Abstract: A semiconductor device with a semiconductor substrate having a first surface and an opposite-facing second surface, a through electrode electrically connected to the semiconductor element and penetrating the semiconductor substrate from the first surface to the second surface, and a conductor, not electrically connected to the semiconductor element, penetrating the semiconductor substrate from the first surface to the second surface, where the through electrode and the conductor have different shapes in plan view.

Abstract: A semiconductor device includes an isolation portion penetrating a semiconductor substrate from a first surface to a second surface positioned opposite the first surface. The isolation portion includes a first insulating film and a second insulating film. The first insulating film has a slit portion at a side of the first surface and the slit portion is buried with the second insulating film. The semiconductor device further includes an electrode penetrating the semiconductor substrate that is surrounded by the isolation portion.

Abstract: An encrypted-traffic discrimination device includes an input interface, a flow discrimination section, a data accumulation section, a selective data calculation section, a calculation result determination section, and an output interface. The flow discrimination section discriminates the input traffic into separate flows based on at least a transmission origin address and a transmission destination address. The data accumulation section accumulates characteristic amount data of the traffic for each of the separate flows. The selective data calculation section executes an evaluation computation utilizing specific data from the characteristic amount data. The calculation result determination section that, based on a calculated evaluation computation value, executes threshold value determination to determine whether or not the traffic is encrypted, and, if the traffic is determined to be encrypted, which encryption format the traffic is encrypted with.

Abstract: A semiconductor device with a semiconductor substrate having a first surface and an opposite-facing second surface, a through electrode electrically connected to the semiconductor element and penetrating the semiconductor substrate from the first surface to the second surface, and a conductor, not electrically connected to the semiconductor element, penetrating the semiconductor substrate from the first surface to the second surface, where the through electrode and the conductor have different shapes in plan view.

Abstract: A high carbon hot rolled steel sheet and a method for manufacturing the same are provided, wherein excellent cold workability and excellent hardenability are obtained stably. The high carbon hot rolled steel sheet has a composition containing C: 0.20% to 0.48%, Si: 0.1% or less, Mn: 0.5% or less, P: 0.03% or less, S: 0.01% or less, sol. Al: more than 0.10% and 1.0% or less, N: 0.005% or less, B: 0.0005% to 0.0050%, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, and a microstructure composed of ferrite and cementite, wherein the average grain size of the above-described ferrite is 10 to 20 ?m and the spheroidization ratio of the above-described cementite is 90% or more.

Abstract: Provided is a display switching apparatus including an operation unit used to instruct a display unit to switch a display of a display image having a background image, and a control unit that, when instructed to switch the display of the display image via the operation unit, exercises control so that the display of the display image on the display unit is switched to the display image having the background image in a visible state indicating whether the display is switchable.

Abstract: A hot-rolled steel sheet for a generator rim contains a structure containing a ferrite phase with an areal ratio of 95% or more in which precipitates containing Ti and V whose average grain diameter is less than 10 nm are precipitated in crystal grains of the ferrite phase. The ferrite phase has an average crystal grain diameter within the range of 2 ?m or more and less than 10 ?m. The hot-rolled steel sheet for a generator rim has strength with a yield strength YS in a rolling direction of 700 MPa or more and electromagnetic properties with a magnetic flux density B50 of 1.5 T or more and a magnetic flux density B100 of 1.6 T or more.

Abstract: A high-carbon hot rolled steel sheet with excellent hardenability and small in-plane anisotropy, and a method for manufacturing the steel sheet are provided. The steel sheet has a chemical composition including, by mass %, C: 0.20 to 0.48%, Si: not more than 0.1%, Mn: not more than 0.5%, P: not more than 0.03%, S: not more than 0.01%, sol. Al: not more than 0.10%, N: not more than 0.005% and B: 0.0005 to 0.0050%, the balance including Fe and inevitable impurities. The steel sheet includes a microstructure containing ferrite and cementite. The cementite has an average grain size of not more than 1.0 ?m. The steel sheet has an in-plane anisotropy of r value, ?r, of not more than 0.1 in absolute value.

Abstract: In a connecting portion between an interconnection and a first bump which is a part of a through electrode penetrating a semiconductor chip and which penetrates a semiconductor substrate, a protruding portion protruding from the interconnection to the side of the first bump is provided. The protruding portion may be made of an insulating material and may be made of a conductive material.

Abstract: A high carbon hot rolled steel sheet having a chemical composition containing by mass %, C: 0.20% to 0.48%, Si: 0.1% or less, Mn: 0.5% or less, P: 0.03% or less, S: 0.01% or less, Al: 0.1% to 0.6%, Cr: 0.05% to 0.5%, B: 0.0005% to 0.0050%, Ca: 0.0010% to 0.0050%, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, where the average amount of N in a surface layer portion from the surface to the position at a depth of 0.1 mm in thickness direction is 0.1% or more and the average amount of N in the central portion in thickness is 0.01% or less, and a microstructure composed of ferrite and carbides, wherein the average grain size of the ferrite is 10 to 20 and the spheroidization ratio of the carbides is 90% or more.

