Patents by Inventor Pei-Shan CHANG

Pei-Shan CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240360548
    Abstract: In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.
    Type: Application
    Filed: July 11, 2024
    Publication date: October 31, 2024
    Inventors: Chi-Cheng HUNG, Pei-Wen WU, Yu-Sheng WANG, Pei-Shan CHANG
  • Publication number: 20240355740
    Abstract: A method includes forming a dielectric layer over a conductive feature, and etching the dielectric layer to form an opening. The conductive feature is exposed through the opening. The method further includes forming a tungsten liner in the opening, wherein the tungsten liner contacts sidewalls of the dielectric layer, depositing a tungsten layer to fill the opening, and planarizing the tungsten layer. Portions of the tungsten layer and the tungsten liner in the opening form a contact plug.
    Type: Application
    Filed: June 30, 2023
    Publication date: October 24, 2024
    Inventors: Feng-Yu Chang, Sheng-Hsuan Lin, Shu-Lan Chang, Kai-Yi Chu, Meng-Hsien Lin, Pei-Hsuan Lee, Pei Shan Chang, Chih-Chien Chi, Chun-I Tsai, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai, Syun-Ming Jang, Wei-Jen Lo
  • Publication number: 20240332374
    Abstract: A method and structure for forming semiconductor device includes forming a first opening in a dielectric layer to expose a source/drain region. In some embodiments, the method further includes depositing a first metal layer in the opening and over the source/drain region. Thereafter, in some examples, the method further includes performing an annealing process to modulate a grain size of the first metal layer. In various embodiments, the method further includes depositing a second metal layer over the annealed first metal layer. In some embodiments, the second metal layer has a substantially uniform phase.
    Type: Application
    Filed: October 23, 2023
    Publication date: October 3, 2024
    Inventors: Chi-Cheng HUNG, Pei-Wen WU, Pei Shan CHANG
  • Patent number: 12065731
    Abstract: In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.
    Type: Grant
    Filed: January 21, 2021
    Date of Patent: August 20, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Cheng Hung, Pei-Wen Wu, Yu-Sheng Wang, Pei-Shan Chang
  • Publication number: 20230395426
    Abstract: Provided is a conductive structure and a method for forming such a structure. The method includes forming a treatable layer by depositing a layer comprising a metal over a structure; performing a directional treatment process on a targeted portion of the treatable layer to convert the targeted portion to a material different from a non-targeted portion of the treatable layer, wherein the directional treatment process is selected from the group consisting of nitridation, oxidation, chlorination, carbonization; and selectively removing the non-targeted portion from the structure, wherein the targeted portion remains over the structure.
    Type: Application
    Filed: June 1, 2022
    Publication date: December 7, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Hsiang Chao, Shu-Lan Chang, Ching-Yi Chen, Shih-Wei Yeh, Pei Shan Chang, Ya-Yi Cheng, Yu-Chen Ko, Yu-Shiuan Wang, Chun-Hsien Huang, Hung-Chang Hsu, Chih-Wei Chang, Ming-Hsing Tsai, Wei-Jung Lin
  • Publication number: 20230364020
    Abstract: The present invention provides formulations comprising polypeptides and hydroxypropyl methylcellulose acetate succinate (HPMCAS) derivatives. The formulations are stable; for example, during high temperature processing and in possible low pH environments. In addition, the HPMCAS derivatives provide protection to a pH sensitive protein against acidic degradation products from aqueous hydrolysis of poly(lactic-co-glycolic acid) (PLGA) in PLGA-based delivery systems.
    Type: Application
    Filed: March 31, 2023
    Publication date: November 16, 2023
    Inventors: Purnendu Kumar NAYAK, Debby Pei-Shan CHANG, Karthikan RAJAGOPAL, Jonathan ZARZAR
  • Publication number: 20230260836
    Abstract: A method includes forming a dielectric layer over a source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the source/drain region. A conductive liner is formed on sidewalls and a bottom of the opening. A surface modification process is performed on an exposed surface of the conductive liner. The surface modification process forms a surface coating layer over the conductive liner. The surface coating layer is removed to expose the conductive liner. The conductive liner is removed from the sidewalls of the opening. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with a remaining portion of the conductive liner and the dielectric layer.
    Type: Application
    Filed: May 13, 2022
    Publication date: August 17, 2023
    Inventors: Pei Shan Chang, Yi-Hsiang Chao, Chun-Hsien Huang, Peng-Hao Hsu, Kevin Lee, Shu-Lan Chang, Ya-Yi Cheng, Ching-Yi Chen, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
  • Publication number: 20220228257
    Abstract: In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.
    Type: Application
    Filed: January 21, 2021
    Publication date: July 21, 2022
    Inventors: Chi-Cheng HUNG, Pei-Wen WU, Yu-Sheng WANG, Pei-Shan CHANG