Patents by Inventor Norihito Sone

Norihito Sone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10304962
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: May 28, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Publication number: 20190051759
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Application
    Filed: October 17, 2018
    Publication date: February 14, 2019
    Inventors: Kengo AKIMOTO, Tatsuya HONDA, Norihito SONE
  • Publication number: 20150340513
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Application
    Filed: August 3, 2015
    Publication date: November 26, 2015
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo AKIMOTO, Tatsuya HONDA, Norihito SONE
  • Patent number: 9099562
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: August 17, 2009
    Date of Patent: August 4, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Patent number: 9034675
    Abstract: Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
    Type: Grant
    Filed: June 9, 2014
    Date of Patent: May 19, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kengo Akimoto, Junichiro Sakata, Yoshiharu Hirakata, Norihito Sone
  • Publication number: 20140287546
    Abstract: Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
    Type: Application
    Filed: June 9, 2014
    Publication date: September 25, 2014
    Inventors: Shunpei Yamazaki, Kengo Akimoto, Junichiro Sakata, Yoshiharu Hirakata, Norihito Sone
  • Patent number: 8796069
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: August 5, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Patent number: 8790959
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: January 21, 2011
    Date of Patent: July 29, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Patent number: 8759131
    Abstract: Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: June 24, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kengo Akimoto, Junichiro Sakata, Yoshiharu Hirakata, Norihito Sone
  • Patent number: 8691623
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: April 8, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Patent number: 8669550
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: March 11, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Patent number: 8629069
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: January 14, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Patent number: 8551893
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: October 8, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Patent number: 8466463
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: June 18, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Patent number: 8288199
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: October 16, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Patent number: 8274077
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: September 25, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Publication number: 20110163311
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Application
    Filed: November 17, 2010
    Publication date: July 7, 2011
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Publication number: 20110121290
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Application
    Filed: January 21, 2011
    Publication date: May 26, 2011
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone
  • Publication number: 20110117697
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Application
    Filed: January 21, 2011
    Publication date: May 19, 2011
    Inventors: Kengo AKIMOTO, Tatsuya HONDA, Norihito SONE
  • Publication number: 20110104851
    Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
    Type: Application
    Filed: November 19, 2010
    Publication date: May 5, 2011
    Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone