Abstract: A flexible unitary mask has a plurality of through holes. A substrate has a plurality of wettable pads in recessed regions defining volumes. The through holes are aligned with the wettable pads. Molten solder is directly injected through the through holes of the flexible unitary mask into the volumes with the wettable pads, such that the through holes and the volumes with the wettable pads are filled with solder. The solder is allowed to solidify, forming a plurality of solder structures adhered to the wettable pads. The flexible unitary mask is peeled from the substrate after the solder has solidified.

Abstract: A portion of compliant material includes four walls defining a slot. The slot has a relatively large cross-section end in fluid communication with a solder reservoir, and also has a relatively small cross-section end opposed to the relatively large cross-section end. The slot has a generally elongate rectangular shape when viewed in plan, with a length perpendicular to a scan direction, a width, parallel to the scan direction, associated with the relatively large cross section end, and a width, parallel to the scan direction, associated with the relatively small cross section end. The slot is configured in the portion of compliant material such that the relatively small cross-section end of the slot normally remains substantially closed, but locally opens sufficiently to dispense solder from the reservoir when under fluid pressure and locally unsupported by a workpiece. Methods of operation and fabrication are also disclosed.

Abstract: The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.

Abstract: A method to minimize edge-related substrate breakage during spalling using an edge-exclusion region where the stressor layer is either non-present (excluded either during deposition or removed afterwards) or present but significantly non-adhered to the substrate surface in the exclusion region is provided. In one embodiment, the method includes forming an edge exclusion material on an upper surface and near an edge of a base substrate. A stressor layer is then formed on exposed portions of the upper surface of the base substrate and atop the edge exclusion material, A portion of the base substrate that is located beneath the stressor layer and which is not covered by the edge exclusion material is then spalled.

Abstract: A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.

Abstract: The present disclosure provides a method for forming two device wafers starting from a single base substrate. The method includes first providing a structure which includes a base substrate with device layers located on, or within, a topmost surface and a bottommost surface of the base substrate. The base substrate may have double side polished surfaces. The structure including the device layers is spalled in a region within the base substrate that is between the device layers. The spalling provides a first device wafer including a portion of the base substrate and one of the device layers, and a second device wafer including another portion of the base substrate and the other of the device layer.

Abstract: An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

Abstract: Manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. The stress layer may comprise a flexible material.

Abstract: The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.

Abstract: Imparting a controlled amount of stress in an assembly comprising a semiconductor circuit on a substrate comprises depositing a tensile stressed metal film stressor layer onto the surface of the circuit. Establishing a fracture region below electrically active regions of the circuit, adhering a foil handle to the assembly and pulling it away from the assembly induces mechanical fracture in the fracture region below the electrically active regions. The mechanical fracture propagates parallel and laterally to the surface of the substrate and below the circuit to produce a thin flexible circuit on a residual substrate. The circuit is under compressive strain that is changed by modifying the stressor layer or residual substrate. Individualized circuits or a circuit may also be defined above the fracture by dividing the circuit into preselected regions with surrounding trenches before fracture. We harvest the circuit(s) by pulling the foil handle away from the assembly.

Abstract: The present invention relates generally to thermally-conductive pastes for use with integrated circuits, and particularly, but not by way of limitation, to self-orienting microplates of graphite.

Abstract: A method for manufacturing a thin film direct bandgap semiconductor active solar cell device comprises providing a source substrate having a surface and disposing on the surface a stress layer having a stress layer surface area in contact with and bonded to the surface of the source substrate. Operatively associating a handle foil with the stress layer and applying force to the handle foil separates the stress layer from the source substrate, and leaves a portion of the source substrate on the stress layer surface substantially corresponding to the area in contact with the surface of the source substrate. The portion is less thick than the source layer. The stress layer thickness is below that which results in spontaneous spalling of the source substrate. The source substrate may comprise an inorganic single crystal or polycrystalline material such as Si, Ge, GaAs, SiC, sapphire, or GaN. In one embodiment the stress layer comprises a flexible material.

