Patents by Inventor Paul A Lauro

Paul A Lauro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200144564
    Abstract: A method for forming a battery structure includes texturing an anode packaging material to form a first textured surface, depositing one or more metal layers including an anode metal on the first textured surface and forming a separator on the anode metal. It also includes texturing a cathode packaging material to form a second textured surface, depositing a cathode metal on the second textured surface, and forming an electrolyte binder paste on the cathode metal, which contacts the separator with any gap being filled with electrolyte.
    Type: Application
    Filed: January 2, 2020
    Publication date: May 7, 2020
    Inventors: Paul S. Andry, Paul A. Lauro, Jae-Woong Nah, Adinath Narasgond, Robert J. Polastre, Bucknell C. Webb
  • Patent number: 10581037
    Abstract: A battery structure includes an anode packaging material having a first textured surface and an anode metal formed on the first textured surface. A separator is formed on the anode metal. A cathode packaging material includes a second textured surface. A cathode metal is formed on the second textured surface. An active cathode paste is formed on the cathode metal and brought into contact with the separator such that any gap is filled with electrolyte.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: March 3, 2020
    Assignee: International Business Machines Corporation
    Inventors: Paul S. Andry, Paul A. Lauro, Jae-Woong Nah, Adinath Narasgond, Robert J. Polastre, Bucknell C. Webb
  • Publication number: 20190296113
    Abstract: A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer.
    Type: Application
    Filed: May 29, 2019
    Publication date: September 26, 2019
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Patent number: 10424644
    Abstract: A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: September 24, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Patent number: 10249792
    Abstract: A method of producing a semiconductor device includes forming a stack including a semiconductor material having a Group III nitride semiconductor material formed on a growth substrate, a protective layer formed over the Group III nitride semiconductor material, and a handle layer and a stressor layer formed over the protective layer. The stack is spalled to separate the growth substrate from the stack.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: April 2, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Patent number: 10147694
    Abstract: Solder bumps are provided on round wafers through the use of injection molded solder. Copper pillars or ball limiting metallurgy are formed over I/O pads within the channels of a patterned mask layer. Solder is injected over the pillars or BLM, filling the channels. Molten solder can be injected in cavities formed in round wafers without leakage using a carrier assembly that accommodates wafers that have been previously subjected to mask layer deposition and patterning. One such carrier assembly includes an elastomeric body portion having a round recess, the walls of the recess forming a tight seal with the round wafer. Other carrier assemblies employ adhesives applied around the peripheral edges of the wafers to ensure sealing between the carrier assemblies and wafers.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: December 4, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Bing Dang, Michael A. Gaynes, Paul A. Lauro, Jae-Woong Nah
  • Patent number: 10026618
    Abstract: Methods for removing a material layer from a base substrate utilizing spalling in which mode III stress, i.e., the stress that is perpendicular to the fracture front created in the base substrate, during spalling is reduced. The substantial reduction of the mode III stress during spalling results in a spalling process in which the spalled material has less surface roughness at one of its' edges as compared to prior art spalling processes in which the mode III stress is present and competes with spalling.
    Type: Grant
    Filed: February 2, 2017
    Date of Patent: July 17, 2018
    Assignees: International Business Machines Corporation, KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Ning Li, Devendra K. Sadana, Katherine L. Saenger, Ibrahim Alhomoudi
  • Patent number: 10020418
    Abstract: Techniques for integrating spalling into layer transfer processes involving optical device semiconductor materials are provided. In one aspect, a layer transfer method for an optical device semiconductor material includes forming the optical device semiconductor material on a first substrate; depositing a metal stressor layer on top of the optical device semiconductor material; attaching a first handle layer to the metal stressor layer; removing the optical device semiconductor material from the first substrate by pulling the first handle layer away from the first substrate; attaching a second handle layer to the optical device semiconductor material; removing the first handle layer from the stack; and forming a second substrate on the stressor layer. Vertical LED devices and techniques for formation thereof are also provided.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: July 10, 2018
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Patent number: 9929313
    Abstract: Described herein is a method for manufacturing a stack of semiconductor materials in which a growth substrate is separated from the stack after a semiconductor material, e.g., a Group III nitride semiconductor material, is grown on the substrate. The separation is effected in a spalling procedure in which spalling-facilitating layers are deposited over a protective cap layer that is formed over the Group III-nitride semiconductor material. Such spalling-facilitating layers may include a handle layer, a stressor layer, and an optional adhesion layer. The protective cap layer protects the Group III-nitride from being damaged by the depositing of one or more of the spalling-facilitating layers. After spalling to remove the growth substrate, additional processing steps are taken to provide a semiconductor device that includes undamaged semiconductor material. In one arrangement, the semiconductor material is GaN and includes p-doped GaN region that was undamaged during manufacturing.
    Type: Grant
    Filed: November 16, 2016
    Date of Patent: March 27, 2018
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Patent number: 9918382
    Abstract: A handle substrate having at least one metallization region is provided on a stressor layer that is located above a base substrate such that the at least one metallization region is in contact with a surface of the stressor layer. An upper portion of the base substrate is spalled, i.e., removed, to provide a structure comprising, from bottom to top, a spalled material portion of the base substrate, the stressor layer and the handle substrate containing the at least one metallization region in contact with the surface of the stressor layer.
