Patents by Inventor Padmanabhan Krishnaraj
Padmanabhan Krishnaraj has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7799698Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: GrantFiled: June 5, 2006Date of Patent: September 21, 2010Assignee: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N. Pham, Farhad K. Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 7722737Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.Type: GrantFiled: May 4, 2005Date of Patent: May 25, 2010Assignee: Applied Materials, Inc.Inventors: Sudhir Gondhalekar, Robert Duncan, Siamak Salimian, Muhammad M. Rasheed, Harry Smith Whitesell, Bruno Geoffrion, Padmanabhan Krishnaraj, Rudolf Gujer, Diana E. Gujer, legal representative
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Patent number: 7691753Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: GrantFiled: June 5, 2006Date of Patent: April 6, 2010Assignee: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N. Pham, Farhad K. Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 7498268Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.Type: GrantFiled: October 23, 2006Date of Patent: March 3, 2009Assignee: Applied Materials, Inc.Inventors: Sudhir Gondhalekar, Padmanabhan Krishnaraj, Tom K. Cho, Muhammad Rasheed, Hemant Mungekar, Thanh N. Pham, Zhong Qiang Hua
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Patent number: 7431772Abstract: A gas distributor distributes a gas across a surface of a substrate processing chamber. The gas distributor has a hub, a baffle extending radially outward from the hub, a first set of vanes and a second set of vanes. In one version, the hub has a gas inlet and a gas outlet. The baffle has an opposing first and second surfaces. First vanes are on the first surface of the baffle and direct gas across chamber surfaces. In one version, the first vanes comprise arcuate plates that curve and taper outward from the hub. Second vanes are on the second surface of the baffle and direct gas across the second surface of the baffle. In one version, a gas feed-through tube in the hub can allow a gas to bypass the first and second set of vanes.Type: GrantFiled: March 9, 2004Date of Patent: October 7, 2008Assignee: Applied Materials, Inc.Inventors: Laxman Murugesh, Padmanabhan Krishnaraj, Carl Dunham
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Patent number: 7399388Abstract: A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.Type: GrantFiled: July 25, 2003Date of Patent: July 15, 2008Assignee: Applied Materials, Inc.Inventors: Farhad K. Moghadam, Michael S. Cox, Padmanabhan Krishnaraj, Thanh N. Pham
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Patent number: 7399707Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.Type: GrantFiled: January 13, 2005Date of Patent: July 15, 2008Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Pavel Ionov, Canfeng Lai, Michael Santiago Cox, Shamouil Shamouilian
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Publication number: 20080041821Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.Type: ApplicationFiled: October 23, 2007Publication date: February 21, 2008Applicant: Applied Materials, Inc.Inventors: Sudhir Gondhalekar, Robert Duncan, Siamak Salimian, Muhammad Rasheed, Harry Smith Whitesell, Bruno Geoffrion, Padmanabhan Krishnaraj, Rudolf Gujer, Diana Gujer
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Patent number: 7189639Abstract: A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.Type: GrantFiled: February 10, 2005Date of Patent: March 13, 2007Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Michael S. Cox, Bruno Geoffrion, Srinivas D. Nemani
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Publication number: 20070048446Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.Type: ApplicationFiled: October 23, 2006Publication date: March 1, 2007Applicant: Applied Materials, Inc.Inventors: Sudhir Gondhalekar, Padmanabhan Krishnaraj, Tom Cho, Muhammad Rasheed, Hemant Mungekar, Thanh Pham, Zhong Hua
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Publication number: 20060286764Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: ApplicationFiled: June 5, 2006Publication date: December 21, 2006Applicant: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh Pham, Farhad Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 7141138Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.Type: GrantFiled: July 28, 2003Date of Patent: November 28, 2006Assignee: Applied Materials, Inc.Inventors: Sudhir Gondhalekar, Padmanabhan Krishnaraj, Tom K. Cho, Muhammad Rasheed, Hemant Mungekar, Thanh N. Pham, Zhong Qiang Hua
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Publication number: 20060228886Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: ApplicationFiled: June 5, 2006Publication date: October 12, 2006Applicant: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh Pham, Farhad Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 7097886Abstract: A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.Type: GrantFiled: December 13, 2002Date of Patent: August 29, 2006Assignee: Applied Materials, Inc.Inventors: Farhad K. Moghadam, Michael S. Cox, Padmanabhan Krishnaraj, Thanh N. Pham, Zhenjiang Cui
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Publication number: 20060178003Abstract: A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.Type: ApplicationFiled: February 10, 2005Publication date: August 10, 2006Applicant: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Michael Cox, Bruno Geoffrion, Srinivas Nemani
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Patent number: 7081414Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: GrantFiled: May 23, 2003Date of Patent: July 25, 2006Assignee: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N Pham, Farhad K Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Patent number: 7064077Abstract: A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.Type: GrantFiled: October 1, 2004Date of Patent: June 20, 2006Assignee: Applied MaterialsInventors: Zhong Qiang Hua, Dong Qing Li, Zhengquan Tan, Zhuang Li, Michael Chiu Kwan, Bruno Geoffrion, Padmanabhan Krishnaraj
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Publication number: 20060113038Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.Type: ApplicationFiled: May 4, 2005Publication date: June 1, 2006Applicant: Applied Materials, Inc.Inventors: Sudhir Gondhalekar, Robert Duncan, Siamak Salimian, Muhammad Rasheed, Harry Whitesell, Bruno Geoffrion, Padmanabhan Krishnaraj, Rudolf Gujer
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Publication number: 20050214457Abstract: A method for depositing a low dielectric constant film includes providing a gas mixture including a cyclic organosiloxane and N2O as an oxidizing gas to a chamber and applying RF power to the gas mixture to deposit a low dielectric constant film. The gas mixture may also include oxygen and/or a linear hydrocarbon. In one aspect, the gas mixture includes N2O and oxygen as oxidizing gases, and a ratio of the flow rate of the N2O to a total flow rate of the N2O and the oxygen is between about 0.1 and about 0.5.Type: ApplicationFiled: March 29, 2004Publication date: September 29, 2005Inventors: Francimar Schmitt, Kimberly Branshaw, Padmanabhan Krishnaraj, Hichem M'Saad
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Publication number: 20050199184Abstract: A gas distributor distributes a gas across a surface of a substrate processing chamber. The gas distributor has a hub, a baffle extending radially outward from the hub, a first set of vanes and a second set of vanes. In one version, the hub has a gas inlet and a gas outlet. The baffle has an opposing first and second surfaces. First vanes are on the first surface of the baffle and direct gas across chamber surfaces. In one version, the first vanes comprise arcuate plates that curve and taper outward from the hub. Second vanes are on the second surface of the baffle and direct gas across the second surface of the baffle. In one version, a gas feed-through tube in the hub can allow a gas to bypass the first and second set of vanes.Type: ApplicationFiled: March 9, 2004Publication date: September 15, 2005Inventors: Laxman Murugesh, Padmanabhan Krishnaraj, Carl Dunham