Abstract: A stabilized quantum dot composite includes a plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising an ionic metal oxide. A method of making a stabilized quantum dot composite includes forming a mixture comprising a plurality of luminescent semiconducting nanoparticles dispersed in an aqueous solution comprising an ionic metal oxide. The mixture is dried to form a stabilized quantum dot composite comprising the plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising the ionic metal oxide.

Abstract: A stabilized quantum dot composite includes a plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising an ionic metal oxide. A method of making a stabilized quantum dot composite includes forming a mixture comprising a plurality of luminescent semiconducting nanoparticles dispersed in an aqueous solution comprising an ionic metal oxide. The mixture is dried to form a stabilized quantum dot composite comprising the plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising the ionic metal oxide.

Abstract: A stabilized quantum dot composite includes a plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising an ionic metal oxide. A method of making a stabilized quantum dot composite includes forming a mixture comprising a plurality of luminescent semiconducting nanoparticles dispersed in an aqueous solution comprising an ionic metal oxide. The mixture is dried to form a stabilized quantum dot composite comprising the plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising the ionic metal oxide.

Abstract: A stabilized quantum dot composite includes a plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising an ionic metal oxide. A method of making a stabilized quantum dot composite includes forming a mixture comprising a plurality of luminescent semiconducting nanoparticles dispersed in an aqueous solution comprising an ionic metal oxide. The mixture is dried to form a stabilized quantum dot composite comprising the plurality of luminescent semiconducting nanoparticles embedded in a matrix comprising the ionic metal oxide.

Abstract: A lighting fixture has a communication interface; a light source configured to provide light output for general illumination; an image sensor configured to capture image information associated of with a field of view; and control circuitry, which is configured to provide a drive signal to the light source to control the light output. In one embodiment, the control circuitry is further configured to, for each object in the field of view, determine if an object in the field of view is an occupant based on the image information; if the object is an occupant, track movement of the occupant within the field of view; and determine a number of occupants in the field of view. The control circuitry may also be configured to provide occupancy information bearing on the number of occupants in the field of view to a remote entity via the communication interface.

Abstract: A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.

Abstract: A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.

Abstract: Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface.

Abstract: Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.

Abstract: Highly planar non-polar a-plane GaN films are grown by hydride vapor phase epitaxy (HVPE).