Abstract: A nitride semiconductor device 1 includes a first nitride semiconductor layer 4 that constitutes an electron transit layer, a second nitride semiconductor layer 5 that is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer, and a gate portion 20 that is formed on the second nitride semiconductor layer. The gate portion 20 includes a first semiconductor gate layer 21 of a ridge shape that is disposed on the second nitride semiconductor layer 5 and is constituted of a nitride semiconductor containing an acceptor type impurity, a second semiconductor gate layer 22 that is formed on the first semiconductor gate layer 21 and is constituted of a nitride semiconductor with a larger bandgap than the first semiconductor gate layer 21, and a gate electrode 23 that is formed on the second semiconductor gate layer 22 and is in Schottky junction with the second semiconductor gate layer 22.

Abstract: A piezoelectric element includes a single crystal piezoelectric film, wherein the single crystal piezoelectric film includes an aluminum nitride film and wherein a full width at half maximum at (002) diffraction peak of the aluminum nitride film is smaller than 1.00 degree.

Abstract: A solar battery device includes a semiconductor substrate and a covering part. The semiconductor substrate has a first semiconductor region and a second semiconductor region. The first semiconductor region is a first-conductivity-type semiconductor region located on a first surface of the semiconductor substrate. The second semiconductor region is a second-conductivity-type semiconductor region different from the first-conductivity-type and located on a second surface opposite from the first surface. The covering part is located on the first surface of the semiconductor substrate. The covering part has a laminated portion in which a plurality of layers including a passivation layer and an antireflection layer are present in a laminated state. In the laminated portion, the passivation layer includes a region in which a thickness decreases from an outer peripheral portion toward a central part of the first surface.

Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene

Abstract: A motor drive apparatus includes: inverter modules equivalent in number to phases of a motor; and a control unit that generates a PWM signal for driving the inverter modules by using PWM. Each of the inverter modules includes: a plurality of pairs of switching elements, each pair of switching elements including two switching elements connected in series; a drive circuit; and a protection circuit. The plurality of pairs of switching elements is connected in parallel, and power GNDs that are reference terminals of the plurality of pairs of switching elements, a control GND that is a reference terminal of the drive circuit, and a terminal for overcurrent fault input in the protection circuit are independently exposed to the outside. The power GNDs and the control GND are connected to a single point on a printed circuit board by a wiring pattern.

Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene

Abstract: A nitride semiconductor device includes a first impurity layer made of an Al1-XGaXN (0<X?1) based material and containing a first impurity with which a depth of an acceptor level from a valence band (ET-EV) is made not less than 0.3 eV but less than 0.6 eV, an electron transit layer formed on the first impurity layer, an electron supply layer formed on the electron transit layer, agate electrode formed on the electron transit layer, and a source electrode and a drain electrode formed such that the source electrode and the drain electrode sandwich the gate electrode and electrically connected to the electron supply layer.

Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene

Abstract: A motor driving device that converts alternating-current power to direct-current power and drives a motor, the motor driving device including a printed circuit board having a first plate surface and a second plate surface, having an inverter module and an inverter module provided on the first plate surface, having a first power pattern provided on the second plate surface and connected to the inverter module, having a second power pattern provided on the second plate surface and connected to the inverter module, and having a jumper portion to connect the first power pattern and the second power pattern. A cross-sectional area of the jumper portion is larger than a cross-sectional area of the first power pattern or the second power pattern.

Abstract: A nitride semiconductor device includes: an electron transit layer including GaxIn1-xN (0<x?1); an electron supply layer formed on the electron transit layer and including AlyIn1-yN (0<y?1); a gate insulating film formed to pass through the electron supply layer to contact the electron transit layer; and a gate electrode facing the electron transit layer with the gate insulating film interposed therebetween, wherein, in the electron transit layer, a portion contacting the gate insulating film and a portion contacting the electron transit layer are flush with each other.

Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene

Abstract: A motor drive apparatus driving a motor as a three-phase motor converting direct power into three-phase alternating power, includes: inverter modules equivalent in number to phases of the motor; and a control unit generating PWM signals used to drive the inverter modules with PWM. The inverter modules each include a plurality of switching element pairs connected in parallel, each of the switching element pairs including two switching elements connected in series.

