Patents by Inventor Nozomu Sugisawa
Nozomu Sugisawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9324971Abstract: A light-emitting module which efficiently extracts light emitted from a light-emitting element is provided. Alternatively, a light-emitting module having lower power consumption or improved reliability is provided. A light-emitting module includes a window material having a light-transmitting property, a light-emitting element that emits light transmitted from a light-transmitting layer to the window material, and an optical bonding layer between the window material and the light-transmitting layer. The optical bonding layer includes a thick part overlapping the light-emitting element and a thin part surrounding the thick part. The light-transmitting layer, the optical bonding layer, and the window material are provided in decreasing order of refractive index.Type: GrantFiled: March 18, 2014Date of Patent: April 26, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yoshiharu Hirakata, Nozomu Sugisawa, Hisao Ikeda, Noriko Miyairi, Naoyuki Senda
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Publication number: 20160044751Abstract: A display device suitable for increasing in size, a display device where display unevenness is suppressed, or a display device that can display an image on a curved surface is provided. The display device includes a first display panel, a second display panel, a first adhesive layer, and a substrate. The first and second display panels each include a first region, a second region, and a barrier layer. The barrier layer includes a portion overlapping with the first region and a portion overlapping with the second region. The first region includes a region transmitting visible light. The second region can display an image. The barrier layer contains an inorganic insulating material and includes a region in contact with the first adhesive layer and a region with a thickness of 10 nm to 2 ?m. The display device includes a region where the substrate, the first adhesive layer, the first region of the second display panel, and the second region of the first display panel overlap each other.Type: ApplicationFiled: August 7, 2015Publication date: February 11, 2016Inventors: Hisao IKEDA, Nozomu SUGISAWA, Yuichi YANAGISAWA
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Publication number: 20160037608Abstract: A display device that can display an image along a curved surface is provided. In the display device, a first display panel and a second display panel overlap each other with a light-transmitting layer provided therebetween. The light-transmitting layer is positioned on a display surface side of the first display panel, and on a side opposite to the display surface of the second display panel. The light-transmitting layer has an average transmittance of 80% or more with respect to light in the wavelength range of 450 nm to 700 nm and a refractive index higher than that of air. A display region of the first display panel overlaps a region transmitting visible light of the second display panel with the light-transmitting layer provided therebetween. It is preferred that the display region of the first display panel not overlap with a region blocking visible light of the second display panel.Type: ApplicationFiled: July 23, 2015Publication date: February 4, 2016Inventors: Hisao IKEDA, Nozomu SUGISAWA, Yuichi YANAGISAWA
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Publication number: 20160019019Abstract: To provide a display device that is suitable for increasing in size. To provide a display device in which display unevenness is suppressed. In a display device, a plurality of display panels are arranged to partly overlap one another. In two of the overlapping display panels, a display panel positioned on the display surface side includes a region transmitting visible light that is adjacent to a display portion, and the region transmitting visible light overlaps with a pixel of a display panel positioned on the lower side. Furthermore, in at least a display portion of the display panel placed on the lower side, an aperture ratio of the pixel overlapping with the region transmitting visible light of the display panel on the upper side is higher than an aperture ratio of another pixel.Type: ApplicationFiled: July 15, 2015Publication date: January 21, 2016Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hisao IKEDA, Nozomu SUGISAWA, Yuichi YANAGISAWA
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Patent number: 9231232Abstract: A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode.Type: GrantFiled: June 3, 2014Date of Patent: January 5, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiki Sasaki, Nozomu Sugisawa, Shunpei Yamazaki
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Patent number: 9224976Abstract: Provided is a light-emitting element including an anode over a substrate, a layer containing a composite material in which a metal oxide is added to an organic compound, a light-emitting layer, and a cathode having a light-transmitting property. The anode is a stack of a film of an aluminum alloy and a film containing titanium or titanium oxide. The film containing titanium or titanium oxide is in contact with the layer containing a composite material.Type: GrantFiled: November 17, 2009Date of Patent: December 29, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Nozomu Sugisawa, Toshiki Sasaki
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Publication number: 20150348804Abstract: A semiconductor device including an oxide semiconductor and an organic resin film is manufactured in the following manner. Heat treatment is performed on a first substrate provided with an organic resin film over a transistor including an oxide semiconductor in a reduced pressure atmosphere; handling of the first substrate is performed in an atmosphere containing moisture as little as possible in an inert gas (e.g., nitrogen) atmosphere with a dew point of lower than or equal to ?60° C., preferably with a dew point of lower than or equal to ?75° C. without exposing the first substrate after the heat treatment to the air; and then, the first substrate is bonded to a second substrate that serves as an opposite substrate.Type: ApplicationFiled: August 13, 2015Publication date: December 3, 2015Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiharu HIRAKATA, Nozomu SUGISAWA, Ryo HATSUMI, Tetsuji ISHITANI
