Patents by Inventor Patricius Aloysius Jacobus Tinnemans
Patricius Aloysius Jacobus Tinnemans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240027918Abstract: Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.Type: ApplicationFiled: May 27, 2021Publication date: January 25, 2024Applicant: ASML Netherlands B.V.Inventors: Simon Gijsbert Josephus MATHIJSSEN, Patricius Aloysius Jacobus TINNEMANS, Arie Jeffrey DEN BOEF, Kaustuve BHATTACHARYYA, Samee Ur REHMAN
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Publication number: 20230273255Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.Type: ApplicationFiled: May 5, 2023Publication date: August 31, 2023Applicant: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Patrick Warnaar, Vasco Tomas Tenner, Maurits Van Der Schaar
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Patent number: 11709436Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.Type: GrantFiled: August 30, 2021Date of Patent: July 25, 2023Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Patrick Warnaar, Vasco Tomas Tenner, Maurits Van Der Schaar
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Patent number: 11650047Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.Type: GrantFiled: May 7, 2021Date of Patent: May 16, 2023Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Vasco Tomas Tenner, Arie Jeffrey Den Boef, Hugo Augustinus Joseph Cramer, Patrick Warnaar, Grzegorz Grzela, Martin Jacobus Johan Jak
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Publication number: 20230141495Abstract: Disclosed is a method of determining a sampling scheme. The method comprises obtaining a parallel sensor description and identifying a plurality of candidate acquisition configurations based on said parallel sensor description and potential metrology locations. Each of said candidate acquisition configurations is evaluated in terms of an evaluation metric and a candidate acquisition configuration is selected based on said evaluation. The corresponding metrology locations for the selected acquisition configuration is added to the sampling scheme.Type: ApplicationFiled: March 10, 2021Publication date: May 11, 2023Applicant: ASML Netherlands B.V.Inventors: Hugo Augustinus Joseph CRAMER, Patricius Aloysius Jacobus TINNEMANS, Jeroen Arnoldus Leonardus Johannes RAAYMAKERS, Jochem Sebastiaan WILDENBERG
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Publication number: 20230064193Abstract: Disclosed is a method of measuring a periodic structure on a substrate with illumination radiation having at least one wavelength, the periodic structure having at least one pitch. The method comprises configuring, based on a ratio of said pitch and said wavelength, one or more of: an illumination aperture profile comprising one or more illumination regions in Fourier space; an orientation of the periodic structure for a measurement; and a detection aperture profile comprising one or more separated detection regions in Fourier space. This configuration is such that: i) diffracted radiation of at least a pair of complementary diffraction orders is captured within the detection aperture profile, and ii) said diffracted radiation fills at least 80% of the one or more separated detection regions. The periodic structure is measured while applying the configured one or more of illumination aperture profile, detection aperture profile and orientation of the periodic structure.Type: ApplicationFiled: January 20, 2021Publication date: March 2, 2023Applicant: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Patrick WARNAAR, Vasco Tomas TENNER, Hugo Augustinus Joseph CRAMER, Bram Antonius Gerardus LOMANS, Bastiaan Lambertus Wilhelmus Marinus VAN DE VEN, Ahmet Burak CUNBUL, Alexander Prasetya KONIJNENBERG
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Publication number: 20230062585Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.Type: ApplicationFiled: July 1, 2022Publication date: March 2, 2023Applicant: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Arie Jeffrey DEN BOEF, Armand Eugene Albert KOOLEN, Nitesh PANDEY, Vasco Tomas TENNER, Willem Marie Julia Marcel COENE, Patrick WARNAAR
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Publication number: 20230017491Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.Type: ApplicationFiled: December 3, 2020Publication date: January 19, 2023Applicants: ASML NETHERLANDS B.V., ASML HOLDING N.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Igor Matheus Petronalla AARTS, Kaustuve BHATTACHARYYA, Ralph BRINKHOF, Leendert Jan KARSSEMEIJER, Stefan Carolus Jacobus A KEIJ, Haico Victor KOK, Simon Gijsbert Josephus MATHIJSSEN, Henricus Johannes Lambertu MEGENS, Samee Ur REHMAN
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Publication number: 20220350260Abstract: Disclosed is a method for a metrology measurement on an area of a substrate comprising at least a portion of a target structure. The method comprises receiving a radiation information representing a portion of radiation scattered by the are, and using a filter in a Fourier domain for removing or suppressing at least a portion of the received radiation information that does not relate to radiation that has been scattered by the target structure for obtaining a filtered radiation information for the metrology measurement, wherein characteristics of the filter are based on target information about the target structure.Type: ApplicationFiled: September 3, 2020Publication date: November 3, 2022Applicants: ASML Holding N.V., ASML Netherlands B.V.Inventors: Armand Eugene Albert, Justin Lloyd KREUZER, Nikhil MEHTA, Patrick WARNAAR, Vasco Tomas TENNER, Patricius Aloysius Jacobus TINNEMANS, Hugo Augustinus Joseph CRAMER
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Patent number: 11415900Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.Type: GrantFiled: September 16, 2020Date of Patent: August 16, 2022Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Arie Jeffrey Den Boef, Armand Eugene Albert Koolen, Nitesh Pandey, Vasco Tomas Tenner, Willem Marie Julia Marcel Coene, Patrick Warnaar
