Patents by Inventor Noriyuki Yokouchi

Noriyuki Yokouchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210135422
    Abstract: An optical power transmission apparatus includes: a light emitting unit including a first optical gain generating means and a first light reflecting means; an optical fiber; a second light reflecting means; and a light receiving means. Further, the second light reflecting means is arranged nearer to the light receiving means than the optical fiber is, a first laser resonator is formed, between the first light reflecting means and the second light reflecting means, by optical connection between the first optical gain generating means and the optical fiber, and first laser light generated by the first laser resonator is configured to be incident on the light receiving means.
    Type: Application
    Filed: January 14, 2021
    Publication date: May 6, 2021
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Noriyuki YOKOUCHI, Kengo WATANABE
  • Patent number: 9912122
    Abstract: A semiconductor optical device includes an active layer, the active layer including a plurality of quantum well layers having gain peak wavelengths different from one another in a layering direction thereof, and a plurality of barrier layers, wherein the quantum well layers and the barrier layers are alternately layered over each other, and an n-type dopant has been added in the plurality of quantum well layers having gain peak wavelengths different from one another and in the plurality of barrier layers.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: March 6, 2018
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Yasumasa Kawakita, Noriyuki Yokouchi
  • Publication number: 20170353011
    Abstract: A semiconductor optical device includes an active layer, the active layer including a plurality of quantum well layers having gain peak wavelengths different from one another in a layering direction thereof, and a plurality of barrier layers, wherein the quantum well layers and the barrier layers are alternately layered over each other, and an n-type dopant has been added in the plurality of quantum well layers having gain peak wavelengths different from one another and in the plurality of barrier layers.
    Type: Application
    Filed: August 22, 2017
    Publication date: December 7, 2017
    Applicant: Furukawa Electric Co., LTD.
    Inventors: Yasumasa Kawakita, Noriyuki Yokouchi
  • Patent number: 9711945
    Abstract: A method of designing a semiconductor laser device includes: controlling a distance between the output-side reflection unit and the second reflection unit and an effective optical feedback ? to the semiconductor laser element, the effective optical feedback ? defined by a below-presented formula (1) including a circulating time ? of the light in the semiconductor laser element, a reflectivity R1 of the output-side reflection unit, and a reflectivity R2 of the second reflection unit; selecting a semiconductor laser device in which an LFF period is equal to or smaller than 20 ns as a semiconductor laser device in which high speed switching occurs between an FBG mode and an FP mode; and using the selected semiconductor laser device as an semiconductor laser device oscillating in a coherent collapse mode.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: July 18, 2017
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hideaki Hasegawa, Noriyuki Yokouchi, Taketsugu Sawamura, Satoshi Irino, Junji Yoshida
  • Publication number: 20160285237
    Abstract: A method of designing a semiconductor laser device includes: controlling a distance between the output-side reflection unit and the second reflection unit and an effective optical feedback ? to the semiconductor laser element, the effective optical feedback ? defined by a below-presented formula (1) including a circulating time ? of the light in the semiconductor laser element, a reflectivity R1 of the output-side reflection unit, and a reflectivity R2 of the second reflection unit; selecting a semiconductor laser device in which an LFF period is equal to or smaller than 20 ns as a semiconductor laser device in which high speed switching occurs between an FBG mode and an FP mode; and using the selected semiconductor laser device as an semiconductor laser device oscillating in a coherent collapse mode.
    Type: Application
    Filed: June 8, 2016
    Publication date: September 29, 2016
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hideaki HASEGAWA, Noriyuki YOKOUCHI, Taketsugu SAWAMURA, Satoshi IRINO, Junji YOSHIDA
  • Patent number: 9054486
    Abstract: An optical amplifier device comprising an input/output section that inputs incident light and outputs emission light; a polarized light splitting section that causes a polarized light component of the incident light input from the input/output section to branch, and outputs first polarization mode light having a first polarization and second polarization mode light having a second polarization different from the first polarization; a polarization converting section that receives the first polarization mode light, converts the first polarization to the second polarization, and outputs first polarization converted light; and an optical amplifying section that amplifies the first polarization converted light input to one end of a waveguide, outputs the resulting amplified first polarization converted light from another end of the waveguide, amplifies the second polarization mode light input to the other end of the waveguide, and outputs the resulting amplified second polarization mode light from the one end of t
    Type: Grant
    Filed: November 25, 2013
    Date of Patent: June 9, 2015
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hideaki Hasegawa, Masaki Funabashi, Kazuaki Kiyota, Takeshi Akutsu, Noriyuki Yokouchi, Kazutaka Nara
  • Patent number: 8837869
    Abstract: The invention of the present application provides an SOA-PLC hybrid integrated polarization diversity circuit including a PLC-PBS chip and an SOA-COS whose respective waveguides are coupled to each other. The PLC-PBS chip includes: first and second optical waveguides; a Mach-Zehnder interferometer circuit; and a half-wave plate placed in the first optical waveguide which TM mode light is split into. The SOA-COS includes: a third optical waveguide connected to the first optical waveguide; a fourth optical waveguide connected to the second optical waveguide; and an SOA formed in at least one of the third and fourth optical waveguides. One end of the third optical waveguide and one end of the fourth optical waveguide are connected to a U-turn optical waveguide, the one ends being not connected to the first optical waveguide and the second optical waveguide, respectively.
