Patents by Inventor Paul Bun Cheuk Woo

Paul Bun Cheuk Woo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140370673
    Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
    Type: Application
    Filed: September 2, 2014
    Publication date: December 18, 2014
    Inventors: Marina Zelner, Paul Bun Cheuk Woo, Mircea Capanu, Susan C. Nagy
  • Patent number: 8822235
    Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: September 2, 2014
    Assignee: BlackBerry Limited
    Inventors: Marina Zelner, Mircea Capanu, Paul Bun Cheuk Woo, Susan C. Nagy
  • Patent number: 8664704
    Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
    Type: Grant
    Filed: May 7, 2013
    Date of Patent: March 4, 2014
    Assignee: BlackBerry Limited
    Inventors: Marina Zelner, Paul Bun Cheuk Woo, Mircea Capanu, Susan C. Nagy, Andrew Vladimir Claude Cervin
  • Publication number: 20130241036
    Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
    Type: Application
    Filed: May 7, 2013
    Publication date: September 19, 2013
    Applicant: Research In Motion RF, Inc.
    Inventors: Marina Zelner, Paul Bun Cheuk Woo, Mircea Capanu, Susan C. Nagy, Andrew Vladimir Claude Cervin
  • Patent number: 8461637
    Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
    Type: Grant
    Filed: March 25, 2010
    Date of Patent: June 11, 2013
    Assignee: Research In Motion RF, Inc.
    Inventors: Marina Zelner, Paul Bun Cheuk Woo, Cervin-Lawry Andrew, Susan C. Nagy, Miroea Capanu
  • Patent number: 8361811
    Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
    Type: Grant
    Filed: December 1, 2008
    Date of Patent: January 29, 2013
    Assignee: Research In Motion RF, Inc.
    Inventors: Marina Zelner, Mircea Capanu, Paul Bun Cheuk Woo, Susan C. Nagy
  • Publication number: 20100176487
    Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
    Type: Application
    Filed: March 25, 2010
    Publication date: July 15, 2010
    Applicant: PARATEK MICROWAVE, INC.
    Inventors: Marina Zelner, Miroea Capanu, Paul Bun Cheuk Woo, Susan C. Nagy, Andrew Cervin-Lawry
  • Publication number: 20090121316
    Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.
    Type: Application
    Filed: December 1, 2008
    Publication date: May 14, 2009
    Inventors: Marina Zelner, Mircea Capanu, Paul Bun Cheuk Woo, Susan C. Nagy
  • Publication number: 20080001292
    Abstract: A thin-film capacitor structure fabricated on a substrate is provided. The thin-film capacitor includes a pyrochlore or perovskite alkali earth dielectric layer between a plurality of electrode layers. A pyrochlore or perovskite hydrogen-gettering barrier layer is deposited over the thin-film capacitor. A hermetic seal layer is deposited over the barrier layer by plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), or some other hydrogen-producing method. The hydrogen-gettering barrier layer prevents hydrogen from reacting with and degrading the properties of the dielectric material, thereby enhancing the durability and other features of the capacitor.
    Type: Application
    Filed: June 25, 2007
    Publication date: January 3, 2008
    Inventors: Marina Zelner, Paul Bun Cheuk Woo, Andrew Cervin-Lawry, Susan C. Nagy, Miroea Capanu