Abstract: The present disclosure relates to a metal particle-containing composition contains at least one thermosetting resin (R), a hardening agent (H), and at least three types of metal particles (P) different from one another. The metal particles (P) contain a solder alloy particle (P1) containing a tin alloy containing at least one metal (A), wherein the metal (A) is a metal that forms a eutectic crystal with tin at a eutectic temperature of 200° C. or lower, at least one metal particle (P2) containing a metal (B) having a melting point exceeding 420° C. in a bulk, the metal particle (P2) having a melting point higher than a solidus temperature of the solder alloy particle (P1), and at least one metal particle (P3) containing a metal (C) that forms an intermetallic compound with a metal contained in the solder alloy particle (P1).

Abstract: A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

Abstract: A joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. A joining film for joining a semiconductor element and a substrate includes an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element and the substrate are joined.

Abstract: The present disclosure relates to a metal particle-containing composition contains at least one thermosetting resin (R), a hardening agent (H), and at least three types of metal particles (P) different from one another. The metal particles (P) contain a solder alloy particle (P1) containing a tin alloy containing at least one metal (A), wherein the metal (A) is a metal that forms a eutectic crystal with tin at a eutectic temperature of 200° C. or lower, at least one metal particle (P2) containing a metal (B) having a melting point exceeding 420° C. in a bulk, the metal particle (P2) having a melting point higher than a solidus temperature of the solder alloy particle (P1), and at least one metal particle (P3) containing a metal (C) that forms an intermetallic compound with a metal contained in the solder alloy particle (P1).

Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film for joining a semiconductor element and a substrate, the joining film having an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer are sintered, and thereby the semiconductor element and the substrate are joined.

Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.

Abstract: The invention provides a joining film that can enhance the mechanical strength and thermal cycle characteristics in a semiconductor device produced by joining a semiconductor element and a substrate, and a tape for wafer processing. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a having a reinforcing layer formed from a porous body or a reticulate body, the pores or meshes of the porous body or the reticulate body being filled with an electroconductive paste containing metal fine particles (p).

Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.