Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3):

Abstract: A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3):

Abstract: A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

Abstract: A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

Abstract: A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3):

Abstract: A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Abstract: Provided is a vibrating device which can generate efficient vibrations in a vibrating member and efficiently apply vibrations to a gas, a jet flow generating device in which the vibrating device has been implemented, and an electronic device in which the jet flow generating device has been implemented. A jet flow generating device 10 has a vibrating device 15 including a frame 4, and actuator 5 mounted on the frame 4, and a vibrating member 3 supported on the frame 4 by an elastic supporting member 6. The vibrating member 3 has a side plate 3b formed on the perimeter portion of a disc-shaped vibrating plate 3a, for example. Vibration of the vibrating member 3 applies vibrations to air within chambers 11a and 11b, whereby gas can alternatingly be blown from nozzles 2a and 2b.

Abstract: Provided is a vibrating device which can generate efficient vibrations in a vibrating member and efficiently apply vibrations to a gas, a jet flow generating device in which the vibrating device has been implemented, and an electronic device in which the jet flow generating device has been implemented. A jet flow generating device 10 has a vibrating device 15 including a frame 4, and actuator 5 mounted on the frame 4, and a vibrating member 3 supported on the frame 4 by an elastic supporting member 6. The vibrating member 3 has a side plate 3b formed on the perimeter portion of a disc-shaped vibrating plate 3a, for example. Vibration of the vibrating member 3 applies vibrations to air within chambers 11a and 11b, whereby gas can alternatingly be blown from nozzles 2a and 2b.

Abstract: A jet flow generating apparatus that suppresses noise as much as possible and effectively radiates the heat generated by a heat generating member, an electronic device that is equipped with the jet flow generating apparatus, and a jet flow generating method are provided. According to the present invention, a jet flow generating apparatus comprises a plurality of chambers each having an opening and each containing a coolant, a vibrating mechanism for vibrating the coolant contained in each of the plurality of chambers so as to discharge the coolant as a pulsating flow through the openings, and a control unit for controlling the vibration of the vibrating mechanism so that the sound waves generated by the coolant discharged from the plurality of chambers weaken each other.

Abstract: The invention provides a working vehicle which can easily couple the accelerator arm of the governor of the engine and the shift peal in spite that the rotating speed of the engine can be easily changed on the basis of the operation of the shift pedal, and the manufacturing cost can be easily reduced. In a working vehicle provide with an engine mounted to a traveling machine body provided with traveling wheels, a hydraulic continuously variable transmission shifting a power from the engine, and a shift pedal operating so as to increase and decrease a shift output of the hydraulic continuously variable transmission and an accelerator arm of the engine are coupled via an interlocking mechanism.

Abstract: Disclosed is a light-emitting device. The light-emitting device includes an EL layer and a heat dissipation layer. The EL layer includes a first semiconductor layer, a second semiconductor layer, and an active layer, the first semiconductor layer having a first conductivity type that is one of n type and p type, the second semiconductor layer having a second conductivity type that is opposite to the first conductivity type, the active layer being provided between the first semiconductor layer and the second semiconductor layer. The heat dissipation layer has the first conductivity type and is bonded to a side of the EL layer closer to the second semiconductor layer than the first semiconductor layer.