Abstract: A method for producing a hydrogel according to the present disclosure includes: (A1) a step of preparing an object to be treated including a water-soluble cellulose-based compound and water; (B1) a step of heating the object to be treated so as to separate water from the object to be treated; and (C1) a step of cooling the object to be treated that has acquired an increased content percentage of the cellulose-based compound through the treatment in step (B1), and a series of steps from step (B1) to step (C1) are repeated until the content percentage of the cellulose-based compound in the object to be treated reaches 10% by mass or more.

Abstract: Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.

Abstract: According to one aspect of the technique described herein, there is provided a technique including: forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes sequentially performing: (a) supplying source gas to a substrate accommodated in a reaction tube; (b) exhausting the source gas remaining in the reaction tube through an exhaust pipe connected to the reaction tube; (c) supplying a reactive gas reacting with the source gas to the substrate; and (d) exhausting the reactive gas remaining in the reaction tube through the exhaust pipe, wherein at least in (a) and (c), a temperature of the reaction tube is set to a first temperature lower than a thermal decomposition temperature of the source gas and higher than a condensation temperature of the source gas and a temperature of the exhaust pipe is set to a second temperature equal to or higher than the first temperature.

Abstract: A method of manufacturing a semiconductor device includes (a) under a first process condition, supplying a purge gas containing hydrogen and oxygen to a process chamber from which an oxide film adhering to an internal member is removed by a cleaning gas containing a halogen element and exhausting the purge gas from the process chamber; and (b) under a second process condition differing from the first process condition, supplying the purge gas to the process chamber and exhausting the purge gas from the process chamber after performing (a), wherein the first process condition is a process condition under which reactivity of the halogen element, which remains within the process chamber when the cleaning gas is supplied to the process chamber, with the purge gas is higher than reactivity of the halogen element with the purge gas under the second process condition.

Abstract: There is provided a technique that includes: a process chamber accommodating substrate; a storage tank including bottom portion having recess and wall portion and storing liquid precursor; a vaporizing part vaporizing the stored liquid precursor to generate precursor gas; a supply part supplying the generated precursor gas to the process chamber; a sensor disposed in the recess and detecting liquid level of the stored liquid precursor; a replenishment part replenishing the liquid precursor in the storage tank; and a controller controlling the supply part to supply the precursor gas to the process chamber to perform a substrate processing process for processing the substrate, and controlling, each time when the substrate processing process is performed a predetermined number of times, the replenishment part, based on the detected liquid level, to replenish the liquid precursor in the storage tank so that the liquid level becomes a predetermined level.

Abstract: Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500° C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.

Abstract: According to one aspect of the technique described herein, there is provided a technique including: forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes sequentially performing: (a) supplying source gas to a substrate accommodated in a reaction tube; (b) exhausting the source gas remaining in the reaction tube through an exhaust pipe connected to the reaction tube; (c) supplying a reactive gas reacting with the source gas to the substrate; and (d) exhausting the reactive gas remaining in the reaction tube through the exhaust pipe, wherein at least in (a) and (c), a temperature of the reaction tube is set to a first temperature lower than a thermal decomposition temperature of the source gas and higher than a condensation temperature of the source gas and a temperature of the exhaust pipe is set to a second temperature equal to or higher than the first temperature.

Abstract: There is provided a technique that includes: a process chamber accommodating substrate; a storage tank including bottom portion having recess and wall portion and storing liquid precursor; a vaporizing part vaporizing the stored liquid precursor to generate precursor gas; a supply part supplying the generated precursor gas to the process chamber; a sensor disposed in the recess and detecting liquid level of the stored liquid precursor; a replenishment part replenishing the liquid precursor in the storage tank; and a controller controlling the supply part to supply the precursor gas to the process chamber to perform a substrate processing process for processing the substrate, and controlling, each time when the substrate processing process is performed a predetermined number of times, the replenishment part, based on the detected liquid level, to replenish the liquid precursor in the storage tank so that the liquid level becomes a predetermined level.

Abstract: Provided is a technique for forming a film having a desired stress on a substrate. A method of manufacturing a semiconductor device includes: forming a film having a predetermined stress on a substrate by controlling a ratio of a thickness of a first film having compressive stress to a thickness of a second film having tensile stress by performing: (a) supplying an organic source gas containing a first element and a reactive gas containing a second element to the substrate to form the first film containing the first element and the second element; and (b) supplying an inorganic source gas containing the first element and the reactive gas to the substrate to form the second film containing the first element and the second element.

Abstract: A film is efficiently formed by sufficiently supplying a source gas to substrates accommodated in a process chamber, and the uniformity of a film formed on the substrates is improved. A method of a semiconductor device manufacturing includes (a) supplying a source gas to an upper region of a process chamber through a first gas supply hole disposed at a front end of a first nozzle disposed in a lower region of the process chamber where the source gas is not pyrolyzed; (b) supplying the source gas to substrates disposed in the lower region and a middle region of the process chamber through a plurality of second gas supply holes of a second nozzle; and (c) supplying a reactive gas to substrates disposed in the lower region, the middle region and the upper region of the process chamber through a plurality of third gas supply holes of a third nozzle.

Abstract: Provided is a technique for forming a film having a desired stress on a substrate. A method of manufacturing a semiconductor device includes: forming a film having a predetermined stress on a substrate by controlling a ratio of a thickness of a first film having compressive stress to a thickness of a second film having tensile stress by performing: (a) supplying an organic source gas containing a first element and a reactive gas containing a second element to the substrate to form the first film containing the first element and the second element; and (b) supplying an inorganic source gas containing the first element and the reactive gas to the substrate to form the second film containing the first element and the second element.