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Patent number: 9159948Abstract: To inhibit surface reflection of a display device. A display device which includes a reflective electrode layer 110; a partition 118 formed to surround the reflective electrode layer; a layer 120 containing a light-emitting organic compound and formed over the partition and the reflective electrode layer; a semi-transmissive electrode layer 122 formed over the layer containing the light-emitting organic compound; and a coloring layer 162 formed over the semi-transmissive electrode layer. The coloring layer overlaps with the reflective electrode layer and the partition. The partition does not overlap with the reflective electrode layer.Type: GrantFiled: March 17, 2014Date of Patent: October 13, 2015Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki KaishaInventors: Nozomu Sugisawa, Hisao Ikeda, Katsuhiro Kikuchi, Manabu Niboshi, Satoshi Inoue, Yuto Tsukamoto, Shinichi Kawato
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Patent number: 9142652Abstract: A semiconductor device including an oxide semiconductor and an organic resin film is manufactured in the following manner. Heat treatment is performed on a first substrate provided with an organic resin film over a transistor including an oxide semiconductor in a reduced pressure atmosphere; handling of the first substrate is performed in an atmosphere containing moisture as little as possible in an inert gas (e.g., nitrogen) atmosphere with a dew point of lower than or equal to ?60° C., preferably with a dew point of lower than or equal to ?75° C. without exposing the first substrate after the heat treatment to the air; and then, the first substrate is bonded to a second substrate that serves as an opposite substrate.Type: GrantFiled: October 8, 2013Date of Patent: September 22, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiharu Hirakata, Nozomu Sugisawa, Ryo Hatsumi, Tetsuji Ishitani
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Patent number: 9054058Abstract: A high-quality light-emitting device having low power consumption, capability of emitting light of a bright color, and less luminance unevenness is provided. Provided is a light-emitting device in which a plurality of light-emitting units each include a light-emitting element which includes a layer (EL layer) containing an organic compound between a first electrode and a second electrode. The first electrode is separated between light-emitting elements. The EL layer includes a layer (light-emitting layer) containing a light-emitting substance and a layer containing a donor substance and an acceptor substance provided between the first electrode and the light-emitting layer. An inversely tapered partition is provided only between adjacent light-emitting units emitting light of different colors.Type: GrantFiled: June 28, 2012Date of Patent: June 9, 2015Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Nozomu Sugisawa, Kaoru Hatano, Shunpei Yamazaki
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Patent number: 9000442Abstract: To simply provide a flexible light-emitting device with long lifetime. To provide a flexible light-emitting device with favorable display characteristics, high yield, and high reliability without display unevenness.Type: GrantFiled: January 13, 2011Date of Patent: April 7, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kaoru Hatano, Takaaki Nagata, Nozomu Sugisawa, Tatsuya Okano, Akihiro Chida, Tatsunori Inoue
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Publication number: 20140284575Abstract: To inhibit surface reflection of a display device. A display device which includes a reflective electrode layer 110; a partition 118 formed to surround the reflective electrode layer; a layer 120 containing a light-emitting organic compound and formed over the partition and the reflective electrode layer; a semi-transmissive electrode layer 122 formed over the layer containing the light-emitting organic compound; and a coloring layer 162 formed over the semi-transmissive electrode layer. The coloring layer overlaps with the reflective electrode layer and the partition. The partition does not overlap with the reflective electrode layer.Type: ApplicationFiled: March 17, 2014Publication date: September 25, 2014Inventors: Nozomu SUGISAWA, Hisao IKEDA, Katsuhiro KIKUCHI, Manabu NIBOSHI, Satoshi INOUE, Yuto TSUKAMOTO, Shinichi KAWATO
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Publication number: 20140284576Abstract: A display device that includes a reflective electrode; a transparent electrode; a partition; an EL layer formed over the partition and the transparent electrode; a semi-transmissive electrode formed over the EL layer; and a coloring layer over the semi-transmissive electrode. A light-emitting region is formed to overlap with the transparent electrode, the EL layer, the semi-transmissive electrode, and the coloring layer. A non-light-emitting region is formed to overlap with the transparent electrode, the partition, the EL layer, and the coloring layer. The non-light-emitting region is formed to surround the light-emitting region. The sum of the optical length of the transparent electrode and the optical length of the EL layer is adjusted to fulfil a condition of a microcavity intensifying light of the color of the coloring layer. The optical length of the partition in the non-light-emitting region is adjusted to weaken external light incident through the coloring layer.Type: ApplicationFiled: March 17, 2014Publication date: September 25, 2014Inventors: Nozomu SUGISAWA, Hisao IKEDA, Katsuhiro KIKUCHI, Manabu NIBOSHI, Satoshi INOUE, Yuto TSUKAMOTO, Shinichi KAWATO
