Abstract: An object of the invention is to control an environment such that both external constraints and human comfort are unconsciously and easily achieved. A behavioral change promoting device according to the invention is connected to a control target device configured to act on an environment of a human, an operation unit configured to receive an operation performed on the control target device by the human, and a sensor configured to acquire a control target measurement value in the environment. The behavioral change promoting device includes: a change speed control unit configured to determine, based on the received operation, a change speed at which the control target measurement value is changed in a non-comfort direction of the human.

Abstract: A sensor data correction system, includes: a standard motion mechanism unit for performing a standard motion of a wearable sensor; a determination unit calculating a relationship between first sensor data that is sensed by a first wearable sensor provided with the standard motion mechanism unit and second sensor data that is sensed by a second wearable sensor provided with the standard motion mechanism unit; and a correction unit correcting the first sensor data or the second sensor data, on the basis of the relationship that is calculated by the determination unit.

Abstract: The present invention comprises: a wearable sensor that is worn by a worker, the wearable sensor having a sensor that receives sensor data from a sensing object, and a transmitter that transmits to a terminal the sensor data received by the sensor; and a computer that determines operation content for the worker on the basis of the sensor data received from the wearable sensor, and outputs the result of the determination to a display unit.

Abstract: A pressure sensor device, a method for manufacturing the pressure sensor device, and a work management system mitigating a degree of a false detection is presented. The pressure sensor device detecting pressure includes a flexible substrate base material having flexibility; a comb-teeth shape electrode having an exposed metal surface formed in a predetermined area on the flexible substrate base material; and a pressure-sensitive material that is provided on the comb-teeth shape electrode, varies in a resistance value depending on an amount of a load, and has a curvature in a static state.

Abstract: To provide a semiconductor device which can be stably operated while achieving a reduction of the power consumption. A semiconductor device includes a CPU, a system controller which designates an operation speed of the CPU, P-type SOTB transistors, and N-type SOTB transistors. The semiconductor device is provided with an SRAM which is connected to the CPU, and a substrate bias circuit which is connected to the system controller and is capable of supplying substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors. Here, when the system controller designates a low speed mode to operate the CPU at a low speed, the substrate bias circuit supplies the substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors.

Abstract: A work detection determination system performs detection determination on a work with high accuracy.

Abstract: To provide a semiconductor device which can be stably operated while achieving a reduction of the power consumption. A semiconductor device includes a CPU, a system controller which designates an operation speed of the CPU, P-type SOTB transistors, and N-type SOTB transistors. The semiconductor device is provided with an SRAM which is connected to the CPU, and a substrate bias circuit which is connected to the system controller and is capable of supplying substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors. Here, when the system controller designates a low speed mode to operate the CPU at a low speed, the substrate bias circuit supplies the substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors.

Abstract: Provided is a digitalization system capable of digitalizing the skills of delicate work. This digitalization system comprises a first sensor mounted on a work tool and which detects a deformation of the work tool when the work tool is pressed against a work target, a second sensor which detects a force applied to the work target or a force applied to the work tool when the work tool is pressed against the work target, and a computer which calculates an angle of a corner formed with the work tool and the work target based on sensor values acquired with the first sensor, and calculates a force applied to the work target when the work tool is pressed against the work target based on sensor values acquired with the second sensor.

Abstract: One preferable aspect of the present invention is a state detecting system which detects a state of a machine device based on a detection signal from a detecting element provided to the machine device, and is the state detecting system which includes a non-normal time rate detecting unit which detects a rate or a value as a non-normal time rate, the rate being a rate of an integration value of a time during which an amplitude of the detection signal exceeds a predetermined normal amplitude within a predetermined time, and the value being physically equivalent to the rate.

Abstract: The present invention comprises: a wearable sensor that is worn by a worker, the wearable sensor having a sensor that receives sensor data from a sensing object, and a transmitter that transmits to a terminal the sensor data received by the sensor; and a computer that determines operation content for the worker on the basis of the sensor data received from the wearable sensor, and outputs the result of the determination to a display unit.

Abstract: A sensor data correction system, includes: a standard motion mechanism unit for performing a standard motion of a wearable sensor; a determination unit calculating a relationship between first sensor data that is sensed by a first wearable sensor provided with the standard motion mechanism unit and second sensor data that is sensed by a second wearable sensor provided with the standard motion mechanism unit; and a correction unit correcting the first sensor data or the second sensor data, on the basis of the relationship that is calculated by the determination unit.

Abstract: An operation motion is accurately determined in an operational information management system. The system includes a motion verification portion that combines and verifies plurality of pieces of sensor information and recognizes a specific body motion, a signal determination portion that determines whether an operation content of an operator is correctly performed based on the body motion recognized by the motion verification portion, and a report portion that reports a determine result of the signal determination portion.

Abstract: For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.

Abstract: One preferable aspect of the present invention is a state detecting system which detects a state of a machine device based on a detection signal from a detecting element provided to the machine device, and is the state detecting system which includes a non-normal time rate detecting unit which detects a rate or a value as a non-normal time rate, the rate being a rate of an integration value of a time during which an amplitude of the detection signal exceeds a predetermined normal amplitude within a predetermined time, and the value being physically equivalent to the rate.

Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

Abstract: To provide a semiconductor device which can be stably operated while achieving a reduction of the power consumption. A semiconductor device includes a CPU, a system controller which designates an operation speed of the CPU, P-type SOTB transistors, and N-type SOTB transistors. The semiconductor device is provided with an SRAM which is connected to the CPU, and a substrate bias circuit which is connected to the system controller and is capable of supplying substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors. Here, when the system controller designates a low speed mode to operate the CPU at a low speed, the substrate bias circuit supplies the substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors.

Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

Abstract: To provide a semiconductor device which can be stably operated while achieving a reduction of the power consumption. A semiconductor device includes a CPU, a system controller which designates an operation speed of the CPU, P-type SOTB transistors, and N-type SOTB transistors. The semiconductor device is provided with an SRAM which is connected to the CPU, and a substrate bias circuit which is connected to the system controller and is capable of supplying substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors. Here, when the system controller designates a low speed mode to operate the CPU at a low speed, the substrate bias circuit supplies the substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors.

Abstract: A manufacturing device inputs design information including three-dimensional structure data, generates a manufacturing process flow, and displays the manufacturing process flow on a screen for a user to check, modify, and confirm the flow based on design information and setting information. A process method includes a first process method of a direct modeling method having an FIB method and a second process method of a semiconductor manufacturing process method which is a non-FIB method. The manufacturing device generates a plurality of manufacturing process flows by a combination of cases where each of the process methods is applied to each of the regions of the three-dimensional data. The manufacturing process flow includes a process device, the process method, a control parameter value, a process time, and a total process time for each of process steps. An output unit outputs a manufacturing process flow having, for example, the shortest total process time.

Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.