Abstract: A film is efficiently formed by sufficiently supplying a source gas to substrates accommodated in a process chamber, and the uniformity of a film formed on the substrates is improved. A method of a semiconductor device manufacturing includes (a) supplying a source gas to an upper region of a process chamber through a first gas supply hole disposed at a front end of a first nozzle disposed in a lower region of the process chamber where the source gas is not pyrolyzed; (b) supplying the source gas to substrates disposed in the lower region and a middle region of the process chamber through a plurality of second gas supply holes of a second nozzle; and (c) supplying a reactive gas to substrates disposed in the lower region, the middle region and the upper region of the process chamber through a plurality of third gas supply holes of a third nozzle.

Abstract: A method of manufacturing a semiconductor device includes (a) under a first process condition, supplying a purge gas containing hydrogen and oxygen to a process chamber from which an oxide film adhering to an internal member is removed by a cleaning gas containing a halogen element and exhausting the purge gas from the process chamber; and (b) under a second process condition differing from the first process condition, supplying the purge gas to the process chamber and exhausting the purge gas from the process chamber after performing (a), wherein the first process condition is a process condition under which reactivity of the halogen element, which remains within the process chamber when the cleaning gas is supplied to the process chamber, with the purge gas is higher than reactivity of the halogen element with the purge gas under the second process condition.

Abstract: A multi-layer hose having a multi-layer structure comprising an inner layer (I) made of a fluorocopolymer and an outer layer (II) made of a polyamide resin, wherein the fluorocopolymer constituting the inner layer (I) is a fluorocopolymer which comprises polymerized units (a) based on tetrafluoroethylene, polymerized units (b) based on ethylene and polymerized units (c) based on itaconic anhydride and/or citraconic anhydride, wherein the molar ratio of (a)/(b) is from 20/80 to 80/20 and the molar ratio of (c)/((a)+(b)) is from 1/10,000 to 5/100 and which has a volume flow rate of from 1 to 1,000 mm3/sec., and the polyamide resin constituting the outer layer (II) is polyamide 11 and/or polyamide 12, which satisfies a condition of (terminal amino group concentration)/(terminal carboxyl group concentration)>1.

Abstract: A nylon resin multi-layer pipe, excellent in adhesivity to a nylon resin joint, includes at least (A) a layer containing a copolymerized nylon and (B) a layer containing a nylon resin other than the copolymerized nylon of the layer (A). The surface in contact with the joint is the layer (A) containing a copolymerized nylon. An adhesion method is provided for adhering a nylon resin joint to the aforementioned nylon resin multi-layer pipe using a solvent adhesive.

Abstract: A multi-layer hose having a multi-layer structure comprising an inner layer (I) made of a fluorocopolymer and an outer layer (II) made of a polyamide resin, wherein the fluorocopolymer constituting the inner layer (I) is a fluorocopolymer which comprises polymerized units (a) based on tetrafluoroethylene, polymerized units (b) based on ethylene and polymerized units (c) based on itaconic anhydride and/or citraconic anhydride, wherein the molar ratio of (a)/(b) is from 20/80 to 80/20 and the molar ratio of (c)/((a)+(b)) is from 1/10,000 to 5/100 and which has a volume flow rate of from 1 to 1,000 mm3/sec., and the polyamide resin constituting the outer layer (II) is polyamide 11 and/or polyamide 12, which satisfies a condition of (terminal amino group concentration)/(terminal carboxyl group concentration)>1.

Abstract: A joint to be adhered to nylon resin moldings includes a copolymerized nylon or a composition comprising a copolymerized nylon or a copolymerized nylon blend and at least one of a nucleating agent and a lubricant. A method for adhering nylon resin moldings includes, adhering nylon resin moldings to the joint using a solvent adhesive. The joint and the solvent adhesive enable formation of an effective adhesive layer.

Abstract: A fuel pipe joint having excellent fuel permeation resistance, particularly a fuel pipe joint for use in automobiles, which can greatly reduce the amount of fuel permeated through the wall and exhibits excellent rigidity and fuel barrier property even at high temperatures, the fuel pipe joint using a joint material comprising a polyamide (nylon 9T) consisting of a dicarboxylic acid component and a diamine component, with 60 to 100 mol % of the dicarboxylic acid component being a terephthalic acid and 60 to 100 mol % of the diamine component being a diamine component selected from 1,9-nonanediamine and 2-methyl-1,8-octanediamine. The joint material preferably further comprises a reinforcement and/or an electrically conducting filler. The electrically conducting filler preferably has an aspect ratio of 50 or more and a short diameter of 0.5 nm to 10 &mgr;m.

Abstract: A hose for fuel having a laminated structure comprising an inner layer (A) made of a ethylene/tetrafluoroethylene copolymer adhesive to a polyamide resin and an outer layer (B) made of a polyamide resin, is formed. Such a hose for fuel is excellent in interlaminar adhesive strength and also excellent in antistatic properties and fuel permeation-preventing properties, and particularly, the dependency of the interlaminar adhesive strength on the take-up speed during the co-extrusion molding, is small.

Abstract: A nylon resin multi-layer pipe excellent in adhesivity to a nylon resin joint including at least (A) a layer containing a copolymerized nylon and (B) a layer containing a nylon resin other than the copolymerized nylon of the layer (A) wherein the surface in contact with the joint is the layer (A) containing a copolymerized nylon and an adhesion method for adhering a nylon resin joint to the aforementioned nylon resin multi-layer pipe using a solvent adhesive are described.