Patents by Inventor Omar U. Need, III

Omar U. Need, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5422571
    Abstract: A magnetoresistive read sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a nonmagnetic metallic layer. A layer of nonmagnetic electrically conductive material is deposited adjacent to and in contact with one of the ferromagnetic layers, referred to as a filter layers to form a back or conduction layer which provides a low resistance path for conduction electrons transmitted through the adjacent filter layer. The thickness of the filter layer is selected such that it effectively blocks conduction electrons having spins antiparallel to the direction of magnetization in the filter layer while allowing conduction electrons with parallel spins to be transmitted through the layer into the adjacent back layer.
    Type: Grant
    Filed: February 8, 1993
    Date of Patent: June 6, 1995
    Assignee: International Business Machines Corporation
    Inventors: Bruce A. Gurney, David E. Heim, Haralambos Lefakis, Omar U. Need, III, Virgil S. Speriosu, Dennis R. Wilhoit
  • Patent number: 5408377
    Abstract: A magnetic recording data storage system of high recording density is made possible by an improved magnetoresistive sensor. The sensor has a ferromagnetic sensing layer that is a laminated layer of two ferromagnetic films antiferromagnetically coupled to one another and separated by an antiferromagnetically coupling film. By appropriate selection of the thickness of the nonmagnetic antiferromagnetically coupling film, the ferromagnetic films become antiferromagnetically coupled and their magnetizations rotate as a single rigid unit in the presence of the external magnetic field to be sensed. The ferromagnetic sensing layer can be used in conventional magnetoresistive sensors of the anisotropic magnetoresistive (AMR) type and in spin valve magnetoresistive (SVMR) sensors. In the spin valve sensor, the laminated ferromagnetic sensing layer serves as the free layer and is preferably formed of two films of nickel-iron (Ni-Fe) separated by a ruthenium (Ru) antiferromagnetically coupling film.
    Type: Grant
    Filed: October 15, 1993
    Date of Patent: April 18, 1995
    Assignee: International Business Machines Corporation
    Inventors: Bruce A. Gurney, Haralambos Lefakis, Omar U. Need, III, Stuart S. P. Parkin, Virgil S. Speriosu, Dennis R. Wilhoit
  • Patent number: 4011351
    Abstract: A positive resist image is produced by exposure of a layer of non-crosslinked polymeric material to high energy radiation in a predetermined pattern, the polymeric material containing alkyl methacrylate units and polymerized units of certain other ethylenically unsaturated monomers, followed by removal of the electron degraded material from the exposed areas.
    Type: Grant
    Filed: January 29, 1975
    Date of Patent: March 8, 1977
    Assignee: International Business Machines Corporation
    Inventors: Edward Gipstein, Wayne M. Moreau, Omar U. Need, III
  • Patent number: 3985915
    Abstract: Very sensitive electron beam positive resists have been obtained using films of nitrocellulose containing 10.5 to 12% nitrogen.
    Type: Grant
    Filed: December 20, 1974
    Date of Patent: October 12, 1976
    Assignee: International Business Machines Corporation
    Inventors: Edward Gipstein, Wayne M. Moreau, Omar U. Need, III
  • Patent number: 3961099
    Abstract: Electron beam positive resists which are sensitive to electron beam radiation and simultaneously thermally stable are prepared using polycarbonates.
    Type: Grant
    Filed: September 26, 1974
    Date of Patent: June 1, 1976
    Assignee: International Business Machines Corporation
    Inventors: Edward Gipstein, Wayne M. Moreau, Omar U. Need, III
  • Patent number: 3931435
    Abstract: Very sensitive electron beam positive resists have been obtained using films of polymeric methyl methacrylate containing acetate polymers.
    Type: Grant
    Filed: December 20, 1974
    Date of Patent: January 6, 1976
    Assignee: International Business Machines Corporation
    Inventors: Edward Gipstein, Wayne M. Moreau, Omar U. Need, III