Patents by Inventor Norihiko Amikura

Norihiko Amikura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210216088
    Abstract: A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.
    Type: Application
    Filed: March 29, 2021
    Publication date: July 15, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Publication number: 20210134564
    Abstract: A gas supply system includes first and second gas supply lines, first and second valves, and a controller. The first gas supply line is connected between a process gas source and a substrate processing chamber and has an intermediate node. The second gas supply line is connected between a purge gas source and the intermediate node. The first valve is disposed upstream of the intermediate node on the first gas supply line. The second valve is disposed upstream of the first valve on the first gas supply line. A controller controls the first and second valves to open the first and second valves in a first mode for supplying a process gas from the process gas source to the substrate processing chamber, and close the first and second valves in a second mode for supplying a purge gas from the purge gas source to the substrate processing chamber.
    Type: Application
    Filed: October 26, 2020
    Publication date: May 6, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Patent number: 10996688
    Abstract: A gas supply system according to the present disclosure includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes. The gas supply system also includes a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes. The gas supply system further includes a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: May 4, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Publication number: 20210050190
    Abstract: A substrate processing method is provided. In the method, a process gas is supplied into a chamber. A pressure in the chamber is controlled to a first pressure by evacuating the chamber via a first exhaust line. Then, the pressure in the chamber is controlled to a second pressure that is higher than the first pressure by evacuating the chamber via a second exhaust line while closing the first exhaust line. Next, the pressure in the chamber is controlled to the first pressure by evacuating the chamber via the first exhaust line while closing the second exhaust line.
    Type: Application
    Filed: August 11, 2020
    Publication date: February 18, 2021
    Inventors: Kazuyuki MIURA, Norihiko AMIKURA
  • Publication number: 20210013012
    Abstract: A performance calculation method is provided. In the performance calculation method, shipment inspection data of multiple flow rate controllers are acquired. Further, first performance values indicating, as deviation values, performance of the flow rate controllers are calculated based on the acquired shipment inspection data and first coefficients for items indicating the performance of the flow rate controllers. Further, second performance values indicating, as deviation values, performance of a processing apparatus using the flow rate controllers are calculated based on the calculated first performance values and second coefficients for items indicating the performance of the processing apparatus.
    Type: Application
    Filed: July 7, 2020
    Publication date: January 14, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Patent number: 10876870
    Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: December 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Risako Miyoshi, Norihiko Amikura, Kazuyuki Miura, Masaaki Nagase, Satoru Yamashita, Yohei Sawada, Kouji Nishino, Nobukazu Ikeda
  • Patent number: 10871786
    Abstract: A substrate processing system includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: December 22, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Risako Miyoshi, Norihiko Amikura, Kazuyuki Miura, Hiroshi Yazaki, Yasuhiro Shoji
  • Patent number: 10859426
    Abstract: Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: December 8, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Hirose, Norihiko Amikura, Risako Miyoshi, Shinobu Onodera
  • Patent number: 10845119
    Abstract: A method includes a step of increasing or decreasing a flow rate of a gas of the a second gas supply system, by a predetermined time from a start of a gas treatment step of the process recipe or a by a predetermined time before a start of the gas treatment step, by using apparatus information regarding a first gas supply system of the first substrate treatment apparatus and the second gas supply system of the second substrate treatment apparatus, and arranging the treatment process, and in this step, the treatment process of the second substrate treatment apparatus performed using the process recipe conforms to the treatment process of the first substrate treatment apparatus performed using the process recipe.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: November 24, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Hirose, Norihiko Amikura, Risako Miyoshi
  • Patent number: 10788356
    Abstract: A method according to an aspect includes a first step of connecting a reference device to the other end of a connecting pipe, a second step of supplying a gas from one flow controller into piping, a third step of acquiring measured values of a first pressure gauge and a first thermometer, a fourth step of supplying a portion of the gas in piping into a tank, a fifth step of acquiring measured values of the first pressure gauge and the first thermometer or measured values of a second pressure gauge and a second thermometer, and a sixth step of using a Boyle-Charles' law to calculate a volume of the piping on the basis of the measured values acquired in the third step, the measured values acquired in the fifth step, and a volume of a closed space including a space in the tank when the third valve is closed.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: September 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Publication number: 20200292403
    Abstract: In a substrate processing system according to an exemplary embodiment, gas supply units are configured to supply gases to chambers through first gas flow channels thereof, respectively. Chamber pressure sensors are configured to measure pressures in the chambers. A second gas flow channel is connected to the first gas flow channel of each of the gas supply units. A reference pressure sensor is configured to measure a pressure in the second gas flow channel. In a method according to an exemplary embodiment, each of the chamber pressure sensors is calibrated by using a measurement value thereof and a measurement value of the reference pressure sensor which are obtained in a state where pressures in a corresponding chamber, the first gas flow channel of a corresponding gas supply unit, and the second gas flow channel are maintained.
