Patents by Inventor Patricia A. Piacente

Patricia A. Piacente has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4998151
    Abstract: A multi-cellular power field effect semiconductor device includes a high conductivity layer of metal or a metal silicide disposed in intimate contact with the source region of the device. This high conductivity layer is self-aligned with respect to the aperture in the gate electrode through which the source region is diffused. The presence of this high conductivity layer allows a substantially smaller contact window to be employed for making contact between the final metallization and the source region. As a consequence, the aperture in the gate electrode and the cell size of the device can both be substantially reduced. The device has substantially improved operating characteristics. A method of producing the device is also described.
    Type: Grant
    Filed: April 13, 1989
    Date of Patent: March 5, 1991
    Assignee: General Electric Company
    Inventors: Charles S. Korman, Krishna Shenai, Bantval J. Baliga, Patricia A. Piacente, Bernard Gorowitz, Tat-Sing P. Chow, Manjin J. Kim
  • Patent number: 4985740
    Abstract: A multi-cellular power field effect semiconductor device includes a tungsten silicide/polysilicon/oxide gate electrode stack with low sheet resistance. Preferably, a layer of tungsten is also disposed in intimate contact with the source region of the device. This tunsten layer is self-aligned with respect to the aperture in the gate electrode through which the source region is diffused. The presence of this tungsten layer greatly reduces the resulting ohmic contact resistance to the region. If desired, a tunsten layer can also be disposed in contact with the drain region of the device, again, to lower ohmic contact resistance. The device has substantially improved operating characteristics. Novel processes for producing the device are also described.
    Type: Grant
    Filed: June 1, 1989
    Date of Patent: January 15, 1991
    Assignee: General Electric Company
    Inventors: Krishna Shenai, Bantval J. Baliga, Patricia A. Piacente, Charles S. Korman
  • Patent number: 4942449
    Abstract: A method for forming a field oxide isolation region for a field effect transistor for use in integrated circuit chip devices includes process steps which preserve planarity while at the same time providing an increased degree of radiation hardness. The bird's beak region of the device is provided with both thermally grown and deposited oxide layers in a planarity preserving process.
    Type: Grant
    Filed: March 28, 1988
    Date of Patent: July 17, 1990
    Assignee: General Electric Company
    Inventors: Ching-Yeu Wei, Patricia A. Piacente, Henry H. Woodbury
  • Patent number: 4427579
    Abstract: A nuclear fuel material green body of density from about 30 to 70% of theoretical density having tensile strenght and plasticity adequate to maintain the integrity of the body during processing leading to ultimate sintered condition is produced by adding an amine carbonate or carbamate or mixture thereof to a particulate mass of the nuclear fuel material under conditions resulting in reaction with the amine compound to form a water-soluble compound effective as a binder for the particulate material.
    Type: Grant
    Filed: December 17, 1981
    Date of Patent: January 24, 1984
    Assignee: General Electric Company
    Inventors: George L. Gaines, Jr., Patricia A. Piacente, William J. Ward, III, Peter C. Smith, Timothy J. Gallivan, Harry M. Laska