Patents by Inventor Norikatsu Sasao
Norikatsu Sasao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240004298Abstract: A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3), where, R1 is H or CH3, R2 is a C2-14 hydrocarbon group, Q is a C1-20 hydrocarbon group, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of them being the C1-4 hydrocarbon group.Type: ApplicationFiled: September 13, 2023Publication date: January 4, 2024Applicant: Kioxia CorporationInventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
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Patent number: 11820840Abstract: A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where R21 is H or CH3, each R22 is a hydrocarbon group of C2-14 where a carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C1-20 carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.Type: GrantFiled: March 21, 2023Date of Patent: November 21, 2023Assignee: Kioxia CorporationInventors: Norikatsu Sasao, Koji Asakawa, Shinobu Sugimura
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Patent number: 11796915Abstract: A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3), where, R1 is H or CH3, R2 is a C2-14 hydrocarbon group, Q is a C1-20 hydrocarbon group, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of them being the C1-4 hydrocarbon group.Type: GrantFiled: March 9, 2021Date of Patent: October 24, 2023Assignee: Kioxia CorporationInventors: Norikatsu Sasao, Koji Asakawa, Shinobu Sugimura
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Publication number: 20230220130Abstract: A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (3) described below, where R21 is H or CH3, each R22 is a hydrocarbon group of C2-14 where a carbon is primary carbon, secondary carbon or tertiary carbon, Q is a single bond or a hydrocarbon group of C1-20 carbon atoms which may include an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms of or at a bond terminal, and a halogen atom may be substituted for the hydrogen atom.Type: ApplicationFiled: March 21, 2023Publication date: July 13, 2023Applicant: Kioxia CorporationInventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
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Patent number: 11639402Abstract: A pattern forming material is configured to use for forming an organic film on a film to be processed, patterning the organic film, and then forming a composite film by infiltrating a metallic compound into the patterned organic film. The pattern forming material contains a polymer including a monomer unit represented by a general formula (1) described below, wherein, R5 is a hydrogen atom or a methyl group, each R6 independently is an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or an s-butyl group, and a monomer unit derived from a compound represented by a general formula (2) described below, wherein, R11 is a hydrogen atom or a methyl group, each R12 independently is a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, an s-butyl group, or a t-butyl group.Type: GrantFiled: March 10, 2020Date of Patent: May 2, 2023Assignee: Kioxia CorporationInventors: Norikatsu Sasao, Koji Asakawa, Shinobu Sugimura
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Publication number: 20230086850Abstract: A method for manufacturing an indium-containing organic polymer film includes forming an organic polymer film on a base body, infiltrating the organic polymer film with an alkylindium having an alkyl group having 2 to 4 carbon atoms, and oxidizing the organic polymer film infiltrated with the alkylindium.Type: ApplicationFiled: February 18, 2022Publication date: March 23, 2023Applicant: Kioxia CorporationInventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
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Publication number: 20230089206Abstract: A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.Type: ApplicationFiled: February 28, 2022Publication date: March 23, 2023Applicant: Kioxia CorporationInventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA, Ryosuke YAMAMOTO
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Patent number: 11410848Abstract: A method of forming a pattern of an embodiment includes: forming an etch mask on a film to be processed by using a pattern-forming material containing an organic polymer; and patterning the etch mask. In the method of the embodiment, the organic polymer contains 70 atom % or more carbon atoms having an sp2 orbital and 5 atom % or more carbon atoms having an sp3 orbital among the carbon atoms constituting the organic polymer. The patterned etch mask is used for etching of the film to be processed with a gas containing a fluorine atom.Type: GrantFiled: August 19, 2020Date of Patent: August 9, 2022Assignee: KIOXIA CORPORATIONInventors: Koji Asakawa, Norikatsu Sasao, Shinobu Sugimura
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Patent number: 11393671Abstract: A method of forming an organic film according to one embodiment, includes: forming an organic film on a substrate with a pattern forming material; patterning the organic film to form a patterned film; and supplying a precursor of a metallic compound to the patterned film to form a mask pattern. The material contains a polymer having a side chain including an unshared electron pair and a group having oxidation activity to the precursor. The group includes at least one group selected the group consisting of a carboxyl group, a hydroxyl group, a sulfo group, and a nitro group. An average number of the group per monomer unit is 0.3 or more. The metallic compound contains a metal with an atomic number of 22 or more in group 3 elements to group 13 elements.Type: GrantFiled: March 12, 2020Date of Patent: July 19, 2022Assignee: Kioxia CorporationInventors: Koji Asakawa, Norikatsu Sasao, Shinobu Sugimura
