Abstract: A thin film transistor includes: an insulation substrate; a semiconductor layer formed on the insulation substrate including, conductive regions that includes impurity, and a channel region sandwiched between the conductive regions; an insulation layer that covers the semiconductor layer; a gate electrode that is formed on the insulator layer at a position where opposes the channel region; and a source electrode and a drain electrode connected to the conductive regions. The channel region divided into a plurality of channel regions and each of channel widths of the plurality of channel regions is in a range from 5 ?m to 30 ?m.

Abstract: A semiconductor device fabricating method includes forming an amorphous silicon film on a substrate irradiating the amorphous silicon film with laser light to transform at least a part of the amorphous silicon film into a polycrystalline silicon film, and oxidizing the surface of the polycrystalline silicon film in an atmosphere including oxygen, after the irradiation. The laser light is a linear beam having an energy-density gradient of at least 3 (mJ/cm2)/?m in a widthwise direction, and the linear beam is generated by transforming pulsed laser light with a wavelength in a range between 350 nm and 800 nm. The oxidation is performed in a saturated water vapor ambient at a pressure of at least 10 atmospheres and at a temperature in a range between 500° C. and 650° C. With this method, a semiconductor device with excellent crystallinity can be easily fabricated.

Abstract: An electrophotographic OHP sheet comprising a transparent support and a toner-receiving layer formed on one side of the support, with the toner-receiving layer having suitability for toner fixation at a temperature in the neighborhood of 160° C. to 200° C. and comprising (a) a resin having a softening point of from 180° C. to about 190° C., (b) a resin having a softening point of from 110° C. to 140° C. and (c) a plasticizer having a plasticizing efficiency of 1.1 or below.