Patents by Inventor Panayotis Andricacos
Panayotis Andricacos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20050167780Abstract: An inductor and a method of forming and the inductor, the method including: (a) providing a semiconductor substrate; (b) forming a dielectric layer on a top surface of the substrate; (c) forming a lower trench in the dielectric layer; (d) forming a resist layer on a top surface of the dielectric layer; (e) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and (f) completely filling the lower trench at least partially filling the upper trench with a conductor in order to form the inductor. The inductor including a top surface, a bottom surface and sidewalls, a lower portion of said inductor extending a fixed distance into a dielectric layer formed on a semiconductor substrate and an upper portion extending above said dielectric layer; and means to electrically contact said inductor.Type: ApplicationFiled: January 29, 2004Publication date: August 4, 2005Applicant: International Business Machines CorporationInventors: Daniel Edelstein, Panayotis Andricacos, John Cotte, Hariklia Deligianni, John Magerlein, Kevin Petrarca, Kenneth Stein, Richard Volant
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Publication number: 20050156695Abstract: A microelectromechanical switch including: at least one pair of actuator electrodes; at least one input electrode and at least one output electrode for input and output, respectively, of a radio frequency signal; and a beam movable by an attraction between the at least one pair of actuator electrodes, the movable beam having at least a portion electrically connected to the at least one input electrode and to the at least one output electrode when moved by the attraction between the at least one pair of actuator electrodes to make an electrical connection between the at least one input and output electrodes; wherein the at least one pair of actuator electrodes are electrically isolated from each of the at least one input and output electrodes. The microelectromechanical switch can be configured in single or multiple-poles and/or single or multiple throws.Type: ApplicationFiled: February 8, 2005Publication date: July 21, 2005Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Panayotis Andricacos, L. Buchwalter, Hariklia Deligianni, Robert Groves, Christopher Jahnes, Jennifer Lund, Michael Meixner, David Seeger, Timothy Sullivan, Ping-Chuan Wang
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Publication number: 20050095852Abstract: Disclosed is a method for making a metal gate for a FET, wherein the metal gate comprises at least some material deposited by electroplating as well as an FET device comprising a metal gate that is at least partially plated. Further disclosed is a method for making a metal gate for a FET wherein the metal gate comprises at least some plated material and the method comprises the steps of: selecting a substrate having a top surface and a recessed region; conformally depositing a thin conductive seed layer on the substrate; and electroplating a filler gate metal on the seed layer to fill and overfill the recessed region.Type: ApplicationFiled: October 29, 2003Publication date: May 5, 2005Applicant: International Business MachinesInventors: Katherine Saenger, Cyril Cabral, Emanuel Cooper, Hariklia Deligianni, Panayotis Andricacos, Philippe Vereecken
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Publication number: 20050037608Abstract: Flared and non-flared metallized deep vias having aspect ratios of about 2 or greater are provided. Blind vias have been fabricated in silicon substrates up to a depth of about 300 microns, and flared through vias have been fabricated up to about 750 microns, the approximate thickness of a silicon substrate wafer, enabling the formation of electrical connections at either or both ends of a via. In spite of the depth and high aspect ratios attainable, the etched vias are completely filled with plated copper conductor, completing the formation of deep vias and allowing fuller use of both sides of the substrate.Type: ApplicationFiled: August 13, 2003Publication date: February 17, 2005Inventors: Panayotis Andricacos, Emanuel Cooper, Timothy Dalton, Hariklia Deligianni, Daniel Guidotti, Keith Kwietniak, Michelle Steen, Cornelia Tsang
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Publication number: 20050006777Abstract: An interconnection structure comprising a substrate having a dielectric layer with a via opening therein; a barrier layer located in the via opening; an interlayer of palladium and/or platinum on the barrier layer; and a layer of copper or copper alloy on the interlayer is provided.Type: ApplicationFiled: August 6, 2004Publication date: January 13, 2005Applicant: International Business Machines CorporationInventors: Panayotis Andricacos, Steven Boettcher, Fenton McFeely, Milan Paunovic
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Publication number: 20050007217Abstract: A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400°0 C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.Type: ApplicationFiled: July 8, 2003Publication date: January 13, 2005Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, Panayotis Andricacos, L. Buchwalter, John Cotte, Christopher Jahnes, Mahadevaiyer Krishnan, John Magerlein, Kenneth Stein, Richard Volant, James Tornello, Jennifer Lund
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Publication number: 20050006242Abstract: An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.Type: ApplicationFiled: July 10, 2003Publication date: January 13, 2005Applicant: International Business Machines CorporationInventors: Panayotis Andricacos, Dean Chung, Hariklia Deligianni, James Fluegel, Keith Kwietniak, Peter Locke, Darryl Restaino, Soon-Cheon Seo, Philippe Vereecken, Erick Walton
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Publication number: 20050001325Abstract: Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.Type: ApplicationFiled: July 3, 2003Publication date: January 6, 2005Applicant: International Business Machines CorporationInventors: Panayotis Andricacos, Shyng-Tsong Chen, John Cotte, Hariklia Deligianni, Mahadevaiyer Krishnan, Wei-Tsu Tseng, Philippe Vereecken
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Publication number: 20040108136Abstract: An interconnection structure comprising a substrate having a dielectric layer with a via opening therein; wherein the opening has an underlayer of cobalt and/or nickel therein, barrier layer of an alloy of cobalt and/or nickel; and tungsten is provided.Type: ApplicationFiled: December 4, 2002Publication date: June 10, 2004Applicant: International Business Machines CorporationInventors: Panayotis Andricacos, Steven H. Boettcher, Sandra G. Malhotra, Milan Paunovic, Craig Ransom
