Patents by Inventor Norikatsu Sasao

Norikatsu Sasao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210296116
    Abstract: A method of forming a pattern of an embodiment includes: forming an etch mask on a film to be processed by using a pattern-forming material containing an organic polymer; and patterning the etch mask. In the method of the embodiment, the organic polymer contains 70 atom % or more carbon atoms having an sp2 orbital and 5 atom % or more carbon atoms having an sp3 orbital among the carbon atoms constituting the organic polymer. The patterned etch mask is used for etching of the film to be processed with a gas containing a fluorine atom.
    Type: Application
    Filed: August 19, 2020
    Publication date: September 23, 2021
    Applicant: Kioxia Corporation
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
  • Publication number: 20210082693
    Abstract: A method of forming an organic film according to one embodiment, includes: forming an organic film on a substrate with a pattern forming material; patterning the organic film to form a patterned film; and supplying a precursor of a metallic compound to the patterned film to form a mask pattern. The material contains a polymer having a side chain including an unshared electron pair and a group having oxidation activity to the precursor. The group includes at least one group selected the group consisting of a carboxyl group, a hydroxyl group, a sulfo group, and a nitro group. An average number of the group per monomer unit is 0.3 or more. The metallic compound contains a metal with an atomic number of 22 or more in group 3 elements to group 13 elements.
    Type: Application
    Filed: March 12, 2020
    Publication date: March 18, 2021
    Applicant: Kioxia Corporation
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
  • Publication number: 20210070898
    Abstract: A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where R21 is H or CH3, each R22 is a hydrocarbon group of C2-14 where ? carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C1-20 carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.
    Type: Application
    Filed: March 10, 2020
    Publication date: March 11, 2021
    Applicant: Kioxia Corporation
    Inventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
  • Publication number: 20210040345
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.
    Type: Application
    Filed: October 28, 2020
    Publication date: February 11, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Norikatsu SASAO, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Patent number: 10877374
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: December 29, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Koji Asakawa, Seekei Lee, Naoko Kihara, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20200294795
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device is disclosed. The method of manufacturing a semiconductor device, includes forming an organic film containing polyacrylonitrile on a target film on a semiconductor substrate; applying a metal compound to the organic film to form a composite film; removing the composite film partially to form a pattern; heating the pattern-formed composite film; and processing the target film by using the heated composite film as a mask.
    Type: Application
    Filed: September 6, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
  • Publication number: 20200291155
    Abstract: According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.
    Type: Application
    Filed: September 6, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
  • Publication number: 20200291156
    Abstract: According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.
    Type: Application
    Filed: September 6, 2019
    Publication date: September 17, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
  • Patent number: 10672621
    Abstract: The pattern forming material of an embodiment is a pattern forming material containing a polymer composed of two or more kinds of monomer units, in which a first monomer unit in the monomer units is provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and a second monomer unit in the monomer units is provided with a crosslinkable functional group on a side chain terminal.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: June 2, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20200123299
    Abstract: According to one embodiment, a pattern formation material is included in a polymer layer to be provided between a block copolymer layer and a substrate. The block copolymer layer includes a block copolymer including a plurality of blocks. The pattern formation material includes a pattern formation polymer. The pattern formation polymer consists of a main chain including an acrylic backbone, and a side chain. One of the plurality of blocks include a plurality of polymer components. The plurality of polymer components are of mutually-different types. A solubility parameter of the pattern formation material is between a maximum value and a minimum value of a solubility parameter of the polymer components.
    Type: Application
    Filed: December 18, 2019
    Publication date: April 23, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Koji ASAKAWA, Norikatsu SASAO, Tomoaki SAWABE, Naoko KIHARA, Shinobu SUGIMURA
  • Publication number: 20200006076
    Abstract: The pattern forming material of an embodiment is a pattern forming material containing a polymer composed of two or more kinds of monomer units, in which a first monomer unit in the monomer units is provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and a second monomer unit in the monomer units is provided with a crosslinkable functional group on a side chain terminal.
    Type: Application
    Filed: March 12, 2019
    Publication date: January 2, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20190218321
    Abstract: A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.
    Type: Application
    Filed: September 6, 2018
    Publication date: July 18, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Ryosuke YAMAMOTO, Seiji Morita, Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20190169461
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.
