Patents by Inventor Pekka Kuosmanen

Pekka Kuosmanen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070117383
    Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, and from which pulses are released toward the reaction space. A pulse control device is preferably interposed between the staging volume and the reaction space. A sensor may sense a physical condition in the staging volume for providing feedback to a controller of the precursor delivery system, for performance monitoring and control.
    Type: Application
    Filed: November 28, 2006
    Publication date: May 24, 2007
    Applicant: Planar Systems, Inc.
    Inventors: Bradley Aitchison, Jarmo Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Harkonen, Martti Sonninen, Tommy Turkulainen
  • Publication number: 20070089674
    Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. At least a portion of the flow path may be formed in one or more blocks of thermally conductive material forming an elongate thermally conductive body extending from the precursor container toward the reaction space. In some embodiments, a heater is thermally associated with the thermally conductive body to inhibit condensation of precursor vapor in the flow path. A high conductivity particle filter having inertial traps is preferably included for filtering particles from the precursor material. The particle filter preferably include a filter passage including turns and inertial traps adjacent the turns. In some embodiments, the filter passage and the inertial traps may be formed in the thermally conductive body between the precursor container and the reaction space.
    Type: Application
    Filed: November 28, 2006
    Publication date: April 26, 2007
    Applicant: Planar Systems, Inc.
    Inventors: Bradley Aitchison, Jarmo Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Harkonen, Martti Sonninen, Tommy Turkulainen
  • Patent number: 7191793
    Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a flexible diaphragm operable to flex between an open position whereby a valve passage is at least partially open and a closed position whereby a substantial portion of a first side of the diaphragm is pressed against a valve seat to thereby block the valve passage and facilitate heat transfer between the valve seat and the diaphragm. In some embodiments, a heating body thermally contacts the valve body and extends proximal to a second side of the diaphragm opposite the first side thereof to form a thermally conductive pathway that facilitates maintaining an operating temperature at the diaphragm. A thermally resistive member may be interposed between the valve passage and an actuator, such as a solenoid, for attenuating heat transfer between the valve passage and the actuator.
    Type: Grant
    Filed: April 3, 2006
    Date of Patent: March 20, 2007
    Assignee: Planar Systems, Inc.
    Inventors: Jarmo Ilmari Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Härkönen, Bradley J. Aitchison
  • Patent number: 7141095
    Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, from which a series of pulses is released toward the reaction space. The precursor material is typically vaporized after loading it in the precursor container by heating or reducing the pressure inside the precursor container. A vacuum line is preferably coupled to the precursor container and bypasses the reaction space for reducing pressure inside the precursor container without drawing particles into the reaction space. A high conductivity particle filter having inertial traps may be included, preferably between the precursor container and a staging volume, for filtering particles from the precursor material.
    Type: Grant
    Filed: September 10, 2003
    Date of Patent: November 28, 2006
    Assignee: Planar Systems, Inc.
    Inventors: Bradley J. Aitchison, Jarmo Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Härkönen, Martti Sonninen
  • Publication number: 20060174945
    Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a flexible diaphragm operable to flex between an open position whereby a valve passage is at least partially open and a closed position whereby a substantial portion of a first side of the diaphragm is pressed against a valve seat to thereby block the valve passage and facilitate heat transfer between the valve seat and the diaphragm. In some embodiments, a heating body thermally contacts the valve body and extends proximal to a second side of the diaphragm opposite the first side thereof to form a thermally conductive pathway that facilitates maintaining an operating temperature at the diaphragm. A thermally resistive member may be interposed between the valve passage and an actuator, such as a solenoid, for attenuating heat transfer between the valve passage and the actuator.
    Type: Application
    Filed: April 3, 2006
    Publication date: August 10, 2006
    Applicant: Planar Systems, Inc.
    Inventors: Jarmo Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Harkonen, Bradley Aitchison
  • Patent number: 7021330
    Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a valve seat having an annular seating surface that surrounds an inlet of the valve and extends radially therefrom. The seating surface contacts a substantial portion of the first side of a flexible diaphragm when the diaphragm is closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm, thereby inhibiting condensation of a medium flowing through the valve passage. The seating surface is preferably flat and smooth, to prevent shearing of an elastomeric diaphragm. For a plastic diaphragm, a ring-shaped seating ridge may extend from the seating surface to cause localized permanent deformation of the diaphragm and enhanced sealing, while still allowing a substantial portion of the diaphragm to contact the seating surface for enhanced heat transfer. Valve speed enhancements and other reliability enhancing features are also described.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: April 4, 2006
    Assignee: Planar Systems, Inc.
    Inventors: Jarmo Ilmari Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Härkönen, Bradley J. Aitchison
  • Patent number: 6941963
    Abstract: A diaphragm valve includes a pressure vent communicating with an enclosed space behind the diaphragm for reducing resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction is coupled to the pressure vent to reduce fluid pressure in the enclosed space. When used in an atomic layer deposition (ALD) system, the venting and suction improves the thin film deposition process and prevents leakage through the valve of potentially toxic ALD precursor vapors. Features for thermal management and reliability enhancement are also described.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: September 13, 2005
    Assignee: Planar Systems, Inc.
