Abstract: A door assembly allows one to easily and freely change a hinged side and an opening direction of a door when or after a resident moves into a house. Detachable inner frames having doorstop portions, flat portions, and locking nails are mounted to locking grooves in left and right vertical outer frames around spacers and a door main body is mounted to a heelpost side flat portion through hinges. By dividing a doorframe into the vertical outer frames and the inner frames, in order to change a hinged side of the door, the inner frames are pulled out from the vertical outer frames and inserted into the locking grooves in the vertical outer frames after changing orientation of the inner frames according to the hinged side or exchanging the inner frames for the inner frames suitable for the hinged side and the opening direction to thereby easily change the hinged side of the door main body.

Abstract: It is possible to easily and freely change a hinged side and an opening direction of a door when or after a resident moves into a house. Detachable inner frames having doorstop portions, flat portions, and locking nails are mounted to locking grooves in left and right vertical outer frames through spacers and a door main body is mounted to the heelpost side flat portion through hinges. By dividing a doorframe into vertical outer frames and inner frames, in order to change a hinged side of the door, inner frames are pulled out from the vertical outer frames and inserted into the locking grooves in the vertical outer frames after changing orientation of the inner frames according to the hinged side or exchanging the inner frames for inner frames suitable for the hinged side and the opening direction to thereby easily change the hinged side of the door main body.

Abstract: An active element has first and second regions and a control electrode. Carriers move between the first and second regions in a first direction. A motion of carriers is controlled by an electric signal applied to the control electrode. The first and second regions and control electrode extend in a second direction crossing the first direction from an input terminal to an output terminal. A conductive region is electrically connected to the first region from the input terminal to the output terminal. A trigger line extending in the second direction propagates an electric signal from the input terminal to the output terminal. The electric signal propagating the trigger line is applied to the control electrode at a corresponding position in the second direction. An output line extending in the second direction propagates an electric signal from the input terminal to the output terminal.

Abstract: A cold end and a hot end are demarcated in a first thermoelectric semiconductor member. A first member made from metal or a semiconductor is connected to the cold end of the first thermoelectric semiconductor member. The first member is made from a material wherein, heat absorption occurs when first carriers comprising either electrons or holes are injected from the first member into the first thermoelectric semiconductor member. The first carriers transported to the hot end of the first thermoelectric semiconductor member are gathered into a light-emitting region. The light-emitting region is made from a semiconductor material. In this light-emitting region, light emission due to recombination between electrons and holes occurs.

Abstract: A semiconductor device comprising a metal base providing a metal case and a through-passage connecting the inside and outside of said metal case, an electric terminal which provides a bridge selectively deposited on the insulator base allowing formation of conductive layer thereon, said insulator base and said conductive layer and is integrated with said insulator base and is insertingly engaged with the through-passage of said metal base, and a semiconductor element accommodated in said metal case, wherein a pseudo-coaxial line structure is composed of said conductive layer, insulator base, insulator bridge and metal case. Accordingly a device of the present invention is capable of stably operating even at a frequency of 10 GHz or higher.

Abstract: A semiconductor device including a metal base, a metal case and a through-passage connecting the inside and outside of the metal case, an electric terminal which provides a bridge selectively deposited on an insulator base allowing formation of conductive layer thereon. The insulator base and the conductive layer are integrated with the insulator base and the combination is insertingly engaged with the through-passage of the metal base. A semiconductor element is fixed in the metal case, in which a pseudo-coaxial line structure is formed by the conductive layer, the insulator base, the insulator bridge and the metal case. Accordingly a device of the present invention is capable of stably operating even at a frequency of 10 GHz or higher.

Abstract: A high frequency, hermetically-sealed, semiconductor device with the capability of being cascade-connected with corresponding devices in an advantageous manner. The device consists of a function element which includes at least one semiconductor and other circuit elements necessary for forming a functional amplifier, a DC power circuit for operating the device and high frequency circuits for connecting to corresponding high frequency devices. This device also consists of a metal base substrate, which is used for anchoring the device and mounting other parts of the device thereon, an insulating substrate having a plurality of independent metallized layers used as external contacts and a sealing part for hermetically sealing that part of the insulating substrate which mounts and encloses the function element.