Abstract: An extreme ultraviolet light (EUV) generation system is configured to improve conversion efficiency of energy of a laser system to EUV energy by improving the efficiency of plasma generation. The EUV generation system includes a target generation unit configured to output a target toward a plasma generation region in a chamber. The laser system is configured to generate a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam so that the target is irradiated with the first pre-pulse laser beam, the second pre-pulse laser beam, and the main pulse laser beam in this order. In addition, the EUV generation system includes a controller configured to control the laser system so that a fluence of the second pre-pulse laser beam is equal to or higher than 1 J/cm2 and equal to or lower than a fluence of the main pulse laser beam.

Abstract: A laser processing apparatus according to the present disclosure includes a placement base on which a processing receiving object is placed, an optical system that guides laser light to the processing receiving object, a gas supply port via which a gas is supplied to a laser light irradiated region of the processing receiving object, a gas recovery port via which the supplied gas is recovered, a mover that moves the irradiated region, and a controller that controls, in accordance with the moving direction of the irradiated region, the direction of the flow of the gas flowing from the gas supply port to the gas recovery port, and the controller changes the direction of the gas flow in response to a change in the moving direction of the irradiated region in such a way that the gas flows in the direction opposite the moving direction of the irradiated region.

Abstract: A laser gas purifying system to purify laser gas emitted from a laser apparatus and return purified gas to the laser apparatus may include a first pipe configured to pass the laser gas emitted from the laser apparatus, a purifying apparatus connected to the first pipe and configured to purify the laser gas emitted from the laser apparatus, a second pipe connected to the purifying apparatus and configured to return the purified gas purified by the purifying apparatus to the laser apparatus, and an exhausting device provided in at least one of the first pipe, the purifying apparatus, and the second pipe.

Abstract: A laser gas regeneration system for an excimer laser includes a first pipe capable of supplying a laser chamber with a first laser gas, a second pipe capable of supplying the laser chamber with a second laser gas having a halogen gas concentration higher than that of the first laser gas, a third pipe allowing a gas exhausted from the laser chamber to pass therethrough, a gas refiner that refines the gas having passed through the third pipe, a branch that causes the refined gas to divide and flow into a fourth pipe and a fifth pipe, a first regenerated gas supplier that supplies the first pipe with a gas having divided and flowed into the fourth pipe, and a second regenerated gas supplier that adds a halogen gas to a gas having divided and flowed into the fifth pipe and supplies the second pipe with the halogen-added gas.

Abstract: A laser gas regenerating apparatus regenerates a discharged gas discharged from at least one ArF excimer laser apparatus and supplies the regenerated gas to the at least one ArF excimer laser apparatus connected to a first laser gas supply source that supplies a first laser gas and to a second laser gas supply source that supplies a second laser gas. The laser gas regenerating apparatus includes a data obtaining unit that obtains data on a supply amount of the second laser gas supplied to the at least one ArF excimer laser apparatus; a xenon adding unit that adds, to the regenerated gas, a third laser gas; and a control unit that controls, based on the supply amount, an addition amount of the third laser gas by the xenon adding unit.

Abstract: An EUV light generator including the following components: A. an electron storage ring including a first linear section and a second linear section; B. an electron supplier configured to supply the electron storage ring with an electron bunch; C. a high-frequency acceleration cavity disposed in the first linear section and configured to accelerate the electron bunch in such a way that a length Lez of the electron bunch satisfies “0.09 m?Lez?3 m;” and D. an undulator disposed in the second linear section and configured to output EUV light when the electron bunch enters the undulator.

Abstract: A laser gas management system includes a gas regeneration apparatus connected to a plurality of excimer laser apparatuses and configured to regenerate a laser gas discharged from the plurality of excimer laser apparatuses into a regenerated gas and supply the plurality of excimer laser apparatuses with the regenerated gas and a controller configured to evaluate whether or not at least one parameter of any of the plurality of excimer laser apparatuses has exceeded a range determined in advance and determine that abnormality has occurred in the gas regeneration apparatus when the at least one parameter has exceeded the range determined in advance in two or more of the excimer laser apparatuses.

Abstract: An extreme ultraviolet light generation system includes: a target supply unit configured to output a target toward a predetermined region; a drive laser configured to output a drive laser beam in a first duration; a guide laser configured to output a guide laser beam; a beam combiner configured to substantially align the optical path axes of the drive and guide laser beams and output the laser beams; a laser beam focusing optical system configured to focus the laser beams output from the beam combiner to the predetermined region; an actuator configured to change the focusing positions of the laser beams through the laser beam focusing optical system; an optical sensor configured to detect reflected light of the guide laser beam from the target; and a control unit configured to control the actuator so that the light amount of the reflected light thus detected increases in a second duration.

Abstract: A laser apparatus includes first and second wavelength dispersion elements, an optical element, first and second actuators, and a control unit. The first wavelength dispersion element generates wavelength dispersion in a direction orthogonal to an electric discharge direction between a pair of electric discharge electrodes. The second wavelength dispersion element generates wavelength dispersion in a direction parallel to the electric discharge direction. The optical element corrects wavelength dispersion generated by the second wavelength dispersion element. The first actuator drives the first wavelength dispersion element. The second actuator drives the optical element. The control unit controls the first actuator so that the center wavelength of the laser light approaches to a target wavelength and controls the second actuator so as to correct the wavelength dispersion generated by the second wavelength dispersion element.

