Abstract: A laser gas regenerating apparatus regenerates a discharged gas discharged from at least one ArF excimer laser apparatus and supplies the regenerated gas to the at least one ArF excimer laser apparatus connected to a first laser gas supply source that supplies a first laser gas and to a second laser gas supply source that supplies a second laser gas. The laser gas regenerating apparatus includes a data obtaining unit that obtains data on a supply amount of the second laser gas supplied to the at least one ArF excimer laser apparatus; a xenon adding unit that adds, to the regenerated gas, a third laser gas; and a control unit that controls, based on the supply amount, an addition amount of the third laser gas by the xenon adding unit.

Abstract: A grinding apparatus includes a chuck table, a grinding unit, a thickness measuring device for measuring a thickness of the workpiece, and a control unit. The thickness measuring device includes a measuring unit for measuring the thickness of the workpiece and a measuring unit moving mechanism for moving the measuring unit back and forth on a measuring track. The control unit controls the measuring unit to measure thicknesses of the workpiece at various points thereon while moving the measuring unit back and forth on the measuring track, calculates a cross-sectional shape of the workpiece from average values of thickness values measured by the measuring unit in a forward stroke on the measuring track and thickness values measured by the measuring unit in a return stroke on the measuring track, and calculates a tilt adjustment variable for a table rotational axis according to the calculated cross-sectional shape.

Abstract: A data analyzer includes a data collector that acquires data on each analysis target parameter of each of a plurality of apparatuses from the apparatus, the plurality of apparatuses including a light source apparatus, an exposure apparatus that exposes a wafer to pulsed light outputted from the light source apparatus, and a wafer inspection apparatus that inspects the exposed wafer, an image generator that visualizes the data on each of the parameters collected by the data collector from the apparatuses that process the wafer for each predetermined area of the wafer to convert the data into an image and generates a plurality of mapped images for each of the parameters of the apparatuses, and a correlation computing section that performs pattern matching on arbitrary ones of the mapped images generated from the wafer to determine a correlation value between arbitrary ones of the parameters of the apparatuses.

Abstract: A maintenance management method for a lithography system according to a viewpoint of the present disclosure includes organizing and saving operating information for each of lithography cells that are each an apparatus group formed of a set of apparatuses and form the lithography system, organizing and saving maintenance information on consumables for each of the lithography cells, calculating a standard maintenance timing for each of the consumables for each of the lithography cells based on the operating information and the maintenance information on the consumable for each of the lithography cells, creating a maintenance schedule plan for each of the lithography cells or for each of manufacturing lines based on the standard maintenance timing, information on a downtime, and information on a loss cost due to the downtime for each of the lithography cells or for each of the manufacturing lines, and outputting the result of the creation of the maintenance schedule plan.

Abstract: A wavelength converter including: A. a crystal holder configured to hold a nonlinear crystal configured to convert a wavelength of a laser beam incident thereon and output the wavelength-converted laser beam; B. a first container configured to accommodate the crystal holder and include a light incident window so provided as to intersect an optical path of the laser beam incident on the nonlinear crystal and a light exiting window so provided as to intersect the optical path of the laser beam having exited out of the nonlinear crystal; C. a second container configured to accommodate the first container; D. a position adjusting mechanism configured to adjust at least a position of the first container; and E. an isolation mechanism configured to spatially isolate the light incident window and the light exiting window from the position adjusting mechanism.

Abstract: A laser apparatus including an optical element made of a CaF2 crystal and configured to transmit an ultraviolet laser beam obliquely incident on one surface of the optical element, the electric field axis of the P-polarized component of the laser beam propagating through the optical element coinciding with one axis contained in <111> of the CaF2 crystal, with the P-polarized component defined with respect to the one surface. A method for manufacturing an optical element, the method including causing a seed CaF2 crystal to undergo crystal growth along one axis contained in <111> to form an ingot, setting a cutting axis to be an axis inclining by an angle within 14.18±5° with respect to the crystal growth direction toward the direction of another axis contained in <111>, which differs from the crystal growth direction, and cutting the ingot along a plane perpendicular to the cutting axis.

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 ?m to 150 ?m inclusive at the transfer position.

Abstract: A laser system includes: A. a solid-state laser apparatus configured to output a pulse laser beam having light intensity distribution in a Gaussian shape that is rotationally symmetric about an optical path axis; B. an amplifier including a pair of discharge electrodes and configured to amplify the pulse laser beam in a discharge space between the pair of discharge electrodes; and C. a conversion optical system configured to convert the light intensity distribution of the pulse laser beam output from the amplifier into a top hat shape in each of a discharge direction of the pair of discharge electrodes and a direction orthogonal to the discharge direction.

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 ?m to 150 ?m inclusive at the transfer position.

Abstract: A method for manufacturing a semiconductor crystalline thin film according to a viewpoint of the present disclosure includes radiating first pulsed laser light having a first pulse duration to an amorphous semiconductor to poly-crystallize the amorphous semiconductor and radiating second pulsed laser light having a second pulse duration shorter than the first pulse duration to an area of a semiconductor crystal having undergone the poly-crystallization to lower the height of ridges of the semiconductor crystal.

Abstract: A gas laser apparatus may include a chamber filled with a laser gas; a window provided in the chamber and through which a laser beam passes; an optical path tube connected to the chamber to surround a position of the window in the chamber; a heated gas supply port configured to supply a heated purge gas into a closed space including a space in the optical path tube; and an exhaust port configured to exhaust a gas in the closed space.

