Abstract: A light-emitting element and a light-emitting device having low light loss, high luminance, and high light extraction efficiency are provided. The light-emitting element includes: a semiconductor structure layer having a light-emitting layer; a light-transmitting substrate provided on the semiconductor structure layer; a wavelength conversion layer disposed on the light-transmitting substrate; a light-transmitting covering member configured to cover at least a part of a side surface of the light-transmitting substrate and have transparency to light from the light-emitting layer; and a light-shielding member configured to entirely cover surfaces including a surface of the light-transmitting covering member, and including a side surface of the semiconductor structure layer, a side surface of the light-transmitting substrate, and a side surface of the wavelength conversion layer.

Abstract: A light-emitting device in which a light-emitting element and a substrate are reliably bonded to each other and which has high operation stability is provided. The light-emitting device includes the substrate, the light-emitting element disposed on the substrate with a bonding layer interposed therebetween, and a resin body configured to surround and cover entire side surfaces of the light-emitting element, and have a bottom surface having any of a curved surface shape and a planar surface shape that faces the substrate and is configured to be distant from the substrate between the resin body and the substrate as a distance from the side surface of the light-emitting element increases.

Abstract: A light-emitting element and a light-emitting device having low light loss, high luminance, and high light extraction efficiency are provided. The light-emitting element includes: a semiconductor structure layer having a light-emitting layer; a light-transmitting substrate provided on the semiconductor structure layer; a wavelength conversion layer disposed on the light-transmitting substrate; a light-transmitting covering member configured to cover at least a part of a side surface of the light-transmitting substrate and have transparency to light from the light-emitting layer; and a light-shielding member configured to entirely cover surfaces including a surface of the light-transmitting covering member, and including a side surface of the semiconductor structure layer, a side surface of the light-transmitting substrate, and a side surface of the wavelength conversion layer.

Abstract: A light-emitting device in which a light-emitting element and a substrate are reliably bonded to each other and which has high operation stability is provided. The light-emitting device includes the substrate, the light-emitting element disposed on the substrate with a bonding layer interposed therebetween, and a resin body configured to surround and cover entire side surfaces of the light-emitting element, and have a bottom surface having any of a curved surface shape and a planar surface shape that faces the substrate and is configured to be distant from the substrate between the resin body and the substrate as a distance from the side surface of the light-emitting element increases.

Abstract: A semiconductor light-emitting device comprises an optical semiconductor multilayer disposed above a support substrate, which has a structure in which a first semiconductor layer having a first conductivity type, an active layer having light emitting properties, and a second semiconductor layer having a second conductivity type different from the first conductivity type are sequentially stacked from the support substrate side, in which a groove, which has a height exceeding at least the active layer from the support substrate side, is formed along an outer edge of the optical semiconductor multilayer, and which includes an external region being a region further outside than the groove, an inner region being a region further inside than the groove, and a connection region corresponding to a region where the groove is provided, in plan view.

Abstract: A semiconductor light-emitting device comprises an optical semiconductor multilayer disposed above a support substrate, which has a structure in which a first semiconductor layer having a first conductivity type, an active layer having light emitting properties, and a second semiconductor layer having a second conductivity type different from the first conductivity type are sequentially stacked from the support substrate side, in which a groove, which has a height exceeding at least the active layer from the support substrate side, is formed along an outer edge of the optical semiconductor multilayer, and which includes an external region being a region further outside than the groove, an inner region being a region further inside than the groove, and a connection region corresponding to a region where the groove is provided, in plan view.

Abstract: A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film.

Abstract: A semiconductor light emitting element array contains: a support substrate; a plurality of semiconductor light emitting elements disposed on said support substrate, a pair of adjacent semiconductor light emitting elements being separated by street, each of the semiconductor light emitting elements including; a first electrode formed on the support substrate, a semiconductor lamination formed on the first electrode and including a stack of a first semiconductor layer having a first conductivity type, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer, and having a second conductivity type different from the first conductivity type, and a second electrode selectively formed on the second semiconductor layer of the semiconductor lamination; and connection member having electrical insulating property and optically propagating property, disposed to cover at least part of the street between a pair of adjacent semiconductor laminations.

Abstract: In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions.

Abstract: Producing a semiconductor film containing a first semiconductor layer, an active layer, and a second semiconductor layer, each represented as AlxInyGazN, on a growth substrate, the layers arranged in this order from the growth substrate side. Producing a metal layer on the semiconductor film and/or a support and joining the semiconductor film and the support with the metal layer sandwiched between them. Irradiating the peripheral region of the growth substrate with a laser beam to separate the growth substrate from the semiconductor film in the peripheral region. Irradiating portions on the inner side of the peripheral region of the growth substrate with a laser beam, while leaving unirradiated portions, to separate and remove the growth substrate from the semiconductor film. Removing some portions of the semiconductor film where the growth substrate has already been separated and removed, to set up regions where semiconductor light emitting devices are to be produced.

Abstract: A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements.

Abstract: Producing a semiconductor film containing a first semiconductor layer, an active layer, and a second semiconductor layer, each represented as AlxInyGazN, on a growth substrate, the layers arranged in this order from the growth substrate side. Producing a metal layer on the semiconductor film and/or a support and joining the semiconductor film and the support with the metal layer sandwiched between them. Irradiating the peripheral region of the growth substrate with a laser beam to separate the growth substrate from the semiconductor film in the peripheral region. Irradiating portions on the inner side of the peripheral region of the growth substrate with a laser beam, while leaving unirradiated portions, to separate and remove the growth substrate from the semiconductor film. Removing some portions of the semiconductor film where the growth substrate has already been separated and removed, to set up regions where semiconductor light emitting devices are to be produced.

Abstract: A method of manufacturing semiconductor light emitting elements with improved yield and emission power uses laser lift-off and comprises the steps of forming a semiconductor grown layer formed of a first semiconductor layer, an active layer, and a second semiconductor layer on a first principal surface of a growth substrate; forming a plurality of junction electrodes apart on the second semiconductor layer and forming guide grooves arranged in a lattice to surround each of the junction electrodes in the second semiconductor layer; joining together a support and the semiconductor grown layer via the junction electrodes; projecting a laser to separate the growth substrate; dividing the semiconductor grown layer into respective element regions for the semiconductor light emitting elements; and cutting the support, thereby separating into the semiconductor light emitting elements.

Abstract: In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions.

Abstract: A method for manufacturing a catalytic stuff includes grinding the ore containing silica as main component, carbon, etc.; burning the powder object at high temperature after grinded the ore; emitting the carbon dioxide generated by combustion and churning of other substances which are sticking to silica during combustion of the powder object; and burning the remained catalytic stuff at high temperature again after carbon dioxide emits and manufacturing the catalytic stuff used for the mixed material with metal, filter medium of pollution water, propagation material etc. so that the tap water, the polluted water are improved efficient using the generated catalytic stuff, and it can be used broadly as water for home use, industrial use, agricultural use, and medical treatment, etc. and the balance of the body and cell can improve remarkably by holding the catalytic stuff since the generated catalytic stuff has the ultra-red ray effect etc.