Patents by Inventor Noritaka Ukiyo

Noritaka Ukiyo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9761406
    Abstract: A radiation tube includes an enclosure having an opening portion, an electron source disposed inside the enclosure, a target unit configured to generate radiation by being bombarded with electrons emitted from the electron source, and a front shield disposed on the opening portion and joined to the target unit. The front shield has a slit-shaped opening that shields some of the radiation radiated from the target unit. The radiation is radiated through the opening in the shape of a fan beam.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: September 12, 2017
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Koichi Takasaki, Noritaka Ukiyo, Osamu Taniguchi, Takao Ogura
  • Patent number: 9653252
    Abstract: Provided is an X-ray generating tube with improved withstand voltage property by a simple structure, the X-ray generating tube including a cathode connected to one opening of an insulating tube and an anode connected to the other opening, in which a resistive film having a lower sheet resistance value than that of the insulating tube is disposed on an outer periphery of the insulating tube, and the cathode and the anode are electrically connected to each other via the resistive film.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: May 16, 2017
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yoshihiro Yanagisawa, Yasue Sato, Noritaka Ukiyo, Kazuhiro Sando
  • Patent number: 9401259
    Abstract: Provided is a radiation generating tube in which an insulating tube is prevented from being damaged by heat generation of a target or an electron emitting source during drive. Extending portions extending along an outer periphery of an insulating tube are provided to a cathode and an anode, respectively, and the insulating tube is joined to the extending portions to enhance the strength of joint portions. At the same time, the insulating tube can be deformed easily by setting a tube wall thickness of the insulating tube at a central portion in a longitudinal direction to be smaller than a tube wall thickness of an opening end, and thus the concentration of thermal stress on the joint portions caused by an increase in temperature of the cathode and the anode is alleviated.
    Type: Grant
    Filed: June 2, 2014
    Date of Patent: July 26, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noritaka Ukiyo, Yasue Sato, Yoshihiro Yanagisawa, Kazuhiro Sando
  • Publication number: 20160086761
    Abstract: Provided is an X-ray generating tube with improved withstand voltage property by a simple structure, the X-ray generating tube including a cathode connected to one opening of an insulating tube and an anode connected to the other opening, in which a resistive film having a lower sheet resistance value than that of the insulating tube is disposed on an outer periphery of the insulating tube, and the cathode and the anode are electrically connected to each other via the resistive film.
    Type: Application
    Filed: December 3, 2015
    Publication date: March 24, 2016
    Inventors: Yoshihiro Yanagisawa, Yasue Sato, Noritaka Ukiyo, Kazuhiro Sando
  • Patent number: 9230774
    Abstract: Provided is an X-ray generating tube with improved withstand voltage property by a simple structure, the X-ray generating tube including a cathode connected to one opening of an insulating tube and an anode connected to the other opening, in which a resistive film having a lower sheet resistance value than that of the insulating tube is disposed on an outer periphery of the insulating tube, and the cathode and the anode are electrically connected to each other via the resistive film.
    Type: Grant
    Filed: April 22, 2014
    Date of Patent: January 5, 2016
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yoshihiro Yanagisawa, Yasue Sato, Noritaka Ukiyo, Kazuhiro Sando
  • Publication number: 20150162162
    Abstract: A radiation tube includes an enclosure having an opening portion, an electron source disposed inside the enclosure, a target unit configured to generate radiation by being bombarded with electrons emitted from the electron source, and a front shield disposed on the opening portion and joined to the target unit. The front shield has a slit-shaped opening that shields some of the radiation radiated from the target unit. The radiation is radiated through the opening in the shape of a fan beam.
    Type: Application
    Filed: December 4, 2014
    Publication date: June 11, 2015
    Inventors: Koichi Takasaki, Noritaka Ukiyo, Osamu Taniguchi, Takao Ogura
  • Patent number: 9029795
    Abstract: A radiation generating tube includes an electron emitting source configured to emit an electron beam; a target configured to generate radiation when the target is irradiated with the electron beam; a rear shield body having a tube-shaped electron passage with openings thereof at each end of the passage, and being located at the side of the electron emitting source with respect to the target, a first opening of the passage facing the electron emitting source and being separated from the electron emitting source, a second opening of the passage facing the target; and a brazing material joining the rear shield body with a peripheral edge of the target, at a position separated from the second opening. A closed space isolated from the electron passage is provided between the target and the rear shield body.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: May 12, 2015
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuhiro Sando, Noritaka Ukiyo, Yasue Sato, Yoshihiro Yanagisawa
  • Publication number: 20140369470
    Abstract: Provided is a radiation generating tube in which an insulating tube is prevented from being damaged by heat generation of a target or an electron emitting source during drive. Extending portions extending along an outer periphery of an insulating tube are provided to a cathode and an anode, respectively, and the insulating tube is joined to the extending portions to enhance the strength of joint portions. At the same time, the insulating tube can be deformed easily by setting a tube wall thickness of the insulating tube at a central portion in a longitudinal direction to be smaller than a tube wall thickness of an opening end, and thus the concentration of thermal stress on the joint portions caused by an increase in temperature of the cathode and the anode is alleviated.
