calculated for each scanning direction.

Abstract: An exposure apparatus comprising a charged particle beam barrel movable parallel with a wafer for exposing a two-dimensional region (XY-two-dimensional region) of the wafer to a charged particle beam. The exposure can be performed by moving the charged particle beam barrel XY-two-dimensionally even if the wafer holder is fixed. Therefore, the footprint of the exposure apparatus is reduced to ¼ compared to conventional apparatus in which the charged particle beam barrel is fixed and wafer holder is two-dimensionally movable.