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Publication number: 20220221792Abstract: A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.Type: ApplicationFiled: March 29, 2022Publication date: July 14, 2022Applicant: Kioxia CorporationInventors: Ryosuke YAMAMOTO, Seiji MORITA, Norikatsu SASAO, Koji ASAKAWA, Tomoaki SAWABE, Shinobu SUGIMURA
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Patent number: 11378885Abstract: According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.Type: GrantFiled: March 13, 2018Date of Patent: July 5, 2022Assignee: Kioxia CorporationInventors: Koji Asakawa, Naoko Kihara, Seekei Lee, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
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Patent number: 11320736Abstract: A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.Type: GrantFiled: September 6, 2018Date of Patent: May 3, 2022Assignee: KIOXIA CORPORATIONInventors: Ryosuke Yamamoto, Seiji Morita, Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
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Publication number: 20220091510Abstract: A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed, the pattern forming material contains a polymer including a monomer unit represented by the following general formula (3), where, R1 is H or CH3, R2 is a C2-14 hydrocarbon group, Q is a C1-20 hydrocarbon group, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of them being the C1-4 hydrocarbon group.Type: ApplicationFiled: March 9, 2021Publication date: March 24, 2022Applicant: Kioxia CorporationInventors: Norikatsu SASAO, Koji ASAKAWA, Shinobu SUGIMURA
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Publication number: 20220049036Abstract: According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.Type: ApplicationFiled: October 29, 2021Publication date: February 17, 2022Applicant: TOSHIBA MEMORY CORPORATIONInventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
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Patent number: 11192972Abstract: According to one embodiment, a polymer material is disclosed. The polymer material contains a polymer. The polymer contains a first monomer unit having a lone pair and an aromatic ring at a side chain, and a second monomer unit including a crosslinking group at a terminal of the side chain, with its molar ratio of 0.5 mol % to 10 mol % to all monomer units in the polymer. The polymer material can be used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film can be formed by a process including, forming an organic film on the target film with the polymer material, patterning the organic film, and forming the composite film by impregnating a metal compound into the patterned organic film.Type: GrantFiled: September 6, 2019Date of Patent: December 7, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Koji Asakawa, Norikatsu Sasao, Shinobu Sugimura
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Patent number: 11192971Abstract: According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.Type: GrantFiled: September 6, 2019Date of Patent: December 7, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Norikatsu Sasao, Koji Asakawa, Shinobu Sugimura
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Patent number: 11177129Abstract: According to one embodiment, a method of manufacturing a semiconductor device is disclosed. The method of manufacturing a semiconductor device, includes forming an organic film containing polyacrylonitrile on a target film on a semiconductor substrate; applying a metal compound to the organic film to form a composite film; removing the composite film partially to form a pattern; heating the pattern-formed composite film; and processing the target film by using the heated composite film as a mask.Type: GrantFiled: September 6, 2019Date of Patent: November 16, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Norikatsu Sasao, Koji Asakawa, Shinobu Sugimura
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Patent number: 11161999Abstract: According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.Type: GrantFiled: October 28, 2020Date of Patent: November 2, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Norikatsu Sasao, Koji Asakawa, Tomoaki Sawabe, Shinobu Sugimura
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Publication number: 20210296116Abstract: A method of forming a pattern of an embodiment includes: forming an etch mask on a film to be processed by using a pattern-forming material containing an organic polymer; and patterning the etch mask. In the method of the embodiment, the organic polymer contains 70 atom % or more carbon atoms having an sp2 orbital and 5 atom % or more carbon atoms having an sp3 orbital among the carbon atoms constituting the organic polymer. The patterned etch mask is used for etching of the film to be processed with a gas containing a fluorine atom.Type: ApplicationFiled: August 19, 2020Publication date: September 23, 2021Applicant: Kioxia CorporationInventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA
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Publication number: 20210082693Abstract: A method of forming an organic film according to one embodiment, includes: forming an organic film on a substrate with a pattern forming material; patterning the organic film to form a patterned film; and supplying a precursor of a metallic compound to the patterned film to form a mask pattern. The material contains a polymer having a side chain including an unshared electron pair and a group having oxidation activity to the precursor. The group includes at least one group selected the group consisting of a carboxyl group, a hydroxyl group, a sulfo group, and a nitro group. An average number of the group per monomer unit is 0.3 or more. The metallic compound contains a metal with an atomic number of 22 or more in group 3 elements to group 13 elements.Type: ApplicationFiled: March 12, 2020Publication date: March 18, 2021Applicant: Kioxia CorporationInventors: Koji ASAKAWA, Norikatsu SASAO, Shinobu SUGIMURA