    Type: Grant
    Filed: July 11, 2017
    Date of Patent: March 13, 2018
    Assignees: International Business Machines Corporation, KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY
    Inventors: Turki bin Saud bin Mohammed Al-Saud, Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Publication number: 20180047875
    Abstract: A method of producing a semiconductor device includes forming a stack including a semiconductor material having a Group III nitride semiconductor material formed on a growth substrate, a protective layer formed over the Group III nitride semiconductor material, and a handle layer and a stressor layer formed over the protective layer. The stack is spalled to separate the growth substrate from the stack.
    Type: Application
    Filed: October 24, 2017
    Publication date: February 15, 2018
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Publication number: 20170311436
    Abstract: A handle substrate having at least one metallization region is provided on a stressor layer that is located above a base substrate such that the at least one metallization region is in contact with a surface of the stressor layer. An upper portion of the base substrate is spalled, i.e., removed, to provide a structure comprising, from bottom to top, a spalled material portion of the base substrate, the stressor layer and the handle substrate containing the at least one metallization region in contact with the surface of the stressor layer.
    Type: Application
    Filed: July 11, 2017
    Publication date: October 26, 2017
    Inventors: Turki bin Saud bin Mohammed Al-Saud, Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Publication number: 20170294517
    Abstract: A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer.
    Type: Application
    Filed: June 22, 2017
    Publication date: October 12, 2017
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Publication number: 20170256759
    Abstract: A battery structure includes an anode packaging material having a first textured surface and an anode metal formed on the first textured surface. A separator is formed on the anode metal. A cathode packaging material includes a second textured surface. A cathode metal is formed on the second textured surface. An active cathode paste is formed on the cathode metal and brought into contact with the separator such that any gap is filled with electrolyte.
    Type: Application
    Filed: March 4, 2016
    Publication date: September 7, 2017
    Inventors: Paul S. Andry, Paul A. Lauro, Jae-Woong Nah, Adinath Narasgond, Robert J. Polastre, Bucknell C. Webb
  • Patent number: 9748353
    Abstract: A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: August 29, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Publication number: 20170222090
    Abstract: Described herein is a method for manufacturing a stack of semiconductor materials in which a growth substrate is separated from the stack after a semiconductor material, e.g., a Group III nitride semiconductor material, is grown on the substrate. The separation is effected in a spalling procedure in which spalling-facilitating layers are deposited over a protective cap layer that is formed over the Group III-nitride semiconductor material. Such spalling-facilitating layers may include a handle layer, a stressor layer, and an optional adhesion layer. The protective cap layer protects the Group III-nitride from being damaged by the depositing of one or more of the spalling-facilitating layers. After spalling to remove the growth substrate, additional processing steps are taken to provide a semiconductor device that includes undamaged semiconductor material. In one arrangement, the semiconductor material is GaN and includes p-doped GaN region that was undamaged during manufacturing.
    Type: Application
    Filed: November 16, 2016
    Publication date: August 3, 2017
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Patent number: 9722039
    Abstract: According to an embodiment of the present invention, a method for fabricating a semiconductor device comprises depositing a transition layer on a substrate, depositing GaN material on the transition layer, forming a contact on the GaN material, depositing a stressor layer on the GaN material, separating the transition layer and the substrate from the GaN material, patterning and removing portions of the GaN material to expose portions of the stressor layer.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: August 1, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Patent number: 9713250
    Abstract: A handle substrate having at least one metallization region is provided on a stressor layer that is located above a base substrate such that the at least one metallization region is in contact with a surface of the stressor layer. An upper portion of the base substrate is spalled, i.e., removed, to provide a structure comprising, from bottom to top, a spalled material portion of the base substrate, the stressor layer and the handle substrate containing the at least one metallization region in contact with the surface of the stressor layer.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: July 18, 2017
    Assignees: International Business Machines Corporation, KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY
    Inventors: Turki bin Saud bin Mohammed Al-Saud, Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Publication number: 20170194449
    Abstract: A method of making a GaN device includes: forming a GaN substrate; forming a plurality of spaced-apart first metal contacts directly on the GaN substrate; forming a layer of insulating GaN on the exposed portions of the upper surface; forming a stressor layer on the contacts and the layer of insulating GaN; forming a handle substrate on the first surface of the stressor layer; spalling the GaN substrate that is located beneath the stressor layer to separate a layer of GaN and removing the handle substrate; bonding the stressor layer to a thermally conductive substrate; forming a plurality of vertical channels through the GaN to define a plurality of device structures; removing the exposed portions of the layer of insulating GaN to electrically isolate the device structures; forming an ohmic contact layer on the second surface; and forming second metal contacts on the ohmic contact layer.
    Type: Application
    Filed: December 31, 2015
    Publication date: July 6, 2017
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana
  • Publication number: 20170194456
    Abstract: According to an embodiment of the present invention, a method for fabricating a semiconductor device comprises depositing a transition layer on a substrate, depositing GaN material on the transition layer, forming a contact on the GaN material, depositing a stressor layer on the GaN material, separating the transition layer and the substrate from the GaN material, patterning and removing portions of the GaN material to expose portions of the stressor layer.
    Type: Application
    Filed: December 31, 2015
    Publication date: July 6, 2017
    Inventors: Stephen W. Bedell, Keith E. Fogel, Paul A. Lauro, Devendra K. Sadana