Abstract: Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

Abstract: Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.

Abstract: A heating chamber and a film forming chamber are disposed along a substrate conveyance path circle. The heating chamber and the film forming chamber are disposed adjacently to each other. With a substrate conveying apparatus, a plurality of substrates are simultaneously conveyed along the substrate conveyance path circle, with a substrate rotation direction being a moving direction. After heating treatment of infrared radiation apparatuses in the heating chamber is performed for the substrates, mist spraying treatment of thin film forming nozzles in the film forming chamber is performed for the substrates. In this manner, a thin film is formed on each of a front surface and a back surface of the plurality of substrates.