Patents by Inventor Noriyuki Kaneoka

Noriyuki Kaneoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190108969
    Abstract: The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can be adjusted with high precision. In order to achieve this objective, provided is a charged particle beam device comprising: a first charged particle column which serves as an irradiation optical signal; a deflector that deflects charged particles which have passed through the inside of the first charged particle column toward an object; and a second charged particle column which serves as an imaging optical system.
    Type: Application
    Filed: March 28, 2016
    Publication date: April 11, 2019
    Inventors: Tomohiko OGATA, Masaki HASEGAWA, Hisaya MURAKOSHI, Katsunori ONUKI, Noriyuki KANEOKA
  • Publication number: 20190079025
    Abstract: The purpose of the present invention is to provide a defect inspection device with which it is possible to detect a latent flaw with a high precision or at a high speed. In order to fulfill this purpose, this defect inspection device is provided with: a sample support member that supports a sample irradiated by an electron beam emitted from an electron source; a negative voltage applying power source for forming a retarding electric field in relation to the electron beam that irradiates the sample supported by the sample support member; an imaging element at which an image of electrons reflected without reaching the sample is formed via the retarding electric field; an ultraviolet light source that emits an ultraviolet light toward the sample; and a computation processing device that processes an image generated on the basis of a signal obtained by the imaging element.
    Type: Application
    Filed: March 16, 2016
    Publication date: March 14, 2019
    Inventors: Masaki HASEGAWA, Katsunori ONUKI, Noriyuki KANEOKA, Hisaya MURAKOSHI, Tomohiko OGATA
  • Patent number: 8779400
    Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve.
    Type: Grant
    Filed: June 25, 2013
    Date of Patent: July 15, 2014
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Hiroyasu Shichi, Satoshi Tomimatsu, Kaoru Umemura, Noriyuki Kaneoka, Koji Ishiguro
  • Publication number: 20130284593
    Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve.
    Type: Application
    Filed: June 25, 2013
    Publication date: October 31, 2013
    Inventors: Hiroyasu SHICHI, Satoshi TOMIMATSU, Kaoru UMEMURA, Noriyuki KANEOKA, Koji ISHIGURO
  • Patent number: 8481980
    Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.
    Type: Grant
    Filed: April 23, 2008
    Date of Patent: July 9, 2013
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Hiroyasu Shichi, Satoshi Tomimatsu, Kaoru Umemura, Noriyuki Kaneoka, Koji Ishiguro
  • Patent number: 8431891
    Abstract: An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.
    Type: Grant
    Filed: March 25, 2010
    Date of Patent: April 30, 2013
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Hiroyasu Shichi, Satoshi Tomimatsu, Noriyuki Kaneoka, Kaoru Umemura, Koji Ishiguro
  • Patent number: 7777183
    Abstract: A charged particle beam system, a sample processing method, and a semiconductor inspection system enable an accurate detection of a particle in a film without causing LMIS contamination and allow observation with an electron microscope quickly. A particle 65 causing a defect in a film 66 that has been detected with a separate optical inspection system is detected with an optical microscope 43 based on position information acquired by the separate optical inspection system. A sample 31 is processed with a nonmetal ion beam 22 so as to allow observation of the particle 65 with an electron microscope image or an ion microscope image, or ultimate analysis of the particle 65 with an EDX.
    Type: Grant
    Filed: August 6, 2007
    Date of Patent: August 17, 2010
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Noriyuki Kaneoka, Kaoru Umemura, Koji Ishiguro
  • Publication number: 20100176297
    Abstract: An ion beam processing apparatus includes an ion beam irradiation optical system that irradiate a rectangular ion beam to a sample held on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage on which a test piece, extracted from the sample by a probe, is mounted. An angle of irradiation of the ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.
    Type: Application
    Filed: March 25, 2010
    Publication date: July 15, 2010
    Inventors: Hiroyasu Shichi, Satoshi Tomimatsu, Noriyuki Kaneoka, Kaoru Umemura, Koji Ishiguro
  • Patent number: 7700931
    Abstract: The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage.
