Patents by Inventor Palani Sakthivel
Palani Sakthivel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7709814Abstract: Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.Type: GrantFiled: June 17, 2005Date of Patent: May 4, 2010Assignee: Axcelis Technologies, Inc.Inventors: Carlo Waldfried, Christopher Garmer, Orlando Escorcia, Ivan Berry, III, Palani Sakthivel, Alan C. Janos
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Publication number: 20060141806Abstract: Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.Type: ApplicationFiled: June 17, 2005Publication date: June 29, 2006Inventors: Carlo Waldfried, Christopher Garmer, Orlando Escorcia, Ivan Berry, Palani Sakthivel, Alan Janos
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Patent number: 6951823Abstract: A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.Type: GrantFiled: August 11, 2003Date of Patent: October 4, 2005Assignee: Axcelis Technologies, Inc.Inventors: Carlo Waldfried, Orlando Escorcia, Qingyuan Han, Thomas Buckley, Palani Sakthivel
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Publication number: 20040084412Abstract: A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.Type: ApplicationFiled: August 11, 2003Publication date: May 6, 2004Inventors: Carlo Waldfried, Orlando Escorcia, Qingyuan Han, Thomas Buckley, Palani Sakthivel
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Patent number: 6638875Abstract: A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles. The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.Type: GrantFiled: June 7, 2001Date of Patent: October 28, 2003Assignee: Axcelis Technologies, Inc.Inventors: Qingyan Han, Ivan Berry, Palani Sakthivel, Ricky Ruffin, Mahmoud Dahimene
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Patent number: 6630406Abstract: An oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate. The process includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to the reactive species. The process can be used with carbon and/or hydrogen based low k dielectric materials.Type: GrantFiled: May 14, 2001Date of Patent: October 7, 2003Assignee: Axcelis TechnologiesInventors: Carlo Waldfried, Ivan Berry, Orlando Escorcia, Qingyuan Han, Palani Sakthivel
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Patent number: 6548416Abstract: A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and/or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.Type: GrantFiled: July 24, 2001Date of Patent: April 15, 2003Assignee: Axcelis Technolgoies, Inc.Inventors: Qingyuan Han, Ivan Berry, Palani Sakthivel, Carlo Waldfried
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Patent number: 6524936Abstract: A process for stripping a photoresist layer after exposure to an ion implantation process. The process includes subjecting a substrate having the ion implanted photoresist layer thereon to a UV radiation exposure and subsequently removing the ion implanted photoresist by conventional stripping processes.Type: GrantFiled: December 22, 2000Date of Patent: February 25, 2003Assignee: Axcelis Technologies, Inc.Inventors: John Scott Hallock, Alan Frederick Becknell, Palani Sakthivel
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Publication number: 20030032300Abstract: An oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate. The process includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to the reactive species. The process can be used with carbon and/or hydrogen based low k dielectric materials.Type: ApplicationFiled: May 14, 2001Publication date: February 13, 2003Inventors: Carlo Waldfried, Ivan Berry, Orlando Escorcia, Qingyuan Han, Palani Sakthivel
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Publication number: 20030022511Abstract: A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and/or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.Type: ApplicationFiled: July 24, 2001Publication date: January 30, 2003Inventors: Qingyuan Han, Ivan Berry, Palani Sakthivel, Carlo Waldfried
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Patent number: 6492186Abstract: A method for determining an endpoint for an oxygen free plasma stripping process for use in semiconductor wafer processing. The method comprises exciting a gas composition containing a nitrogen gas and a reactive gas to form the oxygen free plasma. The oxygen free plasma reacts with a substrate having a photoresist and/or residues thereon to produce emitted light signals corresponding to an oxygen free reaction product. The endpoint is determined by optically measuring a primary emission signal of the oxygen free reaction product at a wavelength of about 387 nm. The endpoint is determined when the plasma no longer reacts with the photoresist and/or residues on the substrate to produce the emitted light at about 387 nm, an indication that the photoresist and/or residues have been removed from the wafer. Secondary emission signals of the oxygen free reaction product at about 358 nm and 431 nm can also be monitored for determining the endpoint.Type: GrantFiled: November 5, 1999Date of Patent: December 10, 2002Assignee: Eaton CorporationInventors: Qingyan Han, Palani Sakthivel, Ricky Ruffin, Andre Cardoso
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Publication number: 20020151156Abstract: A process for stripping a photoresist layer after exposure to an ion implantation process. The process includes subjecting a substrate having the ion implanted photoresist layer thereon to a UV radiation exposure and subsequently removing the ion implanted photoresist by conventional stripping processes.Type: ApplicationFiled: December 22, 2000Publication date: October 17, 2002Inventors: John Scott Hallock, Alan Frederick Becknell, Palani Sakthivel
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Publication number: 20010027016Abstract: A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles. The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.Type: ApplicationFiled: June 7, 2001Publication date: October 4, 2001Applicant: Axcelis Technologies, Inc.Inventors: Qingyan Han, Ivan Berry, Palani Sakthivel, Ricky Ruffin, Mahmoud Dahimene
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Patent number: 6281135Abstract: A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles, The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.Type: GrantFiled: August 5, 1999Date of Patent: August 28, 2001Assignee: Axcelis Technologies, Inc.Inventors: Qingyuan Han, Ivan Berry, Palani Sakthivel, Ricky Ruffin, Mammoud Dahimene