Abstract: The present invention relates to a network analyzing system that performs analyzing for a network. The network analyzing system includes one or a plurality of data processing modules and a network analysis apparatus, the network analysis apparatus includes a unit for accommodating the data processing modules, a unit for holding data-to-be-analyzed, a unit for storing data processing definition information that defines steps that carry out the processing of the data-to-be-analyzed using the data processing modules, a unit for causing the data processing modules to carry out data processing based on the data processing definition information to obtain a data processing result, and each data processing module includes a unit connecting to the network analysis apparatus, and a unit for carrying out data processing in accordance with a request.

Abstract: The object is to provide a technique for modifying a bacterium belonging to the genus Kocuria through genetic engineering for industrially effectively utilizing the bacterium belonging to the genus Kocuria. The above object can be achieved by providing a cyclic plasmid, which has a replication region comprising the base sequence of a DNA-binding protein-like protein gene, the base sequence of a replicase-like protein gene, and the base sequence represented by SEQ ID NO:45, and is autonomously replicable in bacteria. As an example of the aforesaid plasmid, a plasmid containing a base sequence represented by SEQ ID NO:3 or 4 which originates in Kocuria sp. MBE131 strain (FERM P-21885) can be cited.

Abstract: A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor.

Abstract: A semiconductor device comprises an active region formed in a semiconductor substrate and a gate electrode formed on the active region via a gate insulating film formed on a surface of the active region. A peripheral portion of the gate electrode and a peripheral portion of the active region overlap each other at a position where the active region is not divided by the gate electrode when viewed in plan view, thus forming an overlap region.

Abstract: A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor.

Abstract: A steel sheet having a composition containing C: 0.20% to 0.50%, Si: 1.0% or less, Mn: 2.0% or less, P: 0.03% or less, S: 0.02% or less, sol.Al: 0.08% or less, N: 0.02% or less, and Fe and incidental impurities, and a microstructure composed of ferrite and cementite, wherein each of the average grain size ds of the ferrite in the region from the surface of the steel sheet to the position at one-quarter of the sheet thickness and the average grain size dc of the ferrite in the region from the position at one-quarter of the sheet thickness of the steel sheet to the sheet thickness center is 20 to 40 ?m, 0.80?ds/dc?1.20 is satisfied, the average grain size of the cementite is 1.0 ?m or more, the spheroidizing ratio is 90% or more, and 90% or more of cementite is present inside ferrite grains.

Abstract: A high carbon steel sheet having a chemical composition containing C: 0.20% to 0.50%, Si: 1.0% or less, Mn: 2.0% or less, P: 0.03% or less, S: 0.02% or less, sol. Al: 0.08% or less, N: 0.02% or less, and the remainder composed of Fe and incidental impurities, on a percent by mass basis, and a microstructure composed of ferrite and cementite, wherein the fraction of pro-eutectoid ferrite, among the ferrite, in the whole steel microstructure is 20% or more and less than 50%, the average grain size dc of the cementite in the region from the position at one-quarter of the sheet thickness of the steel sheet to the sheet thickness center is 0.50 to 1.5 ?m, and the average grain size ds of the cementite in the region from the surface of the steel sheet to the position at one-quarter of the sheet thickness satisfies ds/dc?0.8.

Abstract: In a connecting portion between an interconnection and a first bump which is a part of a through electrode penetrating a semiconductor chip and which penetrates a semiconductor substrate, a protruding portion protruding from the interconnection to the side of the first bump is provided. The protruding portion may be made of an insulating material and may be made of a conductive material.

Abstract: In the present display device, LEDs are controlled to be lit up in an alternating manner where BG-LEDs (34) and BR-LEDs (35) are controlled to be lit up alternatingly every half of one frame period, such that only G display elements are used for display in a first subframe where the BG-LEDs (34) are lit up, and only B and R display elements are used for display in a second subframe where the BR-LEDs (35) are lit up. As a result, even in the case where crosstalk occurs (with respect to color filters of a certain color), display elements of colors for which such crosstalk can be inhibited or eliminated are simply used for display so that a reduction in color reproducibility can be inhibited or eliminated.

Abstract: The purpose of the present invention is to provide a nuclease that secretes natural nonpathogenic microorganisms extracellularly, has higher specific activity than conventional nucleases, and is useful in nucleolytic degradation on an industrial scale. This purpose is achieved with an extracellularly secreted nuclease derived from Streptomyces bacteria, the nuclease having specific activity equal to or greater than the specific activity of Benzonase® when supplied to double-stranded DNA for 30 minutes at 37° C. in 20 mM Tris/HCl (pH 8.5) containing 1 mM MgCl2 and 1 mM CaCl2 after purification, using double-stranded DNA, single-stranded DNA, and RNA as substrates.