Patents by Inventor Parthiban Santhanam
Parthiban Santhanam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923873Abstract: In certain examples, methods and semiconductor structures are directed to an apparatus including a photon emitter such as an LED which operates over an emission wavelength range and a photo-voltaic device arranged relative to the photon emitter to provide index-matched optical coupling between the photo-voltaic device and the photon emitter for an emission wavelength range of the photon emitter.Type: GrantFiled: December 3, 2021Date of Patent: March 5, 2024Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Shanhui Fan, Bo Zhao, Sid Assawaworrarit, Parthiban Santhanam, Meir Orenstein
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Patent number: 11715809Abstract: Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.Type: GrantFiled: June 25, 2021Date of Patent: August 1, 2023Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Parthiban Santhanam, Shanhui Fan
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Publication number: 20220182070Abstract: In certain examples, methods and semiconductor structures are directed to an apparatus including a photon emitter such as an LED which operates over an emission wavelength range and a photo-voltaic device arranged relative to the photon emitter to provide index-matched optical coupling between the photo-voltaic device and the photon emitter for an emission wavelength range of the photon emitter.Type: ApplicationFiled: December 3, 2021Publication date: June 9, 2022Inventors: Shanhui Fan, Bo Zhao, Sid Assawaworrarit, Parthiban Santhanam, Meir Orenstein
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Publication number: 20210408318Abstract: Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.Type: ApplicationFiled: June 25, 2021Publication date: December 30, 2021Inventors: Parthiban Santhanam, Shanhui Fan
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Patent number: 10205046Abstract: Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<kBT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.Type: GrantFiled: June 26, 2017Date of Patent: February 12, 2019Assignee: Massachusetts Institute of TechnologyInventors: Parthiban Santhanam, Dodd Joseph Gray, Rajeev Jagga Ram
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Publication number: 20170294551Abstract: Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<kBT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.Type: ApplicationFiled: June 26, 2017Publication date: October 12, 2017Inventors: Parthiban Santhanam, Dodd Joseph GRAY, Rajeev Jagga RAM
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Patent number: 9722144Abstract: Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<kBT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.Type: GrantFiled: August 14, 2014Date of Patent: August 1, 2017Assignee: Massachusetts Institute of TechnologyInventors: Parthiban Santhanam, Dodd Joseph Gray, Rajeev Jagga Ram
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Patent number: 9557215Abstract: Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.Type: GrantFiled: August 16, 2013Date of Patent: January 31, 2017Assignee: Massachusetts Institute of TechnologyInventors: Parthiban Santhanam, Dodd Joseph Gray, Rajeev Jagga Ram
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Publication number: 20160298882Abstract: Solid state near-field radiative cooling from a cold emitter to a hot collector is provided. Two cases are considered. In the first case, the cold emitter is forward biased to drive heat flow from the cold emitter to the hot collector. A surface resonance of the collector is configured to enhance this cooling effect. In the second case, the hot collector is reverse biased to control heat flow from the cold emitter to the hot collector. A surface resonance of the emitter is configured to enhance this cooling effect.Type: ApplicationFiled: April 11, 2016Publication date: October 13, 2016Inventors: Kaifeng Chen, Parthiban Santhanam, Sunil Sandhu, Linxiao Zhu, Shanhui Fan
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Publication number: 20150311401Abstract: Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<kBT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.Type: ApplicationFiled: August 14, 2014Publication date: October 29, 2015Applicant: Massachusetts Institute of TechnologyInventors: Parthiban Santhanam, Dodd Joseph Gray, Rajeev Jagga Ram
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Publication number: 20140159582Abstract: Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<kBT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.Type: ApplicationFiled: August 16, 2013Publication date: June 12, 2014Inventors: Parthiban Santhanam, Dodd Joseph Gray, Rajeev Jagga Ram