Patents by Inventor Norman L. Turner
Norman L. Turner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7897943Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: GrantFiled: January 27, 2006Date of Patent: March 1, 2011Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Patent number: 7888660Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: GrantFiled: January 27, 2006Date of Patent: February 15, 2011Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Patent number: 7829866Abstract: A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.Type: GrantFiled: August 13, 2008Date of Patent: November 9, 2010Inventors: Kenneth H. Purser, Norman L. Turner
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Publication number: 20080302972Abstract: A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.Type: ApplicationFiled: August 13, 2008Publication date: December 11, 2008Inventors: Kenneth H. Purser, Norman L. Turner
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Patent number: 7439526Abstract: The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.Type: GrantFiled: December 20, 2005Date of Patent: October 21, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kenneth H. Purser, Norman L. Turner
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Patent number: 7414249Abstract: A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.Type: GrantFiled: November 30, 2005Date of Patent: August 19, 2008Inventors: Kenneth H. Purser, Norman L. Turner
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Patent number: 7365340Abstract: The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields.Type: GrantFiled: July 20, 2005Date of Patent: April 29, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kenneth H. Purser, Albert E. Litherland, Norman L. Turner
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Patent number: 7351984Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: GrantFiled: April 5, 2007Date of Patent: April 1, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Patent number: 7301156Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: GrantFiled: June 16, 2005Date of Patent: November 27, 2007Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Patent number: 6933507Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: GrantFiled: July 15, 2003Date of Patent: August 23, 2005Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Patent number: 6881305Abstract: The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining at portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.Type: GrantFiled: November 6, 2001Date of Patent: April 19, 2005Assignee: Applied Materials, Inc.Inventors: Russell Black, Norman L. Turner, Ernest Demaray
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Publication number: 20040149926Abstract: Methods and apparatus are disclosed for rapidly providing for a large number of closely spaced points within an area at right angle to the central trajectory of an ion beam data concerning intensity variations, emittance variations and angular variations of elementary beamlets with respect to the central beam trajectory. The technology is particular applicable to the application and control of ribbon beams used for semiconductor implantation.Type: ApplicationFiled: December 11, 2003Publication date: August 5, 2004Inventors: Kenneth H. Purser, Carl J. Russo, Norman L. Turner
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Patent number: 6746198Abstract: The present invention provides an apparatus and method for substrate transport. In systems according to the invention, at least a first and second chamber are provided. The first chamber may be a load lock and the second chamber a processing chamber. A substrate transfer shuttle is provided and is moveable along a linear path defined by guide rollers between one position in the first chamber and another position in the second chamber. In this way, the substrate may be transferred, in both a forward and a reverse direction, between the first chamber and the second chamber. The substrate transfer shuttle is structured so that a substrate may be removed therefrom by moving a support in one of the chambers from a lowered position to an intermediate position, after which the substrate transfer shuttle may be removed from the chamber.Type: GrantFiled: June 13, 2001Date of Patent: June 8, 2004Assignee: Applied Materials, Inc.Inventors: John M. White, Norman L. Turner, Robin L. Tiner, Ernst Keller, Shinichi Kurita, Wendell T. Blonigan, David E. Berkstresser
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Publication number: 20040097058Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: ApplicationFiled: July 15, 2003Publication date: May 20, 2004Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Patent number: 6688375Abstract: The invention is directed a vacuum processing system having improved substrate heating and cooling facilities. An evacuable chamber of the system includes a first section in which a temperature of a substrate to be processed may be increased and a second section in which the temperature of a processed substrate may be decreased. A barrier may be provided to thermally isolate the first and second sections from each other.Type: GrantFiled: October 14, 1997Date of Patent: February 10, 2004Assignee: Applied Materials, Inc.Inventors: Norman L. Turner, John M. White, Alan D'Entremont
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Publication number: 20030197133Abstract: An apparatus for controlling the motion of a workpiece in a vacuum chamber. The work piece is supported in vacuum on a pedestal or platen, containing an electrostatic chuck for holding and clamping the workpiece.Type: ApplicationFiled: April 18, 2003Publication date: October 23, 2003Inventors: Norman L. Turner, Kenneth H. Purser
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Publication number: 20030190220Abstract: The present invention provides an apparatus and method for substrate transport. In systems according to the invention, at least a first and second chamber are provided. The first chamber may be a load lock and the second chamber a processing chamber. A substrate transfer shuttle is provided and is moveable along a linear path defined by guide rollers between one position in the first chamber and another position in the second chamber. In this way, the substrate may be transferred, in both a forward and a reverse direction, between the first chamber and the second chamber. The substrate transfer shuttle is structured so that a substrate may be removed therefrom by moving a support in one of the chambers from a lowered position to an intermediate position, after which the substrate transfer shuttle may be removed from the chamber.Type: ApplicationFiled: June 13, 2001Publication date: October 9, 2003Applicant: Applied Komatsu Technology, IncInventors: John M. White, Norman L. Turner, Robin L. Tiner, Ernst Keller, Shinichi Kurita, Wendell T. Blonigan, David E. Berkstresser
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Patent number: 6517303Abstract: The present invention provides an apparatus and method for substrate transport. In systems according to the invention, at least a first and second chamber are provided. The first chamber may be a load lock and the second chamber a processing chamber. A substrate transfer shuttle is provided and is moveable along a linear path defined by guide rollers between one position in the first chamber and another position in the second chamber. In this way, the substrate may be transferred, in both a forward and a reverse direction, between the first chamber and the second chamber. The substrate transfer shuttle is structured so that a substrate may be removed therefrom by moving a support in one of the chambers from a lowered position to an intermediate position, after which the substrate transfer shuttle may be removed from the chamber.Type: GrantFiled: May 20, 1998Date of Patent: February 11, 2003Assignee: Applied Komatsu Technology, Inc.Inventors: John M. White, Norman L. Turner, Robin L. Tiner, Ernst Keller, Shinichi Kurita, Wendell T. Blonigan, David E. Berkstresser
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Publication number: 20020108571Abstract: The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining a portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.Type: ApplicationFiled: November 6, 2001Publication date: August 15, 2002Inventors: Russell Black, Norman L. Turner, Ernest Demaray
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Patent number: 6432203Abstract: The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining a portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.Type: GrantFiled: January 9, 1998Date of Patent: August 13, 2002Assignee: Applied Komatsu Technology, Inc.Inventors: Russell Black, Norman L. Turner, Ernest Demaray