Abstract: A gas laser apparatus includes: a magnetic bearing including an electromagnet capable of controlling a magnetic force, and configured to rotatably support a rotary shaft of a fan in a magnetically levitated state by the magnetic force, the fan being configured to supply a laser gas; an electromagnet control unit configured to control the magnetic force of the electromagnet based on displacement of a levitated position of the rotary shaft and adjust the levitated position; a motor configured to generate torque for rotating the fan; a magnetic coupling configured to couple the rotary shaft and a drive shaft of a motor with a magnetic attractive force and transmit the torque of the motor to the rotary shaft; an attractive force estimating sensor configured to detect a parameter that enables an attractive force of the magnetic coupling to be estimated; an attractive force measuring unit configured to measure the attractive force of the magnetic coupling based on the detected parameter; and a correction unit confi

Abstract: A machine learning method according to a viewpoint of the present disclosure is a machine learning method for creating a learning model configured to estimate the life of a consumable of a laser apparatus, the method including acquiring first life-related information containing data on a parameter relating to the life of the consumable, the data recorded in correspondence with different numbers of oscillation pulses during a period from the start of use of the consumable to replacement thereof, dividing the first life-related information into a plurality of levels each representing the degree of degradation of the consumable in accordance with the numbers of oscillation pulses to create training data, creating the learning model by performing machine learning using the created training data, and saving the created learning model.

Abstract: A laser processing apparatus includes a placement base on which a workpiece is placed, a beam shaping optical system that shapes laser light such that a first laser light irradiated region of a mask blocking part of the laser light has a rectangular shape having short edges and long edges, the beam shaping optical system capable of causing one of a first radiation width of the first irradiated region in the direction parallel to the short edges and a second radiation width of the first irradiated region in the direction parallel to the long edges to be fixed and causing the other to be changed, a projection optical system that projects a pattern on the mask onto the workpiece, and a mover that moves the first irradiated region at least in the direction parallel to the short edges to move a second laser light irradiated region of the workpiece.

Abstract: A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

Abstract: In a laser system according to a viewpoint of the present disclosure, a first amplifier amplifies first pulsed laser light outputted from a first semiconductor laser system into second pulsed laser light, a wavelength conversion system converts the second pulsed laser light in terms of wavelength into third pulsed laser light, and an excimer amplifier amplifies the third pulsed laser light. The first semiconductor laser system includes a first current controller that controls current flowing through a first semiconductor laser in such a way that first laser light outputted from the first semiconductor laser is caused to undergo chirping and a first semiconductor optical amplifier that amplifies the first laser light into pulsed light. The laser system includes a control section that controls the amount of chirping performed on the first pulsed laser light in such a way that excimer laser light having a target spectral linewidth is achieved.

Abstract: A laser system according to one aspect of the present disclosure includes a wavelength-variable first solid-state laser device configured to output a first pulse laser beam; a wavelength conversion system including a first nonlinear crystal configured to wavelength-convert the first pulse laser beam and a first rotation stage configured to change a first incident angle of the first pulse laser beam on the first nonlinear crystal; an excimer amplifier configured to amplify a pulse laser beam wavelength-converted by the wavelength conversion system; and a control unit configured to receive, from an external device, data of a target center wavelength of an excimer laser beam output from the excimer amplifier, control a wavelength of the first pulse laser beam in accordance with the instructed target center wavelength, and control the first incident angle on the first nonlinear crystal in accordance with an average value of the target center wavelength.

Abstract: A laser system according to one aspect of the present disclosure includes a first solid-state laser device, a wavelength conversion system, an excimer amplifier, and a control unit. The first solid-state laser device includes a first multiple semiconductor laser system, a first semiconductor optical amplifier, and a first fiber amplifier. The first multiple semiconductor laser system includes a plurality of first semiconductor lasers configured to perform continuous wave oscillation in a single longitudinal mode with different wavelengths, a first spectrum monitor, and a first beam combiner. The control unit controls an oscillation wavelength and light intensity of each line of a first multiline spectrum generated by the first semiconductor lasers to obtain an excimer laser beam having at least a target center wavelength or a target spectral line width instructed by an external device.

Abstract: A discharge excitation gas laser device includes: first and second discharge electrodes disposed to face each other; a plurality of peaking capacitors connected to the first discharge electrode; a charger; a plurality of pulse power modules, each one of the pulse power modules including a charging capacitor to which a charged voltage is applied from the charger, a pulse compression circuit that pulse-compresses and outputs electrical energy stored in the charging capacitor as an output pulse to a corresponding peaking capacitor, and a switch disposed between the charging capacitor and the pulse compression circuit; a plurality of output pulse sensors, each one of the output pulse sensors detecting an output pulse output by a corresponding pulse power module; and a control unit configured to control, based on a detection result of each of the output pulse sensor, a timing of a switch signal to be input to a corresponding switch.

Abstract: A maintenance management method for a lithography system according to a viewpoint of the present disclosure includes organizing and saving operating information for each of lithography cells that are each an apparatus group formed of a set of apparatuses and form the lithography system, organizing and saving maintenance information on consumables for each of the lithography cells, calculating a standard maintenance timing for each of the consumables for each of the lithography cells based on the operating information and the maintenance information on the consumable for each of the lithography cells, creating a maintenance schedule plan for each of the lithography cells or for each of manufacturing lines based on the standard maintenance timing, information on a downtime, and information on a loss cost due to the downtime for each of the lithography cells or for each of the manufacturing lines, and outputting the result of the creation of the maintenance schedule plan.