Patents by Inventor Norzafriza NITTA

Norzafriza NITTA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220139864
    Abstract: A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.
    Type: Application
    Filed: January 13, 2022
    Publication date: May 5, 2022
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Norzafriza NITTA, Hidemichi FUJIWARA, Yoshihiro SATO
  • Publication number: 20210348038
    Abstract: A joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. A joining film for joining a semiconductor element and a substrate includes an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element and the substrate are joined.
    Type: Application
    Filed: July 26, 2021
    Publication date: November 11, 2021
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Norzafriza NITTA, Yoshihiro SATO, Hidemichi FUJIWARA
  • Publication number: 20210317343
    Abstract: The present disclosure relates to a metal particle-containing composition contains at least one thermosetting resin (R), a hardening agent (H), and at least three types of metal particles (P) different from one another. The metal particles (P) contain a solder alloy particle (P1) containing a tin alloy containing at least one metal (A), wherein the metal (A) is a metal that forms a eutectic crystal with tin at a eutectic temperature of 200° C. or lower, at least one metal particle (P2) containing a metal (B) having a melting point exceeding 420° C. in a bulk, the metal particle (P2) having a melting point higher than a solidus temperature of the solder alloy particle (P1), and at least one metal particle (P3) containing a metal (C) that forms an intermetallic compound with a metal contained in the solder alloy particle (P1).
    Type: Application
    Filed: June 25, 2021
    Publication date: October 14, 2021
    Applicant: Furukawa Electric Co., Ltd.
    Inventors: Norzafriza NITTA, Tomohiro ISHII, Hidemichi FUJIWARA
  • Publication number: 20210189197
    Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.
    Type: Application
    Filed: March 8, 2021
    Publication date: June 24, 2021
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Norzafriza NITTA, Yoshihiro SATO, Hidemichi FUJIWARA
  • Publication number: 20210189198
    Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film for joining a semiconductor element and a substrate, the joining film having an electroconductive joining layer formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer having tackiness and being laminated with the electroconductive joining layer. The tack layer is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer are sintered, and thereby the semiconductor element and the substrate are joined.
    Type: Application
    Filed: March 8, 2021
    Publication date: June 24, 2021
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Norzafriza NITTA, Yoshihiro SATO, Hidemichi FUJIWARA
  • Publication number: 20190273062
    Abstract: The invention provides a joining film that can enhance the mechanical strength and thermal cycle characteristics in a semiconductor device produced by joining a semiconductor element and a substrate, and a tape for wafer processing. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a having a reinforcing layer formed from a porous body or a reticulate body, the pores or meshes of the porous body or the reticulate body being filled with an electroconductive paste containing metal fine particles (p).
    Type: Application
    Filed: May 21, 2019
    Publication date: September 5, 2019
    Applicant: Furukawa Electric Co., Ltd.
    Inventors: Hidemichi FUJIWARA, Norzafriza NITTA
  • Publication number: 20190264072
    Abstract: The invention provides a joining film having sufficient connection heat resistance and high reliability, for which a joining process of joining a semiconductor element and a substrate is simple and easy, a tape for wafer processing, a method for producing a joined body, and a joined body. Disclosed is a joining film 13 for joining a semiconductor element 2 and a substrate 40, the joining film having an electroconductive joining layer 13a formed by molding an electroconductive paste containing metal fine particles (P) into a film form; and a tack layer 13b having tackiness and being laminated with the electroconductive joining layer. The tack layer 13b is thermally decomposed by heating at the time of joining, the metal fine particles (P) of the electroconductive joining layer 13a are sintered, and thereby the semiconductor element 2 and the substrate 40 are joined.
    Type: Application
    Filed: May 15, 2019
    Publication date: August 29, 2019
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Norzafriza NITTA, Yoshihiro SATO, Hidemichi FUJIWARA