    Inventors: Jarmo Ilmari Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Härkönen, Bradley J. Aitchison
  • Patent number: 6907897
    Abstract: A diaphragm valve includes a heating body that thermally contacts a valve body of the valve and extends proximal to a diaphragm of the valve opposite a valve passage through which medium flows. The heating body forms a thermally conductive pathway between the valve body and the diaphragm that facilitates maintaining an operating temperature at the diaphragm. When used in an atomic layer deposition (ALD) system, the diaphragm valve inhibits condensation or freezing of high-temperature ALD precursor gases in the valve passage. A plunger including thermally insulating features preferably extends through a central opening in the heating body to operably couple a valve actuator to the diaphragm. In some embodiments, a thermally resistive member may be interposed between the valve passage and the actuator for attenuating heat transfer between the valve passage and the actuator.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: June 21, 2005
    Assignee: Planar Systems, Inc.
    Inventors: Jarmo Ilmari Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Härkönen, Bradley J. Aitchison
  • Publication number: 20050011555
    Abstract: A diaphragm valve includes a pressure vent communicating with an enclosed space behind the diaphragm for reducing resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction is coupled to the pressure vent to reduce fluid pressure in the enclosed space. When used in an atomic layer deposition (ALD) system, the venting and suction improves the thin film deposition process and prevents leakage through the valve of potentially toxic ALD precursor vapors. Features for thermal management and reliability enhancement are also described.
    Type: Application
    Filed: June 26, 2003
    Publication date: January 20, 2005
    Inventors: Jarmo Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Harkonen, Bradley Aitchison
  • Publication number: 20040262562
    Abstract: A shut-off type diaphragm valve adapted for use in an atomic layer deposition system includes a valve seat having an annular seating surface that surrounds an inlet of the valve and extends radially therefrom. The seating surface contacts a substantial portion of the first side of a flexible diaphragm when the diaphragm is closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm, thereby inhibiting condensation of a medium flowing through the valve passage. The seating surface is preferably flat and smooth, to prevent shearing of an elastomeric diaphragm. For a plastic diaphragm, a ring-shaped seating ridge may extend from the seating surface to cause localized permanent deformation of the diaphragm and enhanced sealing, while still allowing a substantial portion of the diaphragm to contact the seating surface for enhanced heat transfer. Valve speed enhancements and other reliability enhancing features are also described.
    Type: Application
    Filed: June 26, 2003
    Publication date: December 30, 2004
    Inventors: Jarmo Ilmari Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Harkonen, Bradley J. Aitchison
  • Publication number: 20040261850
    Abstract: A diaphragm valve includes a heating body that thermally contacts a valve body of the valve and extends proximal to a diaphragm of the valve opposite a valve passage through which medium flows. The heating body forms a thermally conductive pathway between the valve body and the diaphragm that facilitates maintaining an operating temperature at the diaphragm. When used in an atomic layer deposition (ALD) system, the diaphragm valve inhibits condensation or freezing of high-temperature ALD precursor gases in the valve passage. A plunger including thermally insulating features preferably extends through a central opening in the heating body to operably couple a valve actuator to the diaphragm. In some embodiments, a thermally resistive member may be interposed between the valve passage and the actuator for attenuating heat transfer between the valve passage and the actuator.
    Type: Application
    Filed: June 26, 2003
    Publication date: December 30, 2004
    Inventors: Jarmo Ilmari Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Harkonen, Bradley J. Aitchison
  • Publication number: 20040124131
    Abstract: A precursor delivery system includes a flow path from a precursor container to a reaction space of a thin film deposition system, such as an atomic layer deposition (ALD) reactor. A staging volume is preferably established between the precursor container and the reaction space for receiving at least one dose of the precursor material from the precursor container, from which a series of pulses is released toward the reaction space. The precursor material is typically vaporized after loading it in the precursor container by heating or reducing the pressure inside the precursor container. A vacuum line is preferably coupled to the precursor container and bypasses the reaction space for reducing pressure inside the precursor container without drawing particles into the reaction space. A high conductivity particle filter having inertial traps may be included, preferably between the precursor container and a staging volume, for filtering particles from the precursor material.
    Type: Application
    Filed: September 10, 2003
    Publication date: July 1, 2004
    Inventors: Bradley J. Aitchison, Jarmo Maula, Hannu Leskinen, Teemu Lang, Pekka Kuosmanen, Kari Harkonen, Martti Sonninen
  • Publication number: 20040087081
    Abstract: A dielectric structure formed on a substrate using a thin film deposition technique such as atomic layer deposition (ALD) includes at least one layer of current leakage inhibiting dielectric material, such as Al2O3, HfO2, or ZrO2, for example, in combination with niobium oxide (Nb2O5). The Nb2O5 is either incorporated into the dielectric structure as a dopant in a layer of the current leakage inhibiting material or as one or more separate layers in addition to the layer or layers of current leakage inhibiting material. The dielectric structure may be used in miniature capacitors for integrated circuit devices such as DRAM devices, for example. In some embodiments, one or more capacitor electrodes are formed around the dielectric structure in the same ALD processing system. One or more of the electrodes may comprise a transition metal nitride, a noble metal, or a noble metal alloy.
    Type: Application
    Filed: June 30, 2003
    Publication date: May 6, 2004
    Inventors: Bradley J. Aitchison, Arto Pakkala, Pekka Kuosmanen, Kari Harkonen