Abstract: A method of forming recess for a trench gate electrode includes forming a trench in a first major surface of a semiconductor substrate, the trench having a base and a side wall extending from the base to the first major surface, forming a first insulating layer on the base and the side wall of the trench, inserting a first conductive material into the trench that at least partially covers the first insulation layer to form a field plate in a lower portion of the trench, applying a second insulating layer to the first major surface and the trench such that the second insulating layer fills the trench and covers the conductive material, removing the second insulating layer from the first major surface and partially removing the second insulating layer from the trench by etching and forming a recess for a gate electrode in the second insulating layer in the trench.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: Embodiments of the invention relate to a method for minimizing the influence of disturbing signals during calculation of shape elements from coordinate points. An aim of the embodiments of the invention is to exclude the coordinates which are not to be locally assigned to the desired shaped element from the calculation of the shaped element. Said aim is achieved by combining compensation methods for calculating the desired type of shaped element with recognition methods for the same type of shaped element and using the recognition methods for filtering the coordinate points that are relevant for calculating the shaped element out of all input coordinate points.

Abstract: Embodiments of the invention relate to a method for minimizing the influence of disturbing signals during calculation of shape elements from coordinate points. An aim of the embodiments of the invention is to exclude the coordinates which are not to be locally assigned to the desired shaped element from the calculation of the shaped element. Said aim is achieved by combining compensation methods for calculating the desired type of shaped element with recognition methods for the same type of shaped element and using the recognition methods for filtering the coordinate points that are relevant for calculating the shaped element out of all input coordinate points.

Abstract: A method for optimizing target quantities for optical precision measuring includes obtaining ancillary parameters from image data of a workpiece which is to be measured. Control data for influence quantities of the target quantities are derived from the ancillary parameters. The control data is derived as follows: by determining the courses of the ancillary parameters depending on at least one influence quantity and the courses of the ancillary parameters are determined in such a way that the courses have a like extremum of the functional dependence from the influence quantities. An overall course of the ancillary parameters is determined and an extremum of the overall course of the ancillary parameters is determined. Corresponding values of the influence quantities are determined at the site of the determined extremum as control data for the influence quantity.

Abstract: Embodiments of the invention relate to a method for minimizing the influence of disturbing signals during calculation of shape elements from coordinate points. An aim of the embodiments of the invention is to exclude the coordinates which are not to be locally assigned to the desired shaped element from the calculation of the shaped element. This aim is achieved by combining compensation methods for calculating the desired type of shaped element with recognition methods for the same type of shaped element and using the recognition methods for filtering the coordinate points that are relevant for calculating the shaped element out of all input coordinate points.

Abstract: Embodiments of the invention relate to a method for minimizing the influence of disturbing signals during calculation of shape elements from coordinate points. An aim of the embodiments of the invention is to exclude the coordinates which are not to be locally assigned to the desired shaped element from the calculation of the shaped element. Said aim is achieved by combining compensation methods for calculating the desired type of shaped element with recognition methods for the same type of shaped element and using the recognition methods for filtering the coordinate points that are relevant for calculating the shaped element out of all input coordinate points.

Abstract: A method of determining the endpoint of a planarizing process is disclosed. An endpoint detection signal is selectively sampled from at least one predetermined location within a planarizing region defined on a planarizing web. Planarization is stopped when the endpoint criterion based on the endpoint detection signal is detected.

Abstract: A method and apparatus of planarizing substrates is disclosed. A planarizing web medium is prepared for planarizing substrates to reduce defect generation. The planarizing web has a planarizing region and preparing region defined thereon, wherein at least one portion of the preparing region is outside the planarizing region. The web medium is advanced to move one portion of the web out of the planarizing region and another portion into the planarizing region.

Abstract: A method and apparatus of planarizing substrates is disclosed. A planarizing web medium is prepared for planarizing substrates to reduce defect generation. The planarizing web has a planarizing region and preparing region defined thereon, wherein at least one portion of the preparing region is outside the planarizing region. The web medium is advanced to move one portion of the web out of the planarizing region and another portion into the planarizing region.

Abstract: A method of determining the endpoint of a planarizing process is disclosed. An endpoint detection signal is selectively sampled from at least one predetermined location within a planarizing region defined on a planarizing web. Planarization is stopped when the endpoint criterion based on the endpoint detection signal is detected.