    Type: Grant
    Filed: February 13, 2007
    Date of Patent: April 20, 2010
    Assignee: Hitachi High-Tchnologies Corporation
    Inventors: Hiroyasu Shichi, Satoshi Tomimatsu, Noriyuki Kaneoka, Kaoru Umemura, Koji Ishiguro
  • Patent number: 7696496
    Abstract: The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: April 13, 2010
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Satoshi Tomimatsu, Hiroyasu Shichi, Noriyuki Kaneoka, Kaoru Umemura, Koji Ishiguro
  • Patent number: 7592606
    Abstract: Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam column 1 that is connected to a vacuum vessel 10 and irradiates a sample 35 with an ion beam 11 of nonmetal ion species, a microsampling unit 3 having a probe 16 that extracts a microsample 43 cut out from a sample 35 by the ion beam 11, a gas gun 2 that discharges a gas for bonding the microsample 43 and the probe 16, a pollution measuring beam column 6A that is connected to the same vacuum vessel 10 to which the ion beam column 1 is connected and irradiates an ion beam irradiation traces by the ion beam column 1 with a pollution measuring beam 13, and a detector 7 that detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam column 1 upon irradiation with the pollution measuring beam 13.
    Type: Grant
    Filed: July 18, 2007
    Date of Patent: September 22, 2009
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Koji Ishiguro, Kaoru Umemura, Noriyuki Kaneoka
  • Publication number: 20090230299
    Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.
    Type: Application
    Filed: April 23, 2008
    Publication date: September 17, 2009
    Inventors: Hiroyasu Shichi, Satoshi Tomimatsu, Kaoru Umemura, Noriyuki Kaneoka, Koji Ishiguro
  • Publication number: 20080283778
    Abstract: The apparatus for ion beam fabrication, which has been able to detect any anomalous condition of ion beams only by means of the current irradiated on the specimen, could not compensate the failure by investigating the cause and could not realize stable processing. To solve the problem described above, the present invention includes the first and second blankers and Faraday cups switches ON and OFF the first and second blankers and monitors beam current at two positions above and below the projection mask. By adopting this configuration, it will be possible to acquire the information on failure in ion beam, sort out the cause of the failure and to compensate the failure while limiting damages to the projection mask. As a result, it will be possible to realize stable processing by means of ion beam, and to use the ion beam fabricating device on a stable basis.
    Type: Application
    Filed: December 20, 2007
    Publication date: November 20, 2008
    Inventors: Satoshi Tomimatsu, Hiroyasu Shichi, Noriyuki Kaneoka, Kaoru Umemura, Koji Ishiguro
  • Publication number: 20080073582
    Abstract: The present invention provides an ion beam processing technology for improving the precision in processing a section of a sample using an ion beam without making a processing time longer than a conventionally required processing time, and for shortening the time required for separating a micro test piece without breaking the sample or the time required for making preparations for the separation. An ion beam processing apparatus is structured so that an axis along which an ion beam is drawn out of an ion source and an ion beam irradiation axis along which the ion beam is irradiated to a sample mounted on a first sample stage will meet at an angle. Furthermore, the ion beam processing apparatus has a tilting ability to vary an angle of irradiation, at which the ion beam is irradiated to the sample, by rotating a second sample stage, on which a test piece extracted from the sample by performing ion beam processing is mounted, about the tilting axis of the second sample stage.
    Type: Application
    Filed: February 13, 2007
    Publication date: March 27, 2008
    Inventors: Hiroyasu Shichi, Satoshi Tomimatsu, Noriyuki Kaneoka, Kaoru Umemura, Koji Ishiguro
  • Publication number: 20080029699
    Abstract: A charged particle beam system, a sample processing method, and a semiconductor inspection system enable an accurate detection of a particle in a film without causing LMIS contamination and allow observation with an electron microscope quickly. A particle 65 causing a defect in a film 66 that has been detected with a separate optical inspection system is detected with an optical microscope 43 based on position information acquired by the separate optical inspection system. A sample 31 is processed with a nonmetal ion beam 22 so as to allow observation of the particle 65 with an electron microscope image or an ion microscope image, or ultimate analysis of the particle 65 with an EDX.