    Type: Application
    Filed: March 2, 2020
    Publication date: September 17, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Risako MATSUDA, Norihiko AMIKURA, Kazuyuki MIURA, Keita SHOUJI
  • Publication number: 20200278225
    Abstract: The flow rate measurement method includes: measuring a first pressure of a gas filled in a first flow path connected to a flow rate controller and a second flow path connected to the first flow path; supplying a gas to the first and second flow paths via the flow rate controller and measuring a second pressure and a temperature of the gas filled in the first and second flow paths; after the gas is exhausted from the second flow path, measuring a third pressure of the gas filled in the second flow path; measuring a fourth pressure of the gas filled in the first and second flow paths; and calculating an amount of the gas supplied to the first and second flow paths via the flow rate controller, based on the first, second, third, and fourth pressures and the temperature.
    Type: Application
    Filed: May 27, 2019
    Publication date: September 3, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Norihiko AMIKURA, Risako MATSUDA, Kazuyuki MIURA
  • Patent number: 10665430
    Abstract: A gas supply system includes: a first flow channel connecting a first gas source and a chamber; a second flow channel connecting a second gas source and the first flow channel; a control valve, provided in the second flow channel, configured to control a flow rate of the second gas; an orifice provided downstream of the control valve and at a terminus of the second flow channel; a switching valve, provided at a connection point between the first flow channel and the terminus of the second flow channel, configured to control a supply timing of the second gas; an exhaust mechanism, connected to a flow channel between the control valve and the orifice in the second flow channel, configured to exhaust the second gas; and a controller configured to bring the control valve, the switching valve and the exhaust mechanism into operation.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: May 26, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura, Kouji Nishino, Yohei Sawada, Yoshiharu Kishida
  • Publication number: 20200124456
    Abstract: The method of inspecting a flow rate controller for controlling a flow rate of a fluid, the flow rate controller including a first pressure detector for detecting a first pressure that is a pressure of the fluid, and a diaphragm valve provided downstream of the first pressure detector and having a diaphragm and a piezoelectric element for driving the diaphragm, the method including: acquiring reference data including the first pressure and a control value of the piezoelectric element with respect to a set flow rate of the fluid; measuring target data including the first pressure and the control value of the piezoelectric element with respect to the set flow rate of the fluid after execution of the acquiring; and determining whether or not there is a problem in the diaphragm valve, by comparing the reference data with the target data.
    Type: Application
    Filed: October 18, 2019
    Publication date: April 23, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Publication number: 20200124455
    Abstract: The method for inspecting the flow rate controller for controlling a flow rate of a fluid includes creating and recording a three-dimensional database in which a first pressure, a set flow rate or a second pressure, and a control value of a piezoelectric element are associated with each other, based on reference data, measuring, as target data, control values of the piezoelectric element corresponding to the first pressure detected by a first pressure detector and the set flow rate specified in a recipe of a substrate processing process or the second pressure detected by a second pressure detector, at the time of the execution of the substrate processing process, and determining whether or not there is a problem in a diaphragm valve, by comparing the target data with the reference data included in the three-dimensional database.
    Type: Application
    Filed: October 18, 2019
    Publication date: April 23, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Patent number: 10533916
    Abstract: Leaks in valves provided in a plurality of pipes connected to a plurality of gas sources are inspected. In a method of an embodiment, a first valve provided in a first pipe connected to a gas source is closed, and a second valve provided in a first pipe on a downstream side of the first valve is opened. A pressure increase is detected by a pressure gauge on a downstream side of the first pipe. In addition, the first valve is opened, and the second valve is closed. A pressure increase is detected by a pressure gauge on a downstream side of the first pipe.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: January 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Publication number: 20190301912
    Abstract: A substrate processing system according to an exemplary embodiment includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.
    Type: Application
    Filed: March 22, 2019
    Publication date: October 3, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Risako MIYOSHI, Norihiko AMIKURA, Kazuyuki MIURA, Hiroshi YAZAKI, Yasuhiro SHOJI
  • Patent number: 10424466
    Abstract: The present disclosure provides a method for inspecting a shower plate of a plasma processing apparatus. In the plasma processing apparatus, a gas ejection unit includes a shower plate. A plurality of gas ejection holes are formed on the shower plate. This method includes (i) setting a flow rate of gas output from a first flow rate controller, and (ii) acquiring a measurement value indicating a pressure in a flow path inside a second pressure control type flow rate controller by using a pressure gauge of the second flow rate controller in a state where the gas output from the first flow rate controller at the set flow rate is supplied to the gas ejection unit and branched between the first flow rate controller and the gas ejection unit so as to be supplied to the flow path inside the second flow rate controller.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: September 24, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Publication number: 20190212176
    Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method of an embodiment, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.
    Type: Application
    Filed: January 3, 2019
    Publication date: July 11, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Risako MIYOSHI, Norihiko AMIKURA, Kazuyuki MIURA, Masaaki NAGASE, Satoru YAMASHITA, Yohei SAWADA, Kouji NISHINO, Nobukazu IKEDA
  • Publication number: 20190138033
    Abstract: A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.
    Type: Application
    Filed: November 5, 2018
    Publication date: May 9, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA