Patents by Inventor Padmanabhan Krishnaraj

Padmanabhan Krishnaraj has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7799698
    Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
    Type: Grant
    Filed: June 5, 2006
    Date of Patent: September 21, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N. Pham, Farhad K. Moghadam, Zhuang Li, Padmanabhan Krishnaraj
  • Patent number: 7722737
    Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.
    Type: Grant
    Filed: May 4, 2005
    Date of Patent: May 25, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Robert Duncan, Siamak Salimian, Muhammad M. Rasheed, Harry Smith Whitesell, Bruno Geoffrion, Padmanabhan Krishnaraj, Rudolf Gujer, Diana E. Gujer, legal representative
  • Patent number: 7691753
    Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
    Type: Grant
    Filed: June 5, 2006
    Date of Patent: April 6, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N. Pham, Farhad K. Moghadam, Zhuang Li, Padmanabhan Krishnaraj
  • Patent number: 7498268
    Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
    Type: Grant
    Filed: October 23, 2006
    Date of Patent: March 3, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Padmanabhan Krishnaraj, Tom K. Cho, Muhammad Rasheed, Hemant Mungekar, Thanh N. Pham, Zhong Qiang Hua
  • Patent number: 7431772
    Abstract: A gas distributor distributes a gas across a surface of a substrate processing chamber. The gas distributor has a hub, a baffle extending radially outward from the hub, a first set of vanes and a second set of vanes. In one version, the hub has a gas inlet and a gas outlet. The baffle has an opposing first and second surfaces. First vanes are on the first surface of the baffle and direct gas across chamber surfaces. In one version, the first vanes comprise arcuate plates that curve and taper outward from the hub. Second vanes are on the second surface of the baffle and direct gas across the second surface of the baffle. In one version, a gas feed-through tube in the hub can allow a gas to bypass the first and second set of vanes.
    Type: Grant
    Filed: March 9, 2004
    Date of Patent: October 7, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Laxman Murugesh, Padmanabhan Krishnaraj, Carl Dunham
  • Patent number: 7399388
    Abstract: A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
    Type: Grant
    Filed: July 25, 2003
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Farhad K. Moghadam, Michael S. Cox, Padmanabhan Krishnaraj, Thanh N. Pham
  • Patent number: 7399707
    Abstract: A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.
    Type: Grant
    Filed: January 13, 2005
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Padmanabhan Krishnaraj, Pavel Ionov, Canfeng Lai, Michael Santiago Cox, Shamouil Shamouilian
  • Publication number: 20080041821
    Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.
    Type: Application
    Filed: October 23, 2007
    Publication date: February 21, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Robert Duncan, Siamak Salimian, Muhammad Rasheed, Harry Smith Whitesell, Bruno Geoffrion, Padmanabhan Krishnaraj, Rudolf Gujer, Diana Gujer
  • Patent number: 7189639
    Abstract: A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.
    Type: Grant
    Filed: February 10, 2005
    Date of Patent: March 13, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Padmanabhan Krishnaraj, Michael S. Cox, Bruno Geoffrion, Srinivas D. Nemani
  • Publication number: 20070048446
    Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
    Type: Application
    Filed: October 23, 2006
    Publication date: March 1, 2007
    Applicant: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Padmanabhan Krishnaraj, Tom Cho, Muhammad Rasheed, Hemant Mungekar, Thanh Pham, Zhong Hua
  • Publication number: 20060286764
    Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
    Type: Application
    Filed: June 5, 2006
    Publication date: December 21, 2006
    Applicant: Applied Materials, Inc.
    Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh Pham, Farhad Moghadam, Zhuang Li, Padmanabhan Krishnaraj
  • Patent number: 7141138
    Abstract: The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
    Type: Grant
    Filed: July 28, 2003
    Date of Patent: November 28, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Padmanabhan Krishnaraj, Tom K. Cho, Muhammad Rasheed, Hemant Mungekar, Thanh N. Pham, Zhong Qiang Hua
  • Publication number: 20060228886
    Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
    Type: Application
    Filed: June 5, 2006
    Publication date: October 12, 2006
    Applicant: Applied Materials, Inc.
    Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh Pham, Farhad Moghadam, Zhuang Li, Padmanabhan Krishnaraj
  • Patent number: 7097886
    Abstract: A method of depositing an insulating film over a substrate having a gap formed between two adjacent raised features. The method includes depositing one portion of the insulating film over the substrate and in the gap using a high density plasma process that has simultaneous deposition and sputtering components and depositing another portion of the insulating film over the substrate and in the gap using an atomic layer deposition process. In some embodiments the portion of the film deposited by an atomic layer deposition process is deposited over the portion of the film deposited using a high density plasma CVD technique. In other embodiments, the portion of the film deposited by a high density plasma CVD process is deposited over the portion of the film deposited using an atomic layer deposition process.
    Type: Grant
    Filed: December 13, 2002
    Date of Patent: August 29, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Farhad K. Moghadam, Michael S. Cox, Padmanabhan Krishnaraj, Thanh N. Pham, Zhenjiang Cui
  • Publication number: 20060178003
    Abstract: A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.
    Type: Application
    Filed: February 10, 2005
    Publication date: August 10, 2006
    Applicant: Applied Materials, Inc.
    Inventors: Padmanabhan Krishnaraj, Michael Cox, Bruno Geoffrion, Srinivas Nemani
  • Patent number: 7081414
    Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
    Type: Grant
    Filed: May 23, 2003
    Date of Patent: July 25, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh N Pham, Farhad K Moghadam, Zhuang Li, Padmanabhan Krishnaraj
  • Patent number: 7064077
    Abstract: A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
    Type: Grant
    Filed: October 1, 2004
    Date of Patent: June 20, 2006
    Assignee: Applied Materials
    Inventors: Zhong Qiang Hua, Dong Qing Li, Zhengquan Tan, Zhuang Li, Michael Chiu Kwan, Bruno Geoffrion, Padmanabhan Krishnaraj
  • Publication number: 20060113038
    Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.
    Type: Application
    Filed: May 4, 2005
    Publication date: June 1, 2006
    Applicant: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Robert Duncan, Siamak Salimian, Muhammad Rasheed, Harry Whitesell, Bruno Geoffrion, Padmanabhan Krishnaraj, Rudolf Gujer
  • Publication number: 20050214457
    Abstract: A method for depositing a low dielectric constant film includes providing a gas mixture including a cyclic organosiloxane and N2O as an oxidizing gas to a chamber and applying RF power to the gas mixture to deposit a low dielectric constant film. The gas mixture may also include oxygen and/or a linear hydrocarbon. In one aspect, the gas mixture includes N2O and oxygen as oxidizing gases, and a ratio of the flow rate of the N2O to a total flow rate of the N2O and the oxygen is between about 0.1 and about 0.5.
    Type: Application
    Filed: March 29, 2004
    Publication date: September 29, 2005
    Inventors: Francimar Schmitt, Kimberly Branshaw, Padmanabhan Krishnaraj, Hichem M'Saad
  • Publication number: 20050199184
    Abstract: A gas distributor distributes a gas across a surface of a substrate processing chamber. The gas distributor has a hub, a baffle extending radially outward from the hub, a first set of vanes and a second set of vanes. In one version, the hub has a gas inlet and a gas outlet. The baffle has an opposing first and second surfaces. First vanes are on the first surface of the baffle and direct gas across chamber surfaces. In one version, the first vanes comprise arcuate plates that curve and taper outward from the hub. Second vanes are on the second surface of the baffle and direct gas across the second surface of the baffle. In one version, a gas feed-through tube in the hub can allow a gas to bypass the first and second set of vanes.
    Type: Application
    Filed: March 9, 2004
    Publication date: September 15, 2005
    Inventors: Laxman Murugesh, Padmanabhan Krishnaraj, Carl Dunham