    Type: Grant
    Filed: January 7, 2013
    Date of Patent: September 16, 2014
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Takeshi Akutsu, Kazutaka Nara, Masaki Funabashi, Noriyuki Yokouchi, Hideaki Hasegawa
  • Publication number: 20140078580
    Abstract: An optical amplifier device comprising an input/output section that inputs incident light and outputs emission light; a polarized light splitting section that causes a polarized light component of the incident light input from the input/output section to branch, and outputs first polarization mode light having a first polarization and second polarization mode light having a second polarization different from the first polarization; a polarization converting section that receives the first polarization mode light, converts the first polarization to the second polarization, and outputs first polarization converted light; and an optical amplifying section that amplifies the first polarization converted light input to one end of a waveguide, outputs the resulting amplified first polarization converted light from another end of the waveguide, amplifies the second polarization mode light input to the other end of the waveguide, and outputs the resulting amplified second polarization mode light from the one end of t
    Type: Application
    Filed: November 25, 2013
    Publication date: March 20, 2014
    Applicant: FURUKAWA ELECTRIC CO., LTD
    Inventors: Hideaki HASEGAWA, Masaki FUNABASHI, Kazuaki KIYOTA, Takeshi AKUTSU, Noriyuki YOKOUCHI, Kazutaka NARA
  • Patent number: 8547631
    Abstract: It is desirable to provide a semiconductor optical amplifier from which it becomes able to obtain a higher output power. A semiconductor optical amplifier in comprises an active wave guiding layer which comprises a passive core region that is formed of a semiconductor, and active cladding regions that are located at both sides of the passive core region and each of that is comprised of an active layer which is formed of a semiconductor and which has an index of refraction to be lower than that of the passive core region, wherein a light is wave guided with being amplified in the active wave guiding layer. Moreover, it is desirable for the active wave guiding layer to be formed of a compound semiconductor, and to be formed by integrating the passive core region and the active cladding regions to be monolithic on to a substrate that is formed of a compound semiconductor by making use of a process of a butt joint growth.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: October 1, 2013
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Hideaki Hasegawa, Masaki Funabashi, Noriyuki Yokouchi, Junji Yoshida
  • Patent number: 7885312
    Abstract: A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.
    Type: Grant
    Filed: July 31, 2008
    Date of Patent: February 8, 2011
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Tomofumi Kise, Noriyuki Yokouchi
  • Patent number: 7881359
    Abstract: A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film.
    Type: Grant
    Filed: April 15, 2008
    Date of Patent: February 1, 2011
    Assignee: The Furukawa Electric Co., Ltd
    Inventors: Noriyuki Yokouchi, Norihiro Iwai
  • Publication number: 20100245987
    Abstract: It is desirable to provide a semiconductor optical amplifier from which it becomes able to obtain a higher output power. A semiconductor optical amplifier in comprises an active wave guiding layer which comprises a passive core region that is formed of a semiconductor, and active cladding regions that are located at both sides of the passive core region and each of that is comprised of an active layer which is formed of a semiconductor and which has an index of refraction to be lower than that of the passive core region, wherein a light is wave guided with being amplified in the active wave guiding layer. Moreover, it is desirable for the active wave guiding layer to be formed of a compound semiconductor, and to be formed by integrating the passive core region and the active cladding regions to be monolithic on to a substrate that is formed of a compound semiconductor by making use of a process of a butt joint growth.
    Type: Application
    Filed: February 18, 2010
    Publication date: September 30, 2010
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hideaki Hasegawa, Masaki Funabashi, Noriyuki Yokouchi, Junji Yoshida
  • Publication number: 20100111468
    Abstract: An optical integrated circuit includes a planar lightwave circuit, and a semiconductor element, which are fixed at one contact surface. A semiconductor optical amplifier (SOA) and a turnaround waveguide having a turnaround portion are formed on a semiconductor substrate. The turnaround waveguide is turned around on the second substrate and is connected to an output port of the SOA. An input port and an output port of the turnaround waveguide are optically coupled at the contact surface with an input port and an output port of the optical waveguides respectively.
    Type: Application
    Filed: June 10, 2009
    Publication date: May 6, 2010
    Applicant: THE FURUKAWA ELECTRIC CO., LTD.