    Type: Application
    Filed: July 27, 2018
    Publication date: June 6, 2019
    Applicant: Toshiba Memory Corporation
    Inventors: Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20190086803
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.
    Type: Application
    Filed: March 8, 2018
    Publication date: March 21, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Koji Asakawa, Seekei Lee, Naoko Kihara, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20190084829
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a preparation process, a first layer formation process, a block copolymer layer formation process, and a contact process. The preparation process prepares a pattern formation material including a polymer including a first chemical structure including carbon, hydrogen, and a first group. The first group includes one of a vinyl group, a hydroxy group, or a first element. The first layer formation process forms a first layer on a base body. The first layer includes the pattern formation material. The block copolymer layer formation process forms a block copolymer layer on the first layer. The block copolymer layer includes a first polymer and a second polymer. The block copolymer layer formation process includes forming first and second regions. The contact process causes the block copolymer layer to contact a metal compound including a metallic element.
    Type: Application
    Filed: March 9, 2018
    Publication date: March 21, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu SASAO, Koji Asakawa, Seekei Lee, Naoko Kihara, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20190086805
    Abstract: According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.
    Type: Application
    Filed: March 13, 2018
    Publication date: March 21, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Koji ASAKAWA, Naoko KIHARA, Seekei LEE, Norikatsu SASAO, Tomoaki SAWABE, Shinobu SUGIMURA
  • Publication number: 20180265616
    Abstract: According to one embodiment, a pattern formation material is included in a polymer layer to be provided between a block copolymer layer and a substrate. The block copolymer layer includes a block copolymer including a plurality of blocks. The pattern formation material includes a pattern formation polymer. The pattern formation polymer consists of a main chain including an acrylic backbone, and a side chain. One of the plurality of blocks include a plurality of polymer components. The plurality of polymer components are of mutually-different types. A solubility parameter of the pattern formation material is between a maximum value and a minimum value of a solubility parameter of the polymer components.
    Type: Application
    Filed: September 13, 2017
    Publication date: September 20, 2018
    Applicant: Toshiba Memory Corporation
    Inventors: Koji ASAKAWA, Norikatsu Sasao, Tomoaki Sawabe, Naoko Kihara, Shinobu Sugimura
  • Patent number: 8956560
    Abstract: In one embodiment, a method of manufacturing a mold includes: forming a first layer having an affinity to a second polymer on a substrate having an affinity to a first polymer; forming first and second openings in the first layer; filling a resist in the second openings and hardening the resist to obtain a hardened resist; and forming a second layer containing a block copolymer and causing it to self-assemble.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: February 17, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yasuaki Ootera, Yoshiyuki Kamata, Naoko Kihara, Yoshiaki Kawamonzen, Takeshi Okino, Ryosuke Yamamoto, Tomoyuki Maeda, Norikatsu Sasao, Akiko Yuzawa, Takuya Shimada, Hiroyuki Hieda
  • Patent number: 8916053
    Abstract: A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.
    Type: Grant
    Filed: June 20, 2012
    Date of Patent: December 23, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshiaki Kawamonzen, Yasuaki Ootera, Akiko Yuzawa, Naoko Kihara, Yoshiyuki Kamata, Hiroyuki Hieda, Norikatsu Sasao, Ryosuke Yamamoto, Takeshi Okino, Tomoyuki Maeda, Takuya Shimada
  • Patent number: 8865010
    Abstract: In one embodiment, a pattern forming method includes: forming a functional layer having a functional group to cross-link a first polymer on a substrate; forming a diblock copolymer layer having the first polymer and a second polymer on the functional layer; self-assembling the diblock copolymer layer to form a self-assembled layer, the self-assembled layer having a first domain corresponding to the first polymer, and a plurality of second domains corresponding to the second polymer and surrounded by or interposed in the first domain; cross-linking the first polymer in the self-assembled layer with the functional group in the functional layer to form a bonding layer disposed in the self-assembled layer and bonded to the functional layer; and washing or etching the self-assembled layer to remain the bonding layer.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: October 21, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naoko Kihara, Hiroyuki Hieda, Akiko Yuzawa, Norikatsu Sasao, Ryosuke Yamamoto, Yoshiyuki Kamata