Abstract: A pipelined floating point processor including an add pipe for performing floating point additions is described. The add pipe includes a circuit to predict a normalization shift amount from examination of input operands, a circuit to determine the "Sticky bit" from the input operands, and a rounding adder which adds a pair of operands and rounds the result in a single pipeline stage operation. The rounding adder incorporates effects due to rounding in select logic for a series of carry select adders. The adder also aligns the datapath to permit economical storage and retrieval of floating point and integer operands for floating point or conversions operations. The floating point processor also includes in the adder pipeline a divider circuit include a quotient register having overflow quotient bit positions to detect the end of a division operation.

Abstract: A compressed vertical bipolar transistor configuration that eliminates one side of the standard symmetrical base contact, while also eliminating the requirement for a collector contact reach-thru. The bipolar transistor comprises: a collector layer; a base layer disposed over the collector layer; an emitter layer disposed over the base layer; a first sidewall insulating layer disposed adjacent to and in contact with one side of the emitter layer, the base layer, and at least a portion of the collector layer; a second sidewall insulating layer disposed adjacent to and in contact with another side of the emitter layer and at least a portion of the base layer; and a base contact extension layer formed from heavily doped semiconductor material of the same conductivity type as the base layer, said base contact extension layer being in contact with an extending laterally from another side of the base layer.

Abstract: A compressed vertical bipolar transistor configuration that eliminates one side of the standard symmetrical base contact, while also eliminating the requirement for a collector contact reach-thru. The bipolar transistor comprises: a collector layer; a base layer disposed over the collector layer; an emitter layer disposed over the base layer; a first sidewall insulating layer disposeed adjacent to and in contact with one side of the emitter layer, the base layer, and at least a portion of the collector layer; a second sidewall insulating layer disposed adjacent to and in contact with another side of the emitter layer and at least a portion of the base layer; and a base contact extension layer formed from heavily doped semiconductor material of the same conductivity type as the base layer, said base contact extension layer being in contact with and extending laterally from another side of the base layer.