Abstract: A bonded body includes a copper member and an aluminum alloy member, the copper member and the aluminum alloy member being bonded to each other, in which, in the aluminum alloy member, a Si concentration is in a range of 1.5 mass % or more and 12.5 mass % or less, an Fe concentration is 0.15 mass % or less, a Cu concentration is 0.05 mass % or less, the aluminum alloy member and the copper member are bonded to each other by solid phase diffusion bonding, and a ratio t2/t1 of a thickness t2 of a second intermetallic compound layer that is positioned on the copper member side and is made of a non-? phase other than the ? phase to a thickness t1 of a first intermetallic compound layer that is positioned on the aluminum alloy member side and is made of a ? phase is in a range of 1.2 or more and 2.0 or less.

Abstract: A bonded body includes an aluminum member made of an aluminum alloy and a copper member made of copper or a copper alloy, in which the aluminum member is made of an Al—Mn-based alloy containing Mn, an Mn concentration C0 of the entire aluminum member is in a range of 0.4 mass % or more and 1.5 mass % or less, and, when an Mn concentration in a region excluding a precipitate in the aluminum member is defined as an Mn solid solution concentration C1 and a value obtained by subtracting the Mn solid solution concentration C1 from the Mn concentration C0 of the entire aluminum member is defined as an Mn precipitate concentration C2, a ratio C1/C2 of the Mn solid solution concentration C1 to the Mn precipitate concentration C2 is in a range of 0.1 or more and 2.7 or less.

Abstract: A bonded body is formed by bonding a ceramic member formed of an Al-based ceramic and a copper member formed of copper or a copper alloy, in which, in a bonding layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on a ceramic member side, and, the Al concentration is 0.15 at % or less in a thickness range of 0.5 ?m to 3 ?m from an interface of the active metal compound layer on a copper member side toward the copper member.

Abstract: A bonded body is formed by bonding a ceramic member formed of an Al-based ceramic and a copper member formed of copper or a copper alloy, in which, in a bonding layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on a ceramic member side, and, the Al concentration is 0.15 at % or less in a thickness range of 0.5 ?m to 3 ?m from an interface of the active metal compound layer on a copper member side toward the copper member.

Abstract: An aluminum alloy member is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %, the aluminum alloy member and a copper member are bonded to each other through solid-phase diffusion, and a compound layer made up of a first intermetallic compound layer that is disposed on the aluminum alloy member side and made of a ? phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the copper member side and made of a ?2 phase of an intermetallic compound of Cu and Al, and a Cu—Al—Mg layer provided between the first intermetallic compound layer and the second intermetallic compound layer is provided in a bonding interface between the aluminum alloy member and the copper member.

Abstract: A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of an aluminum oxide, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of an interface between the copper member and the ceramic member; and a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase.

Abstract: A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of an aluminum nitride, wherein, the copper member and the ceramic member are bonded to each other, and a Mg solid solution layer is provided between the copper member and the ceramic member and contains Mg in a state of a solid solution in a Cu primary phase.

Abstract: A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonded interface between the ceramic member and the Cu member, a Cu—Sn layer which is positioned on the ceramic member side and in which Sn forms a solid solution in Cu, a first intermetallic compound layer which is positioned on the Cu member side and contains Cu and Ti, and a second intermetallic compound layer which is positioned between the first intermetallic compound layer and the Cu—Sn layer and contains P and Ti are formed.

Abstract: A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of a silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of a bonded interface between the copper member and the ceramic member, a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, and a magnesium nitride phase is present on a magnesium oxide layer side of the Mg solid solution layer.

Abstract: In a copper-ceramic bonded body of the present invention, at a bonding interface of a copper member and a ceramic member, there are formed a nitride compound layer containing one or more nitride forming elements selected from Ti, Nb, Hf, and Zr, and an Ag—Cu eutectic layer, in order from the ceramic member side, the thickness of the nitride compound layer is 0.15 ?m or more and 1.0 ?m or less, an intermetallic compound phase formed of an intermetallic compound that contains the nitride forming element and Si is present between the copper member and the ceramic member, and Cu and Si are present at the grain boundary of the nitride compound layer.

