Abstract: A strain-isolated mirror is made from a substrate having first and second body portions. First and second connecting portions extend across a gap between the first body portion and the second body portion. A first flexural hinge on the first second connecting portion couples the second connecting portion to the first body portion.

Abstract: A strain-isolated mirror is made from a substrate having first and second body portions. First and second connecting portions extend across a gap between the first body portion and the second body portion. A first flexural hinge on the first second connecting portion couples the second connecting portion to the first body portion.

Abstract: A process for improving the uniformity of the thickness of a semiconductor substrate utilizing plasma assisted chemical etching is disclosed. The process includes measuring the thickness of a semiconductor substrate at discrete points on the front surface, computing a dwell time versus position map based on the measured thickness data, mathematically inverting the position map to allow material to be removed from the back surface, and selectively removing material from the back surface of the substrate by plasma assisted chemical etching to improve the thickness uniformity of the substrate.

Abstract: An apparatus (2) that performs high resolution thickness metrology on a thin film layer of a wafer (24), includes a filtered white light source that forms a collimated monochromatic light beam (19). The filtered white light source includes a halogen lamp (10), a condensing lens (12), a circular aperture (14), a collimator lens (16), and a narrow band filter wheel (18). The collimated monochromatic light beam (19) is passed through a beamsplitter (60), a second collimator lens (20), a third collimator lens (22), and a lenslet array (38), such that a corresponding array of sample points (39) on the surface of the wafer (24) are irradiated with focused monochromatic light. A reflectance pattern is formed at each sample point (39) due to coherent interactions in the monochromatic light as it is reflected within the wafer structure (24). An image of each reflectance pattern is reflected off the surface of the wafer (24) and is directed onto a detector array (31) of a charge coupled device (CCD) camera (30).

Abstract: A method for controlling the flow of semiconductor wafers within a semiconductor wafer processing facility. This method includes a wafer storage and preparation area (10) and a wafer metrology and etch area (12), both of which are monitored and/or controlled by a master controller (14). The wafer storage and preparation area (10) is typically kept at a class 10 clean room level and is comprised of a wafer storage area (16) and a wafer preparation area (18). The wafer metrology and etch area (12) is typically kept at a class 1000 clean room level and is comprised of an I/O cassette module (22), a wafer pre-aligner (24), a wafer router (26), a wafer metrology instrument (28), and a wafer etching instrument (30). The semiconductor wafers are transported, either manually or automatically, between the wafer storage area (16) and the wafer preparation area (18), as well as between the wafer storage and preparation area (10) and the wafer metrology and etch area (12), within wafer storage cassettes ( 20).

Abstract: A method of planarizing a microstructure (16) includes the steps of providing a layer (18) of material over the microstructure (16) such that an overcoating surface (20) is formed, measuring the thickness of the layer (18) across the surface (20) forming a dwell time versus position map and removing material from the layer (18) of material by use of a plasma assisted chemical etching tool in accordance with the dwell time versus position map.

Abstract: An apparatus for shielding a plurality of wafer registration surfaces 14, 30 and a wafer retention stage 26 from depreciative effects of a chemical etching process includes a pair of etching shields 32, 32' that are positioned along an outside edge of a wafer 10. The wafer 10 is registered to the wafer retention stage 26 by the registration surfaces 14, 30. The wafer retention stage 26, and hence the wafer 10, rotates about an axis 36 through the center of the wafer 10. A chemical etching instrument probe 18 is moved, with respect to the wafer 10, along a fixed wafer diameter 34 while the wafer 10 is rotating. The probe 18 is initially positioned above a first etching shield 32' and is moved, with respect to the wafer 10, across the wafer diameter 34 until it reaches a second etching shield 32. Thus, the probe 18 scans the entire surface of the wafer 10 without extending outside the wafer edge to depreciatively effect the wafer retention materials 14, 26, 30.

Abstract: An apparatus (10) that measures the thickness of a thin film layer of a wafer (12) is described. The thickness of the thin film layer is measured by irradiating a reference wafer (22) with a beam (21) of broadband radiation. The reference wafer (22) has a layer structure similar to that of the wafer (12) undergoing measurement, whereby the thin film layer of the reference wafer (22) that corresponds to the thin film layer to be measured is varied over a specific range of known thicknesses. Thus, the incident beam (21) of broadband radiation is reflected from the reference wafer (22) having a unique spectral signature that corresponds to one of these known thicknesses. A reflected beam (23, 25, 27) of unique spectral radiation is projected onto the wafer (12) undergoing measurement, where it is reflected to produce a beam (29) of unique spectral radiation having a characteristic that is indicative of the thickness of the thin film layer to be measured.

Abstract: A reactor 10 having a vacuum housing 30 which encloses a plurality of plasma chambers 14a, 14b is used to perform local plasma assisted chemical etching on an etchable substrate 12. The chambers 14a, 14b are movable and are sized according to the removal material footprint desired. Radio frequency driven electrodes 20a, 20b and gas diffuser/electrodes 22a, 22b have the same diameter as the chambers 14a, 14b. The substrate 12 is mounted on a substrate holder 44 which also acts as the other electrode. The holder 44 is mounted on an X-Y positioning table 46. A process gas is flowed into a preselected chamber with rf power so as to disassociated the process gas into a plasma. The plasma chambers 14a, 14b may be scanned over the substrate surface while the gap between the chambers and the substrate is varied to yield a desired etch profile.

Abstract: An apparatus 10 for micropatterning a photoresist coated surface 12 of a semiconductor wafer 14 includes a computer 50 for controlling an image on a screen 29 of a cathode ray tube (CRT) 30. The CRT screen 29 is optically connected to a liquid crystal light valve (LCLV) 26 by a fiber optic faceplate 28. This connection is such that the computer controlled image on the CRT screen 29 is reproduced on the face 27 of the LCLV 26 as a reflective pattern of this image. An argon-ion laser 16 provides a polarized monochromatic light beam 18 that is reflected from the face 27 of the LCLV 26. This reflected beam 32 is convergently focused by a lens system 36 onto a projected area 37 of the photoresist coated wafer surface 12, thereby exposing the photoresist with an image of the LCLV reflective pattern. A helium-neon laser 38 provides a polarized monochromatic light beam 44 that is convergently focused onto the same projected area 37 of the wafer surface 12.

Abstract: This invention is directed to an actuator which is particularly adapted among many other possible uses, or use in adjusting the configuration of deformable mirrors.

Abstract: An encoder for providing a conical array of temporally phased pulse beams. A pulse is inserted and continuously recirculated around an optical ring. The pulse is amplified during each circulation and a portion of the pulse is emitted at the end of each circulation. The encoder includes means for spatially separating each emitted pulse to provide a conical array of beams at a constant field angle relative to the optical axis of propagation.