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Publication number: 20040069648Abstract: A conductive material is electroplated onto a platable resistive metal barrier layer(s) employing a plating bath optionally comprising a super filling additive and a suppressor, and by changing the current or voltage as a function of the area of plated metal. A structure is also provided that comprises a substrate, a platable metal barrier layer(s) located on the substrate and a relatively continuous uniform electroplated layer of a conductive material located on the platable resistive metal barrier layer.Type: ApplicationFiled: October 15, 2002Publication date: April 15, 2004Applicant: International Business Machines CorporationInventors: Panayotis Andricacos, Hariklia Deligianni, Wilma Jean Horkans, Keith T. Kwietniak, Michael Lane, Sandra G. Malhotra, Fenton Read McFeely, Conal Murray, Kenneth P. Rodbell, Philippe M. Vereecken
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Patent number: 6639488Abstract: Disclosed is a capacitive electrostatic MEMS RF switch comprised of a lower electrode that acts as both a transmission line and as an actuation electrode. Also, there is an array of one or more fixed beams above the lower electrode that is connected to ground. The lower electrode transmits the RF signal when the top beam or beams are up and when the upper beams are actuated and bent down, the transmission line is shunted to ground ending the RF transmission. A high dielectric constant material is used in the capacitive portion of the switch to achieve a high capacitance per unit area thus reducing the required chip area and enhancing the insertion loss characteristics in the non-actuated state. A gap between beam and lower electrode of less than 1 &mgr;m is incorporated in order to minimize the electrostatic potential (pull-in voltage) required to actuate the switch.Type: GrantFiled: September 7, 2001Date of Patent: October 28, 2003Assignee: IBM CorporationInventors: Hariklia Deligianni, Robert Groves, Christopher Jahnes, Jennifer L. Lund, Panayotis Andricacos, John Cotte, L. Paivikki Buchwalter, David Seeger, Raul E. Acosta
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Publication number: 20030048149Abstract: Disclosed is a capacitive electrostatic MEMS RF switch comprised of a lower electrode that acts as both a transmission line and as an actuation electrode. Also, there is an array of one or more fixed beams above the lower electrode that is connected to ground. The lower electrode transmits the RF signal when the top beam or beams are up and when the upper beams are actuated and bent down, the transmission line is shunted to ground ending the RF transmission. A high dielectric constant material is used in the capacitive portion of the switch to achieve a high capacitance per unit area thus reducing the required chip area and enhancing the insertion loss characteristics in the non-actuated state. A gap between beam and lower electrode of less than 1 &mgr;m is incorporated in order to minimize the electrostatic potential (pull-in voltage) required to actuate the switch.Type: ApplicationFiled: September 7, 2001Publication date: March 13, 2003Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, Robert Groves, Christopher Jahnes, Jennifer L. Lund, Panayotis Andricacos, John Cotte, L. Paivikki Buchwalter, David Seeger, Raul E. Acosta
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Patent number: 6416812Abstract: Copper is deposited onto a barrier layer such as tungsten from an electroless copper plating bath having a pH of at least 12.89 and a deposition rate of 50 nanometers/minute or less.Type: GrantFiled: June 29, 2000Date of Patent: July 9, 2002Assignee: International Business Machines CorporationInventors: Panayotis Andricacos, Steven H. Boettcher, Fenton Read McFeely, Milan Paunovic
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Patent number: 6395164Abstract: An electroless touch-up process for repairing copper metallization deposited in dual damascene structures with high aspect ratios. An initial copper strike layer is produced by directional deposition techniques such that discontinuous sidewall coverage occurs. An evolutionary electroless touch-up process then proceeds to conformally grow the copper layer on all surfaces. The result of the evolutionary process is to produce a continuous copper strike layer that can be used with conventional electroplating techniques.Type: GrantFiled: October 7, 1999Date of Patent: May 28, 2002Assignee: International Business Machines CorporationInventors: Panayotis Andricacos, James E. Fluegel, John G. Gaudiello, Ronald D. Goldblatt, Sandra G. Malhotra, Milan Paunovic
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Patent number: 6323127Abstract: A noble metal electrode structure having a cup-like, approximately cylindrical shape, roughened inner and outer surfaces, and a surface area of at least 1 sq. micron or greater is provided as well as a capacitor which includes the noble metal electrode as a bottom electrode. The high-surface area noble metal electrode is formed by electroplating into annular channels that have roughened sidewalls formed by the oxidation of vapor-deposited Si nuclei.Type: GrantFiled: June 22, 2000Date of Patent: November 27, 2001Assignee: International Business Machines CorporationInventors: Panayotis Andricacos, Gregory Costrini, David Edward Kotecki, Katherine Lynn Saenger
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Patent number: 5312532Abstract: A multi-compartment electroplating system for electroplating two or more objects simultaneously such that the electrodeposited material is substantially uniform in thickness and composition. Electroplating solution is circulated between a reservoir and a multi-compartment tank which has one cathode-paddle-anode (CPA) assembly for each compartment. Each CPA assembly has an anode, a cathode adapted for holding a wafer and employing a single thieving electrode which covers all of the floor of the compartment not covered by the wafer, and a paddle. Also included is a cover which houses a single linear motor for driving all of the paddles in synchrony.Type: GrantFiled: January 15, 1993Date of Patent: May 17, 1994Assignee: International Business Machines CorporationInventors: Panayotis Andricacos, Moritz Branger, Robert M. Browne, John O. Dukovic, Benjamin W. B. Fu, Robert W. Hitzfeld, Matteo Flotta, Donald R. McKenna, Lubomyr T. Romankiw, Saeed Sahami