Patents by Inventor Patricia May Mooney

Patricia May Mooney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8409974
    Abstract: A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.
    Type: Grant
    Filed: August 20, 2009
    Date of Patent: April 2, 2013
    Assignee: International Business Machines Corporation
    Inventors: Guy Moshe Cohen, Patricia May Mooney
  • Patent number: 7812340
    Abstract: A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.
    Type: Grant
    Filed: June 13, 2003
    Date of Patent: October 12, 2010
    Assignee: International Business Machines Corporation
    Inventors: Guy Moshe Cohen, Patricia May Mooney
  • Publication number: 20090309160
    Abstract: A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.
    Type: Application
    Filed: August 20, 2009
    Publication date: December 17, 2009
    Applicant: International Business Machines Corporation
    Inventors: Guy Moshe Cohen, Patricia May Mooney
  • Patent number: 7084431
    Abstract: A layered structure for forming electronic devices thereon is provided. The layered structure includes an over-shoot layer, Si1?yGey, within a relaxed Si1?xGex layer, wherein y=X+Z and Z is in the range from 0.01 to 0.1 and X is from 0.35 to 0.5. The over-shoot layer has a thickness that is less than its critical thickness.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: August 1, 2006
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Richard Hammond, Khalid EzzEldin Ismail, Steven John Koester, Patricia May Mooney, John A. Ott
  • Patent number: 6858502
    Abstract: A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility. The invention overcomes the problem of a limited hole mobility for a p-channel device with only a single compressively strained SiGe channel layer.
    Type: Grant
    Filed: November 20, 2001
    Date of Patent: February 22, 2005
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Richard Hammond, Khalid EzzEldin Ismail, Steven John Koester, Patricia May Mooney, John A. Ott
  • Publication number: 20040253792
    Abstract: A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.
    Type: Application
    Filed: June 13, 2003
    Publication date: December 16, 2004
    Applicant: International Business Machines Corporation
    Inventors: Guy Moshe Cohen, Patricia May Mooney
  • Publication number: 20040227154
    Abstract: A layered structure for forming electronic devices thereon is provided. The layered structure includes an over-shoot layer, Si1-yGey, within a relaxed Si1-xGex layer, wherein y=X+Z and Z is in the range from 0.01 to 0.1 and X is from 0.35 to 0.5. The over-shoot layer has a thickness that is less than its critical thickness.
    Type: Application
    Filed: April 26, 2004
    Publication date: November 18, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jack Oon Chu, Richard Hammond, Khalid EzzEldin Ismail, Steven John Koester, Patricia May Mooney, John A. Ott
  • Publication number: 20020125475
    Abstract: A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility. The invention overcomes the problem of a limited hole mobility for a p-channel device with only a single compressively strained SiGe channel layer.
    Type: Application
    Filed: November 20, 2001
    Publication date: September 12, 2002
    Inventors: Jack Oon Chu, Richard Hammond, Khalid Ezzeldin Ismail, Steven John Koester, Patricia May Mooney, John A. Ott
  • Patent number: 6350993
    Abstract: A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility. The invention overcomes the problem of a limited hole mobility for a p-channel device with only a single compressively strained SiGe channel layer.
    Type: Grant
    Filed: March 12, 1999
    Date of Patent: February 26, 2002
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Richard Hammond, Khalid EzzEldin Ismail, Steven John Koester, Patricia May Mooney, John A. Ott