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Publication number: 20140284642Abstract: A light-emitting module which efficiently extracts light emitted from a light-emitting element is provided. Alternatively, a light-emitting module having lower power consumption or improved reliability is provided. A light-emitting module includes a window material having a light-transmitting property, a light-emitting element that emits light transmitted from a light-transmitting layer to the window material, and an optical bonding layer between the window material and the light-transmitting layer. The optical bonding layer includes a thick part overlapping the light-emitting element and a thin part surrounding the thick part. The light-transmitting layer, the optical bonding layer, and the window material are provided in decreasing order of refractive index.Type: ApplicationFiled: March 18, 2014Publication date: September 25, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei YAMAZAKI, Yoshiharu HIRAKATA, Nozomu SUGISAWA, Hisao IKEDA, Noriko MIYAIRI, Naoyuki SENDA
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Publication number: 20140273321Abstract: A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode.Type: ApplicationFiled: June 3, 2014Publication date: September 18, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiki Sasaki, Nozomu Sugisawa, Shunpei Yamazaki
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Patent number: 8803188Abstract: One object is to provide a light-emitting element which overcomes the problems of electrical characteristics and a light reflectivity have been solved. The light-emitting element is manufactured by forming a first electrode including aluminum and nickel over a substrate; by forming a layer including a composite material in which a metal oxide is contained in an organic compound so as to be in contact with the first electrode after heat treatment is performed with respect to the first electrode; by forming a light-emitting layer over the layer including a composite material; and by forming a second electrode which has a light-transmitting property over the light-emitting layer. Further, the first electrode is preferably formed to include the nickel equal to or greater than 0.1 atomic % and equal to or less than 4.0 atomic %.Type: GrantFiled: March 21, 2013Date of Patent: August 12, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Nozomu Sugisawa, Toshiki Sasaki
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Publication number: 20140203266Abstract: Color purity of a light emitting element is improved without an adverse effect such as reduction in voltage and luminance efficiency. The light emitting element has a light emitting laminated body including a light emitting layer between a pair of electrodes. A buffer layer is provided to be in contact with at least one of the electrodes. One of the electrodes is an electrode having high reflectance and the other is a translucent electrode. By employing a translucent electrode, light can be transmitted and reflected. An optical distance between the electrodes is adjusted in accordance with a thickness of the buffer layer, and accordingly, light can be resonated between the electrodes. The buffer layer is made of a composite material including an organic compound and a metal compound; therefore, voltage and luminance efficiency of the light emitting element is not affected even if a distance between the electrodes becomes long.Type: ApplicationFiled: March 25, 2014Publication date: July 24, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryoji NOMURA, Satoshi SEO, Yuji IWAKI, Nozomu SUGISAWA
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Patent number: 8748876Abstract: A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode.Type: GrantFiled: May 9, 2012Date of Patent: June 10, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshiki Sasaki, Nozomu Sugisawa, Shunpei Yamazaki
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Patent number: 8729795Abstract: Color purity of a light emitting element is improved without an adverse effect such as reduction in voltage and luminance efficiency. The light emitting element has a light emitting laminated body including a light emitting layer between a pair of electrodes. A buffer layer is provided to be in contact with at least one of the electrodes. One of the electrodes is an electrode having high reflectance and the other is a translucent electrode. By employing a translucent electrode, light can be transmitted and reflected. An optical distance between the electrodes is adjusted in accordance with a thickness of the buffer layer, and accordingly, light can be resonated between the electrodes. The buffer layer is made of a composite material including an organic compound and a metal compound; therefore, voltage and luminance efficiency of the light emitting element is not affected even if a distance between the electrodes becomes long.Type: GrantFiled: June 15, 2006Date of Patent: May 20, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Ryoji Nomura, Satoshi Seo, Yuji Iwaki, Nozomu Sugisawa
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Publication number: 20140106503Abstract: A semiconductor device including an oxide semiconductor and an organic resin film is manufactured in the following manner. Heat treatment is performed on a first substrate provided with an organic resin film over a transistor including an oxide semiconductor in a reduced pressure atmosphere; handling of the first substrate is performed in an atmosphere containing moisture as little as possible in an inert gas (e.g., nitrogen) atmosphere with a dew point of lower than or equal to ?60° C., preferably with a dew point of lower than or equal to ?75° C. without exposing the first substrate after the heat treatment to the air; and then, the first substrate is bonded to a second substrate that serves as an opposite substrate.Type: ApplicationFiled: October 8, 2013Publication date: April 17, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yoshiharu HIRAKATA, Nozomu SUGISAWA, Ryo HATSUMI, Tetsuji ISHITANI