Abstract: A portion of compliant material includes four walls defining a slot. The slot has a relatively large cross-section end in fluid communication with a solder reservoir, and also has a relatively small cross-section end opposed to the relatively large cross-section end. The slot has a generally elongate rectangular shape when viewed in plan, with a length perpendicular to a scan direction, a width, parallel to the scan direction, associated with the relatively large cross section end, and a width, parallel to the scan direction, associated with the relatively small cross section end. The slot is configured in the portion of compliant material such that the relatively small cross-section end of the slot normally remains substantially closed, but locally opens sufficiently to dispense solder from the reservoir when under fluid pressure and locally unsupported by a workpiece. Methods of operation and fabrication are also disclosed.

Abstract: A portion of compliant material includes four walls defining a slot. The slot has a relatively large cross-section end in fluid communication with a solder reservoir, and also has a relatively small cross-section end opposed to the relatively large cross-section end. The slot has a generally elongate rectangular shape when viewed in plan, with a length perpendicular to a scan direction, a width, parallel to the scan direction, associated with the relatively large cross section end, and a width, parallel to the scan direction, associated with the relatively small cross section end. The slot is configured in the portion of compliant material such that the relatively small cross-section end of the slot normally remains substantially closed, but locally opens sufficiently to dispense solder from the reservoir when under fluid pressure and locally unsupported by a workpiece. Methods of operation and fabrication are also disclosed.

Abstract: The present invention is a patterned metal thermal interface. In one embodiment a system for dissipating heat from a heat-generating device includes a heat sink having a first surface adapted for thermal coupling to a first surface of the heat generating device and a thermal interface having at least one patterned surface, the thermal interface being adapted to thermally couple the first surface of the heat sink to the first surface of the heat generating device. The patterned surface of the thermal interface allows the thermal interface to deform under compression between the heat sink and the heat generating device, leading to better conformity of the thermal interface to the surfaces of the heat sink and the heat generating device.

Abstract: A portion of compliant material includes four walls defining a slot. The slot has a relatively large cross-section end in fluid communication with a solder reservoir, and also has a relatively small cross-section end opposed to the relatively large cross-section end. The slot has a generally elongate rectangular shape when viewed in plan, with a length perpendicular to a scan direction, a width, parallel to the scan direction, associated with the relatively large cross section end, and a width, parallel to the scan direction, associated with the relatively small cross section end. The slot is configured in the portion of compliant material such that the relatively small cross-section end of the slot normally remains substantially closed, but locally opens sufficiently to dispense solder from the reservoir when under fluid pressure and locally unsupported by a workpiece. Methods of operation and fabrication are also disclosed.

Abstract: An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

Abstract: The present invention is hybrid liquid metal-solder thermal interface. In one embodiment, a thermal interface for coupling a heat generating device to a heat sink includes a first metal interface layer, a second metal interface layer, and an isolation layer positioned between the first metal interface layer and the second metal interface layer, where at least one of the first metal interface layer and the second metal interface layer comprises a liquid metal.

Abstract: A portion of compliant material includes four walls defining a slot. The slot has a relatively large cross-section end in fluid communication with a solder reservoir, and also has a relatively small cross-section end opposed to the relatively large cross-section end. The slot has a generally elongate rectangular shape when viewed in plan, with a length perpendicular to a scan direction, a width, parallel to the scan direction, associated with the relatively large cross section end, and a width, parallel to the scan direction, associated with the relatively small cross section end. The slot is configured in the portion of compliant material such that the relatively small cross-section end of the slot normally remains substantially closed, but locally opens sufficiently to dispense solder from the reservoir when under fluid pressure and locally unsupported by a workpiece. Methods of operation and fabrication are also disclosed.

Abstract: An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components. With a two-layer ball-limiting composition comprising an adhesion/reaction barrier layer, wherein the adhesion/reaction barrier layer serves both as an adhesion layer and a reaction barrier layer, the adhesion/reaction barrier layer can be comprised of a material selected from the group consisting of Zr and ZrN.