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Patent number: 11378893Abstract: A lithographic apparatus is described having a liquid supply system configured to at least partly fill a space between a projection system of the lithographic apparatus and a substrate with liquid, a barrier member arranged to substantially contain the liquid within the space, and a heater.Type: GrantFiled: November 13, 2020Date of Patent: July 5, 2022Assignee: ASML NETHERLANDS B.V.Inventors: Theodorus Petrus Maria Cadee, Johannes Henricus Wilhelmus Jacobs, Nicolaas Ten Kate, Erik Roelof Loopstra, Aschwin Lodewijk Hendricus Johannes Van Meer, Jeroen Johannes Sophia Maria Mertens, Christianus Gerardus Maria De Mol, Marcel Johannus Elisabeth Hubertus Muitjens, Antonius Johannus Van Der Net, Joost Jeroen Ottens, Johannes Anna Quaedackers, Maria Elisabeth Reuhman-Huisken, Marco Koert Stavenga, Patricius Aloysius Jacobus Tinnemans, Martinus Cornelis Maria Verhagen, Jacobus Johannus Leonardus Hendricus Verspay, Frederik Eduard De Jong, Koen Goorman, Boris Menchtchikov, Herman Boom, Stoyan Nihtianov, Richard Moerman, Martin Frans Pierre Smeets, Bart Leonard Peter Schoondermark, Franciscus Johannes Joseph Janssen, Michel Riepen
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Publication number: 20210389365Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.Type: ApplicationFiled: August 30, 2021Publication date: December 16, 2021Applicant: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Patrick WARNAAR, Vasco Tomas TENNER, Maurits VAN DER SCHAAR
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Patent number: 11181836Abstract: A method for determining substrate deformation includes obtaining first measurement data associated with mark positions, from measurements of a plurality of substrates; obtaining second measurement data associated with mark positions, from measurements of the plurality of substrates; determining a mapping between the first measurement data and the second measurement data; and decomposing the mapping, by calculating an eigenvalue decomposition for the mapping, to separately determine a first deformation (e.g. mark deformation) that scales differently from a second deformation (e.g. substrate deformation) in the mapping between the data. The steps of determining a mapping and decomposing the mapping may be performed together using non-linear optimization.Type: GrantFiled: May 28, 2018Date of Patent: November 23, 2021Assignee: ASML Netherlands B.V.Inventors: Edo Maria Hulsebos, Patricius Aloysius Jacobus Tinnemans, Franciscus Godefridus Casper Bijnen
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Publication number: 20210349395Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.Type: ApplicationFiled: July 19, 2021Publication date: November 11, 2021Applicant: ASML NETHERLANDS B.VInventors: Patrick WARNAAR, Patricius Aloysius Jacobus Tinnemans, Grzegorz Grzela, Everhardus Cornelis Mos, Wim Tjibbo Tel, Marinus Jochemsen, Bart Peter Bert Segers, Frank Staals
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Publication number: 20210325174Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.Type: ApplicationFiled: May 7, 2021Publication date: October 21, 2021Applicant: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Vasco Tomas Tenner, Arie Jeffrey Den Boef, Hugo Augustinus Joseph Cramer, Patrick Warnaar, Grzegorz Grzela, Martin Jacobus Johan Jak
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Patent number: 11125806Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.Type: GrantFiled: July 31, 2019Date of Patent: September 21, 2021Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Patrick Warnaar, Vasco Tomas Tenner, Maurits Van der Schaar
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Patent number: 11067902Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.Type: GrantFiled: July 11, 2018Date of Patent: July 20, 2021Assignee: ASML Netherlands B.V.Inventors: Patrick Warnaar, Patricius Aloysius Jacobus Tinnemans, Grzegorz Grzela, Everhardus Cornelis Mos, Wim Tjibbo Tel, Marinus Jochemsen, Bart Peter Bert Segers, Frank Staals
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Patent number: 11029610Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.Type: GrantFiled: September 4, 2018Date of Patent: June 8, 2021Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Edo Maria Hulsebos, Henricus Johannes Lambertus Megens, Ahmet Koray Erdamar, Loek Johannes Petrus Verhees, Willem Seine Christian Roelofs, Wendy Johanna Martina Van De Ven, Hadi Yagubizade, Hakki Ergün Cekli, Ralph Brinkhof, Tran Thanh Thuy Vu, Maikel Robert Goosen, Maaike Van T Westeinde, Weitian Kou, Manouk Rijpstra, Matthijs Cox, Franciscus Godefridus Casper Bijnen
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Patent number: 11022902Abstract: The invention relates to a sensor comprising: a radiation source to emit radiation having a coherence length towards a sensor target; and a polarizing beam splitter to split radiation diffracted by the sensor target into radiation with a first polarization state and radiation with a second polarization state, wherein the first polarization state is orthogonal to the second polarization state, and wherein the sensor is configured such that after passing the polarizing beam splitter radiation with the first polarization state has an optical path difference relative to radiation with the second polarization state that is larger than the coherence length.Type: GrantFiled: May 14, 2018Date of Patent: June 1, 2021Assignee: ASML Netherlands B.VInventors: Arie Jeffrey Den Boef, Patricius Aloysius Jacobus Tinnemans, Haico Victor Kok, William Peter Van Drent, Sebastianus Adrianus Goorden
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Publication number: 20210149316Abstract: A method for determining substrate deformation includes obtaining first measurement data associated with mark positions, from measurements of a plurality of substrates; obtaining second measurement data associated with mark positions, from measurements of the plurality of substrates; determining a mapping between the first measurement data and the second measurement data; and decomposing the mapping, by calculating an eigenvalue decomposition for the mapping, to separately determine a first deformation (e.g. mark deformation) that scales differently from a second deformation (e.g. substrate deformation) in the mapping between the data. The steps of determining a mapping and decomposing the mapping may be performed together using non-linear optimization.Type: ApplicationFiled: May 28, 2018Publication date: May 20, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Edo Maria HULSEBOS, Patricius Aloysius Jacobus TINNEMANS, Franciscus Godefridus Casper BIJNEN