Abstract: A non-conductive magnetic shield material is provided for use in magnetic shields of semiconductor packaging. The material is made magnetic by the incorporation of ferromagnetic particles into a polymer matrix, and is made non-conductive by the provision of an insulating coating on the ferromagnetic particles.

Abstract: A non-conductive magnetic shield material is provided for use in magnetic shields of semiconductor packaging. The material is made magnetic by the incorporation of ferromagnetic particles into a polymer matrix, and is made non-conductive by the provision of an insulating coating on the ferromagnetic particles.

Abstract: The current disclosure describes carrier tape systems, which include a cover tape having adhesion areas and non-adhesion areas which are substantially free of adhesive. Methods for supplying semiconductor devices to an apparatus, which in operation, places the semiconductor devices at desired locations are also described. Methods of forming a semiconductor device carrier system are also described.

Abstract: A semiconductor structure includes a first substrate including a first surface and a second surface opposite to the first surface; a first conductive via extended through the first substrate; a second conductive via extended through the first substrate; and a third conductive via extended through the first substrate, wherein the second conductive via is disposed between the first conductive via and the third conductive via, the second conductive via is configured to connect to a signal source, and the first conductive via and the third conductive via are configured to connect to an electrical ground.

Abstract: The current disclosure describes carrier tape systems, which include a cover tape having adhesion areas and non-adhesion areas which are substantially free of adhesive. Methods for supplying semiconductor devices to an apparatus, which in operation, places the semiconductor devices at desired locations are also described. Methods of forming a semiconductor device carrier system are also described.

Abstract: A semiconductor structure includes a first device and a second device bonded on the first device. The first device has a first sidewall distal to the second device and a second sidewall proximal to the second device. A surface roughness of the second sidewall is larger than a surface roughness of the first sidewall.

Abstract: An integrated fan-out structure on a semiconductor die, method of making the same and method of testing the semiconductor die are disclosed. The semiconductor die includes a bond pad and a hole formed in the bond pad, a passivation layer formed over a portion of the bond pad, and a protective layer formed over the hole in the bond pad.

Abstract: The current disclosure describes carrier tape systems that include a carrier tape substrate and a cover tape. The carrier tape system includes a plurality of repetitive adhesion areas where the carrier tape substrate and cover tape are attached to each other and non-adhesion areas where the carrier tape substrate and cover tape are not attached to each other. Separating the cover tape and the carrier tape substrate at these repetitive adhesion and non-adhesion areas imparts a vibration to the cover tape which impedes or prevents semiconductor devices carried in pockets of the carrier tape substrate from adhering to adhesive on the cover tape.

Abstract: The current disclosure describes carrier tape systems that include a carrier tape substrate and a cover tape. The carrier tape system includes a plurality of repetitive adhesion areas where the carrier tape substrate and cover tape are attached to each other and non-adhesion areas where the carrier tape substrate and cover tape are not attached to each other. Separating the cover tape and the carrier tape substrate at these repetitive adhesion and non-adhesion areas imparts a vibration to the cover tape which impedes or prevents semiconductor devices carried in pockets of the carrier tape substrate from adhering to adhesive on the cover tape.

Abstract: A semiconductor structure includes a substrate comprising a die pad disposed over the substrate, and a passivation disposed over the substrate and surrounding the die pad, a redistribution layer (RDL) comprising a dielectric layer disposed over the passivation and an interconnect structure disposed within the dielectric layer and electrically connecting with the die pad, a conductive bump disposed over and electrically connected with the interconnect structure; and an isolation layer surrounding the substrate and the RDL.

Abstract: A semiconductor device includes a substrate and at least one bump structure disposed over the substrate. The at least one bump structure includes a pillar formed of a metal having a lower solderability than copper or a copper alloy to a solder alloy disposed over the substrate. A solder alloy is formed directly over and in contact with an upper surface of the metal having the lower solderability than copper or a copper alloy. The pillar has a height of greater than 10 ?m.

Abstract: Generally, the present disclosure provides example embodiments relating to a package attached to a printed circuit board (PCB). In an embodiment, a structure includes a PCB. The PCB has ball pads arranged in a matrix. Outer ball pads are along one or more outer edges of the matrix, and each of the outer ball pads has a first solder-attach area. Inner ball pads are interior to the matrix, and each of the inner ball pads has a second solder-attach area. The first solder-attach area is larger than the second solder-attach area.

Abstract: A method includes providing first and second wafers; forming a first device layer in a top portion of the first wafer; forming a second device layer in a top portion of the second wafer; forming a first groove in the first device layer; forming a second groove in the second device layer; bonding the first and second wafers together after at least one of the first and second grooves is formed; and dicing the bonded first and second wafers by a cutting process, wherein the cutting process cuts through the first and second grooves.

Abstract: A semiconductor structure includes a substrate comprising a die pad disposed over the substrate, and a passivation disposed over the substrate and surrounding the die pad, a redistribution layer (RDL) comprising a dielectric layer disposed over the passivation and an interconnect structure disposed within the dielectric layer and electrically connecting with the die pad, a conductive bump disposed over and electrically connected with the interconnect structure; and an isolation layer surrounding the substrate and the RDL.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a semiconductor chip; a substrate facing an active surface of the semiconductor chip; and a conductive bump extending from the active surface of the semiconductor chip toward the substrate, wherein the conductive bump comprises: a plurality of bump segments comprising a first group of bump segments and a second group of bump segments, wherein each bump segment comprises the same segment height in a direction orthogonal to the active surface of the semiconductor chip, and each bump segment comprises a volume defined by the multiplication of the segment height with the average cross-sectional area of the bump segment; wherein the ratio of the total volume of the first group of bump segments to the total volume of the second group of bump segments is between about 0.03 and about 0.8.

Abstract: The current disclosure describes carrier tape systems, which include a carrier tape including a plurality of pockets. Each pocket contains a semiconductor device adhered to a bottom surface of the pocket by an adhesive. In some embodiments, the adhesive is a reversible adhesive. Use of the adhesive reduces the likelihood the semiconductor device will be damaged due to movement of the semiconductor device in the pocket during shipment of the carrier tape. Methods of forming a semiconductor device carrier systems and methods of supplying semiconductor devices are also described.

Abstract: Generally, the present disclosure provides example embodiments relating to a package that may be attached to a printed circuit board (PCB). In an embodiment, a structure includes a package. The package includes one or more dies and metal pads on an exterior surface of the package. At least some of the metal pads are first solder ball pads. The structure further includes pins, and each of the pins is attached to a respective one of the metal pads.

Abstract: A non-conductive magnetic shield material is provided for use in magnetic shields of semiconductor packaging. The material is made magnetic by the incorporation of ferromagnetic particles into a polymer matrix, and is made non-conductive by the provision of an insulating coating on the ferromagnetic particles.

Abstract: Generally, the present disclosure provides example embodiments relating to a printed circuit board (PCB). In an embodiment, a structure includes a PCB including insulating layers with respective metal layers being disposed therebetween. Each of first layers of the insulating layers includes a first fiberglass content. A second layer of the insulating layers has a second fiberglass content less than the first fiberglass content. For example, in some embodiments, the second insulating layer does not include a fiberglass matrix.

Abstract: A non-conductive magnetic shield material is provided for use in magnetic shields of semiconductor packaging. The material is made magnetic by the incorporation of ferromagnetic particles into a polymer matrix, and is made non-conductive by the provision of an insulating coating on the ferromagnetic particles.