Patents by Inventor Pau-Chung Lin

Pau-Chung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9312258
    Abstract: A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source/drain regions disposed at two sides of the first gate structure. A first source/drain to gate distance is between each first source/drain region and the first gate structure. The second transistor includes a second gate structure and two source/drain doped regions disposed at two side of the second gate structure. A second source/drain to gate distance is between each second source/drain region and the second gate structure. The first source/drain to gate distance is smaller than the second source/drain to gate distance.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: April 12, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Guang-Yaw Hwang, Ling-Chun Chou, I-Chang Wang, Shin-Chuan Huang, Jiunn-Hsiung Liao, Shin-Chi Chen, Pau-Chung Lin, Chiu-Hsien Yeh, Chin-Cheng Chien, Chieh-Te Chen
  • Publication number: 20130292775
    Abstract: A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source/drain regions disposed at two sides of the first gate structure. A first source/drain to gate distance is between each first source/drain region and the first gate structure. The second transistor includes a second gate structure and two source/drain doped regions disposed at two side of the second gate structure. A second source/drain to gate distance is between each second source/drain region and the second gate structure. The first source/drain to gate distance is smaller than the second source/drain to gate distance.
    Type: Application
    Filed: July 8, 2013
    Publication date: November 7, 2013
    Inventors: Guang-Yaw Hwang, Ling-Chun Chou, I-Chang Wang, Shin-Chuan Huang, Jiunn-Hsiung Liao, Shin-Chi Chen, Pau-Chung Lin, Chiu-Hsien Yeh, Chin-Cheng Chien, Chieh-Te Chen
  • Patent number: 8552503
    Abstract: A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source/drain regions disposed at two sides of the first gate structure. A first source/drain to gate distance is between each first source/drain region and the first gate structure. The second transistor includes a second gate structure and two source/drain doped regions disposed at two side of the second gate structure. A second source/drain to gate distance is between each second source/drain region and the second gate structure. The first source/drain to gate distance is smaller than the second source/drain to gate distance.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: October 8, 2013
    Assignee: United Microelectronics Corp.
    Inventors: Guang-Yaw Hwang, Ling-Chun Chou, I-Chang Wang, Shin-Chuan Huang, Jiunn-Hsiung Liao, Shin-Chi Chen, Pau-Chung Lin, Chiu-Hsien Yeh, Chin-Cheng Chien, Chieh-Te Chen
  • Publication number: 20120132996
    Abstract: A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source/drain regions disposed at two sides of the first gate structure. A first source/drain to gate distance is between each first source/drain region and the first gate structure. The second transistor includes a second gate structure and two source/drain doped regions disposed at two side of the second gate structure. A second source/drain to gate distance is between each second source/drain region and the second gate structure. The first source/drain to gate distance is smaller than the second source/drain to gate distance.
    Type: Application
    Filed: November 30, 2010
    Publication date: May 31, 2012
    Inventors: Guang-Yaw Hwang, Ling-Chun Chou, I-Chang Wang, Shin-Chuan Huang, Jiunn-Hsiung Liao, Shin-Chi Chen, Pau-Chung Lin, Chiu-Hsien Yeh, Chin-Cheng Chien, Chieh-Te Chen