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light includes: A. a positioning step of performing positioning so that a transfer position of a transfer image is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in an optical axis direction; B. an irradiation condition acquisition step; C. a determination step of determining whether a maximum fluence of a pulse laser beam at the surface of the transparent material is within a predetermined range based on irradiation conditions; and D. a control step of allowing irradiation with the pulse laser beam when the maximum fluence is determined to be in the predetermined range.

Abstract: An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction, unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.

Abstract: A laser irradiation method of irradiating, with a pulse laser beam, an irradiation object in which an impurity source film is formed on a semiconductor substrate includes: reading fluence per pulse of the pulse laser beam with which a rectangular irradiation region set on the irradiation object is irradiated and the number of irradiation pulses the irradiation region is irradiated, the fluence being equal to or larger than a threshold at or beyond which ablation potentially occurs to the impurity source film when the irradiation object is irradiated with pulses of the pulse laser beam in the irradiation pulse number and smaller than a threshold at or beyond which damage potentially occurs to the surface of the semiconductor substrate; calculating a scanning speed Vdx; and moving the irradiation object at the scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f.

Abstract: The present invention allows more freely setting of the polarization direction of illumination light on an illumination surface of an exposure device. A beam transmission system (121) that transmits, to an exposure device (130), a linearly polarized optical beam (L) output from a free electron laser device (10) includes: an optical beam splitting unit (50) configured to split the optical beam (L) into a first optical beam (L1) and a second optical beam (L2); and a first polarization direction rotating unit (51) configured to rotate the linear polarization direction of the first optical beam (L1).

Abstract: A laser radiation optical system for laser doping and post-annealing, the laser radiation system including A. a laser apparatus configured to generate pulsed laser light that belongs to an ultraviolet region, B. a stage configured to move a radiation receiving object in an at least one scan direction, the radiation receiving object being an impurity source film containing at least an impurity element as a dopant and formed on a semiconductor substrate, and C. an optical system including a beam homogenizer configured to shape the beam shape of the pulsed laser light into a rectangular shape and generate a beam for laser doping and a beam for post-annealing that differ from each other in terms of a first beam width in the scan direction but have the same second beam width perpendicular to the scan direction.

Abstract: A laser radiation system according to a viewpoint of the present disclosure includes a first optical system configured to convert a first laser flux into a second laser flux, a multimirror device including mirrors, configured to be capable of controlling the angle of the attitude of each of the mirrors, and configured to divide the second laser flux into laser fluxes and reflect the laser fluxes in directions to produce the divided laser fluxes, a Fourier transform optical system configured to focus the divided laser fluxes, and a control section configured to control the angle of the attitude of each of the mirrors in such a way that the Fourier transform optical system superimposes the laser fluxes, which are divided by the mirrors separate from each other by at least a spatial coherence length of the second laser flux, on one another.

Abstract: A gas laser apparatus may include: a laser chamber connected through a first control valve to a first laser gas supply source that supplies a first laser gas containing a halogen gas; a purification column that removes at least a part of the halogen gas and a halogen compound from at least a part of a gas exhausted from the laser chamber; a booster pump; and a controller that calculates, on a basis of a first amount of a gas supplied from the booster pump to the laser chamber, a second amount of the first laser gas that is to be supplied to the laser chamber and controls the first control valve on a basis of a result of the calculation of the second amount.

Abstract: A laser processing system includes a wavelength tunable laser apparatus capable of changing the wavelength of pulsed laser light to be outputted, an optical system irradiating a workpiece with the pulsed laser light, a reference wavelength acquisition section acquiring a reference wavelength corresponding to photon absorption according to the material of the workpiece, a laser processing controller controlling the wavelength tunable laser apparatus to perform preprocessing before final processing performed on the workpiece, changes the wavelength of the pulsed laser light over a predetermined range containing the reference wavelength, and performs wavelength search preprocessing at a plurality of wavelengths, a processed state measurer measuring a processed state on a wavelength basis achieved by the wavelength search preprocessing performed at the plurality of wavelengths, and an optimum wavelength determination section assessing the processed state on a wavelength basis to determine an optimum wavelength us

Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 ?m to 150 ?m inclusive at the transfer position.

Abstract: A mirror for extreme ultraviolet light includes: a substrate (41); a multilayer film (42) provided on the substrate and configured to reflect extreme ultraviolet light; and a capping layer (53) provided on the multilayer film, and the capping layer includes a first layer (61) containing an oxide of a metal, and a second layer (62) arranged between the first layer and the multilayer film and containing at least one of a boride of the metal and a nitride of the metal.

Abstract: A mirror for extreme ultraviolet light includes: a substrate (41); a multilayer film (42) provided on the substrate and configured to reflect extreme ultraviolet light; and a capping layer (53) provided on the multilayer film, and the capping layer includes a first layer (61) containing a compound of a metal having lower electronegativity than Ti and a non-metal and having a lower density than TiO2, and a second layer (62) arranged between the first layer and the multilayer film and having a higher density than the first layer.