Abstract: A bonded body is formed to configured to join a ceramic member formed of a Si-based ceramic and a copper member formed of copper or a copper alloy, in which, in a joint layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on the ceramic member side.

Abstract: A power module substrate according to the present invention is a power module substrate in which a copper sheet made of copper or a copper alloy is laminated and bonded onto a surface of a ceramic substrate (11), an oxide layer (31) is formed on the surface of the ceramic substrate (11) between the copper sheet and the ceramic substrate (11), and the thickness of a Ag—Cu eutectic structure layer (32) is set to 15 ?m or less.

Abstract: A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonding layer formed between the ceramic member and the Cu member, an area ratio of a Cu3P phase in a region extending by up to 50 ?m toward the Cu member side from a bonding surface of the ceramic member is equal to or lower than 15%.

Abstract: A bonded body of copper and ceramic includes: a copper member made of copper or a copper alloy and a ceramic member made of an aluminum oxide, the copper member and the ceramic member being bonded to each other; a magnesium oxide layer which is formed on a ceramic member side between the copper member and the ceramic member; and a Mg solid solution layer which is formed between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, in which one or more active metals selected from Ti, Zr, Nb, and Hf are present in the Mg solid solution layer.

Abstract: In a copper/titanium/aluminum bonded body of the present invention, a copper member made of copper or a copper alloy and an aluminum member made of aluminum or an aluminum alloy are bonded via a titanium layer, an intermetallic compound containing Cu and Ti is formed at a bonded interface of the copper member and the titanium layer, and a maximum value of a length Li of an intermetallic compound unformed part along the bonded interface is 20 ?m or less in the bonding interface of the copper member and the titanium layer, the intermetallic compound unformed part being a part free of formation of the intermetallic compound, and a ratio ?Li/L0 is 0.16 or less, ?Li being a total length of the intermetallic compound unformed part along the bonded interface and of L0 being a total length of the bonded interface along the bonded interface.

Abstract: There is provided a copper/ceramic bonded body of the present invention in which a copper member made of copper or a copper alloy and a ceramic member made of aluminum nitride or silicon nitride are bonded to each other, in which an active metal nitride layer containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on the ceramic member side between the copper member and the ceramic member, a Mg solid solution layer in which Mg is dissolved in a Cu matrix phase is formed between the active metal nitride layer and the copper member, and the active metal is present in the Mg solid solution layer.

Abstract: A bonded body is formed to configured to join a ceramic member formed of a Si-based ceramic and a copper member formed of copper or a copper alloy, in which, in a joint layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on the ceramic member side.

Abstract: The method for manufacturing an insulated circuit board of the present invention includes: a ceramic/aluminum-joining step of joining an aluminum material to a ceramic substrate and thereby, forming an aluminum layer; a titanium material-disposing step of disposing a titanium material on a surface of the aluminum layer or the aluminum material in a circuit pattern shape; a titanium layer-forming step of performing a heat treatment in a state where the titanium material is laminated on the surface of the aluminum layer or the aluminum material and thereby, forming the titanium layer; and an etching treatment step of etching the aluminum layer on which the titanium layer is formed, into the circuit pattern shape.

Abstract: An aluminum alloy member is made of an aluminum alloy having a Mg concentration set in a range of 0.4 mass % or more and 7.0 mass % or less and a Si concentration set to less than 1 mass %, the aluminum alloy member and a copper member are bonded to each other through solid-phase diffusion, and a compound layer made up of a first intermetallic compound layer that is disposed on the aluminum alloy member side and made of a ? phase of an intermetallic compound of Cu and Al, a second intermetallic compound layer that is disposed on the copper member side and made of a ?2 phase of an intermetallic compound of Cu and Al, and a Cu—Al—Mg layer provided between the first intermetallic compound layer and the second intermetallic compound layer is provided in a bonding interface between the aluminum alloy member and the copper member.

Abstract: A bonded body is formed by bonding a ceramic member formed of an Al-based ceramic and a copper member formed of copper or a copper alloy, in which, in a bonding layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on a ceramic member side, and, the Al concentration is 0.15 at % or less in a thickness range of 0.5 ?m to 3 ?m from an interface of the active metal compound layer on a copper member side toward the copper member.