Abstract: A solar battery device includes a semiconductor substrate and a covering part. The semiconductor substrate has a first semiconductor region and a second semiconductor region. The first semiconductor region is a first-conductivity-type semiconductor region located on a first surface of the semiconductor substrate. The second semiconductor region is a second-conductivity-type semiconductor region different from the first-conductivity-type and located on a second surface opposite from the first surface. The covering part is located on the first surface of the semiconductor substrate. The covering part has a laminated portion in which a plurality of layers including a passivation layer and an antireflection layer are present in a laminated state. In the laminated portion, the passivation layer includes a region in which a thickness decreases from an outer peripheral portion toward a central part of the first surface.

Abstract: A motor drive apparatus which drives a motor includes inverter modules equal in number to phases of the motor. Each of the inverter modules includes a plurality of switching element pairs. Each of the switching element pairs is defined by two switching elements connected in series. In each of the inverter modules, the plurality of switching element pairs are connected in parallel, and each of resistance values of gate resistors connected to the switching elements is set for the corresponding switching element connected thereto.

Abstract: A motor driving device that converts alternating-current power to direct-current power and drives a motor, the motor driving device including a printed circuit board having a first plate surface and a second plate surface, having an inverter module and an inverter module provided on the first plate surface, having a first power pattern provided on the second plate surface and connected to the inverter module, having a second power pattern provided on the second plate surface and connected to the inverter module, and having a jumper portion to connect the first power pattern and the second power pattern. A cross-sectional area of the jumper portion is larger than a cross-sectional area of the first power pattern or the second power pattern.

Abstract: There are provided the same number of inverter modules as the number of phases of a motor, and an inverter control unit that generates PWM signals used to drive the inverter modules in PWM. Three phase outputs from each of the inverter modules are coupled to form a phase output signal for one phase of the motor while capacitors are mounted between control GNDs of the inverter modules and power GNDs of the inverter modules. Consequently, even if a surge voltage is generated in a GND wiring at the time of a switching operation of switching elements in the inverter modules, the application of the surge voltage to the switching elements can be suppressed.

Abstract: A motor drive apparatus includes: inverter modules equivalent in number to phases of a motor; and a control unit that generates a PWM signal for driving the inverter modules by using PWM. Each of the inverter modules includes: a plurality of pairs of switching elements, each pair of switching elements including two switching elements connected in series; a drive circuit; and a protection circuit. The plurality of pairs of switching elements is connected in parallel, and power GNDs that are reference terminals of the plurality of pairs of switching elements, a control GND that is a reference terminal of the drive circuit, and a terminal for overcurrent fault input in the protection circuit are independently exposed to the outside. The power GNDs and the control GND are connected to a single point on a printed circuit board by a wiring pattern.

Abstract: A nitride semiconductor device includes: an electron transit layer including GaxIn1-xN (0<x?1); an electron supply layer formed on the electron transit layer and including AlyIn1-yN (0<y?1); a gate insulating film formed to pass through the electron supply layer to contact the electron transit layer; and a gate electrode facing the electron transit layer with the gate insulating film interposed therebetween, wherein, in the electron transit layer, a portion contacting the gate insulating film and a portion contacting the electron transit layer are flush with each other.

Abstract: A nitride semiconductor device includes an electron transit layer (103) that is formed of a nitride semiconductor, an electron supply layer (104) that is formed on the electron transit layer (103), that is formed of a nitride semiconductor whose composition is different from the electron transit layer (103) and that has a recess (109) which reaches the electron transit layer (103) from a surface, a thermal oxide film (111) that is formed on the surface of the electron transit layer (103) exposed within the recess (109), a gate insulating film (110) that is embedded within the recess (109) so as to be in contact with the thermal oxide film (111), a gate electrode (108) that is formed on the gate insulating film (110) and that is opposite to the electron transit layer (103) across the thermal oxide film (111) and the gate insulating film (110), and a source electrode (106) and a drain electrode (107) that are provided on the electron supply layer (104) at an interval such that the gate electrode (108) intervene

Abstract: A nitride semiconductor device includes: an electron transit layer including GaxIn1-xN (0<x?1); an electron supply layer formed on the electron transit layer and including AlyIn1-yN (0<y?1); a gate insulating film formed to pass through the electron supply layer to contact the electron transit layer; and a gate electrode facing the electron transit layer with the gate insulating film interposed therebetween, wherein, in the electron transit layer, a portion contacting the gate insulating film and a portion contacting the electron transit layer are flush with each other.