    Type: Application
    Filed: June 2, 2014
    Publication date: December 18, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Noritaka Ukiyo, Yasue Sato, Yoshihiro Yanagisawa, Kazuhiro Sando
  • Publication number: 20140362974
    Abstract: Provided is an X-ray generating tube with improved withstand voltage property by a simple structure, the X-ray generating tube including a cathode connected to one opening of an insulating tube and an anode connected to the other opening, in which a resistive film having a lower sheet resistance value than that of the insulating tube is disposed on an outer periphery of the insulating tube, and the cathode and the anode are electrically connected to each other via the resistive film.
    Type: Application
    Filed: April 22, 2014
    Publication date: December 11, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Yoshihiro Yanagisawa, Yasue Sato, Noritaka Ukiyo, Kazuhiro Sando
  • Publication number: 20140203183
    Abstract: A radiation generating tube includes an electron emitting source configured to emit an electron beam; a target configured to generate radiation when the target is irradiated with the electron beam; a rear shield body having a tube-shaped electron passage with openings thereof at each end of the passage, and being located at the side of the electron emitting source with respect to the target, a first opening of the passage facing the electron emitting source and being separated from the electron emitting source, a second opening of the passage facing the target; and a brazing material joining the rear shield body with a peripheral edge of the target, at a position separated from the second opening. A closed space isolated from the electron passage is provided between the target and the rear shield body.
    Type: Application
    Filed: January 14, 2014
    Publication date: July 24, 2014
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kazuhiro Sando, Noritaka Ukiyo, Yasue Sato, Yoshihiro Yanagisawa
  • Patent number: 7175706
    Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
    Type: Grant
    Filed: February 21, 2003
    Date of Patent: February 13, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaki Mizutani, Shunichi Ishihara, Katsumi Nakagawa, Hiroshi Sato, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Yukiko Iwasaki
  • Publication number: 20060194417
    Abstract: A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm?3 to 5×1019 cm?3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.
    Type: Application
    Filed: October 10, 2003
    Publication date: August 31, 2006
    Applicant: Canon Kabushiki Kaisha
    Inventors: Shunichi Ishihara, Katsumi Nakagawa, Hiroshi Sato, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Yukiko Iwasaki, Masaki Mizutani
  • Patent number: 7022181
    Abstract: In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.
    Type: Grant
    Filed: December 14, 2001
    Date of Patent: April 4, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Masaki Mizutani
  • Patent number: 6953506
    Abstract: A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.
    Type: Grant
    Filed: October 18, 2001
    Date of Patent: October 11, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaaki Iwane, Tetsuro Saito, Tatsumi Shoji, Makoto Iwakami, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaki Mizutani
  • Patent number: 6951584
    Abstract: An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.
    Type: Grant
    Filed: February 12, 2003
    Date of Patent: October 4, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noritaka Ukiyo, Tetsuro Saito, Tatsumi Shoji, Makoto Iwakami, Takehito Yoshino, Shoji Nishida, Masaaki Iwane, Masaki Mizutani
  • Publication number: 20050124139
    Abstract: There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
    Type: Application
    Filed: February 21, 2003
    Publication date: June 9, 2005
    Inventors: Masaki Mizutani, Shunichi Ishihara, Katsumi Nakagawa, Hiroshi Sato, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Yukiko Iwasaki
  • Publication number: 20050087226
    Abstract: The method of arranging an electrode according to the present invention includes: arranging an electrode material (103) for forming a eutectic with silicon on a silicon base (101) having unevenness; heating the silicon base (101) at a temperature equal to or higher than a eutectic temperature of the silicon and the electrode material (103); and cooling the silicon base (101) to flatten the unevenness on a surface of the silicon base just under the arranged electrode material (103). The present invention can provide a method of arranging an electrode on an uneven surface, which is a simple method and enables mass-production, and more particularly a method of arranging an electrode on a surface of a solar cell which can realize high efficiency of the solar cell.
    Type: Application
    Filed: October 5, 2004
    Publication date: April 28, 2005
    Applicant: Canon Kabushiki Kaisha
    Inventors: Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Yukiko Iwasaki
  • Patent number: 6818104
    Abstract: In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).
    Type: Grant
    Filed: September 24, 2003
    Date of Patent: November 16, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yukiko Iwasaki, Shoji Nishida, Kiyofumi Sakaguchi, Noritaka Ukiyo
  • Patent number: 6802900
    Abstract: Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.
    Type: Grant
    Filed: December 20, 2001
    Date of Patent: October 12, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaaki Iwane, Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaki Mizutani
  • Patent number: 6802926
    Abstract: A method of producing a semiconductor thin film is provided. While a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. According to these methods, it is possible to peel the semiconductor thin film away from the substrate without damage and to hold the substrate without contamination.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: October 12, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaki Mizutani, Isao Tanikawa, Katsumi Nakagawa, Tatsumi Shoji, Noritaka Ukiyo, Yukiko Iwasaki