    Inventors: Masaki FUNABASHI, Junichi Hasegawa, Takeshi Akutsu, Kazutaka Nara, Noriyuki Yokouchi
  • Patent number: 7618201
    Abstract: An optical-waveguide device mounted on a fixing member having a pair of opposing upright walls and a sub-mount unit including a metallic sub-mount of a rectangular solid shape inserted between the opposing upright walls and a nonmetallic sub-mount of a rectangular solid shape mounted on the metallic sub-mount, and fixed onto a base table. The fixing member and the sub-mount unit as well as the fixing member and the base table are spot-welded together using YAG welding.
    Type: Grant
    Filed: March 22, 2007
    Date of Patent: November 17, 2009
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Sayoko Ibe, Noriyuki Yokouchi, Kengo Muranushi, Tatsuya Kimoto, Tatsuro Kurobe
  • Patent number: 7564563
    Abstract: A laser gyro of the present invention includes laser light excitation means (a semiconductor laser device 100) that excites first and second laser lights propagating in the opposite directions to each other in a circular ring-shaped path (an optical path 40), coupling means (optical waveguides 41 and 42) for superimposing the first and the second laser lights, and a photodetector for observing an interference signal generated by the superimposed first and second laser lights.
    Type: Grant
    Filed: May 31, 2007
    Date of Patent: July 21, 2009
    Assignees: Advanced Telecommunications Research Institute International, The Furukawa Electric Co., Ltd.
    Inventors: Noriyuki Yokouchi, Junji Yoshida, Takahisa Harayama, Takehiro Fukushima, Akihiko Kasukawa, Shuichi Tamura, Keizou Inagaki, Morito Matsuoka
  • Publication number: 20090180509
    Abstract: A surface emitting semiconductor laser comprises a semiconductor substrate; a lamination structure including a lower multilayer film reflecting mirror, an active layer, and an upper multilayer film reflecting mirror formed on the semiconductor substrate; and an upper electrode and a lower electrode for supplying an electric power to the active layer. The upper multilayer film reflecting mirror has a refractive index having a two-dimensional periodic distribution within a lamination plane except a predetermined region in the lamination plane.
    Type: Application
    Filed: January 8, 2009
    Publication date: July 16, 2009
    Inventors: Tomofumi Kise, Noriyuki Yokouchi
  • Patent number: 7561765
    Abstract: An optical integrated circuit 1 according to the present invention includes a planar lightwave circuit 2, and a semiconductor element 3, which are fixed at one contact surface 12. A semiconductor optical amplifier (SOA) 9 is formed on a semiconductor substrate 8. A semiconductor waveguide 10 and a semiconductor waveguide 11 are formed on an input side and an output side of SOA 9, respectively. The semiconductor waveguide 11 has a turnaround portion 11a turned around on the semiconductor substrate 8. Respective ends of the optical waveguides 5 and 6 on a PLC platform 4 and respective ends of semiconductor waveguides 10 and 11 are optically coupled with each other at the contact surface 12.
    Type: Grant
    Filed: March 10, 2008
    Date of Patent: July 14, 2009
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Masaki Funabashi, Junichi Hasegawa, Takeshi Akutsu, Kazutaka Nara, Noriyuki Yokouchi
  • Publication number: 20090168829
    Abstract: A vertical-cavity surface-emitting laser (VCSEL) includes a substrate, and a layer structure including a first reflector, an active layer, and a second reflector, which are consecutively layered on the substrate, and a plurality of holes arranged in a two-dimensional structure periodically within a layer plane except for a specified area of the layer structure, wherein a pair of holes sandwiching therebetween the specific area and opposing each other have a dimension or shape different from the dimension or shape of others of the holes.
    Type: Application
    Filed: December 23, 2008
    Publication date: July 2, 2009
    Applicant: The Furukawa Electric Co., Ltd.
    Inventors: Tomofumi KISE, Noriyuki Yokouchi
  • Patent number: 7525726
    Abstract: To provide a photonic crystal semiconductor device which enables various kinds of optical devices having a photonic crystal structure which is readily formed using a semiconductor and a semiconductor manufacturing process, and a manufacturing method thereof. The object can be achieved by a photonic crystal structure, including a lower DBR layer 1, a core layer 2, an upper DBR layer 3, and a dielectric multilayer film 6 which are sequentially laminated from an n-InP substrate 11 side, a plurality of holes 9 formed in the direction of a film thickness in the core layer 2 and the upper DBR layer 3, and a line defect portion 10 with none of the plurality of holes formed therein and disposed between the plurality of holes 9, wherein the line defect portion 10 serves as an optical waveguide.
    Type: Grant
    Filed: August 17, 2006
    Date of Patent: April 28, 2009
    Assignees: The Furukawa Electric Co., Ltd., Toshihiko BABA
    Inventors: Tomofumi Kise, Tatsuya Kimoto, Noriyuki Yokouchi, Toshihiko Baba
  • Publication number: 20080298420
    Abstract: A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser.
    Type: Application
    Filed: July 31, 2008
    Publication date: December 4, 2008
    Inventors: Tomofumi Kise, Noriyuki Yokouchi