    Type: Application
    Filed: August 6, 2007
    Publication date: February 7, 2008
    Applicant: Hitachi High- Technologies Corporation
    Inventors: Noriyuki KANEOKA, Kaoru Umemura, Koji Ishiguro
  • Publication number: 20080018460
    Abstract: Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam column 1 that is connected to a vacuum vessel 10 and irradiates a sample 35 with an ion beam 11 of nonmetal ion species, a microsampling unit 3 having a probe 16 that extracts a microsample 43 cut out from a sample 35 by the ion beam 11, a gas gun 2 that discharges a gas for bonding the microsample 43 and the probe 16, a pollution measuring beam column 6A that is connected to the same vacuum vessel 10 to which the ion beam column 1 is connected and irradiates an ion beam irradiation traces by the ion beam column 1 with a pollution measuring beam 13, and a detector 7 that detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam column 1 upon irradiation with the pollution measuring beam 13.
    Type: Application
    Filed: July 18, 2007
    Publication date: January 24, 2008
    Applicant: Hitachi High-Technologies Corporation
    Inventors: Koji Ishiguro, Kaoru Umemura, Noriyuki Kaneoka
  • Publication number: 20070158560
    Abstract: Provided is a technique for accurately taking out a defect detected by an electron beam, and for analyzing the defect. In this technique, a defective portion in a wafer is detected by the irradiation of the electron beam. A mark made of a deposition layer is formed by irradiating the electron beam onto the defective portion while supplying a deposition gas thereto. On the basis of this mark, the defective portion is machined into a sample piece by using a projection ion beam generated from a gas ion source, and thereby the defective portion is taken out.
    Type: Application
    Filed: December 28, 2006
    Publication date: July 12, 2007
    Inventors: Noriyuki Kaneoka, Kaoru Umemura, Koji Ishiguro
  • Publication number: 20060284115
    Abstract: A technique is provided which can precisely form a deposition pile in a hole bored in the surface of a specimen. In ion beam apparatus and analysis method, the specimen surface is bored or a deposition pile is formed in the hole bored in the specimen surface. A measuring instrument is provided for measuring a height of the hole bored in the specimen surface or a height of the deposition pile formed in the hole. During fabrication of boring the hole in the specimen surface or fabrication of filling the hole bored in the specimen surface, an image of an area encompassing the hole and the depth of the hole or the height of the deposition pile are displayed.
    Type: Application
    Filed: May 24, 2006
    Publication date: December 21, 2006
    Inventors: Noriyuki Kaneoka, Kaoru Umemura, Koji Ishiguro, Hiroyasu Shichi, Satoshi Tomimatsu
  • Patent number: 6094647
    Abstract: A method for making document information searches. In performing a document search with respect to the desired key word, two stages of presearch are carried out. In a first stage of presearch, a character component table in which an existence of character codes for every document is stated with respect to all the character codes contained in the group of document text data of stored documents is generated, and the character component table is searched for all the character strings constituting a desiredly designated search subject key word to thereby extract all the documents each containing all the character codes constituting the search subject key word. In a second stage of presearch, contracted text data for every document in which adjuncts and duplication of repeatedly stated words contained in advance in the text data are eliminated is generated, and the documents each containing the search subject key words by word are extracted from the documents extracted by the first presearch.
    Type: Grant
    Filed: April 11, 1997
    Date of Patent: July 25, 2000
    Assignee: Hitachi, Ltd.
    Inventors: Kanji Kato, Hiromichi Fujisawa, Mitsuo Ooyama, Hisamitsu Kawaguchi, Atsushi Hatakeyama, Noriyuki Kaneoka, Mitsuru Akizawa, Masaaki Fujinawa, Hidefumi Masuzaki, Masaharu Murakami
  • Patent number: 5659174
    Abstract: A sample is scanned with a focused electron beam so that secondary particles characteristic of the sample are generated therefrom and the generated particles are detected by a detector so as to be converted into an electric signal. The electric signal is converted into digital image data, which are stored in a image memory. The stored image data are displayed on a display along with digital SEM operating picture data stored in a memory of a personal computer. An operating signal generated by an input device is conducted to not only the personal computer but also an input control unit, which converts the operating signal into a control signal. This control signal is used to change a parameter associated with the image data, i.e., for example, to control focusing of the electron beam.
    Type: Grant
    Filed: April 5, 1996
    Date of Patent: August 19, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Noriyuki Kaneoka, Kaneo Kageyama, Atushi Mouri, Junji Takada