Abstract: Flexible composite barrier structures are used to improve the resistance, to oxygen and moisture degradation, of an organic electronic device including at least one active layer comprising an organic material.

Abstract: This invention relates to novel, transparent oxide semiconductor thin film transistors (TFT's) and a process for making them.

Abstract: An ion-beam deposition process for fabricating attenuating phase shift photomask blanks, capable of producing a phase shift of 180°, and which can provide tunable optical transmission at selected lithographic wavelengths <400 nm, comprising at least one layer of material of general formulae MzSiOxNy or MzAlOxNy, is described.

Abstract: An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MOxCyNz compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in a single layer or a multiple layer configuration.

Abstract: A single ion-beam deposition, or a dual ion-beam deposition process for fabricating attenuating phase shift photomask blanks capable of producing a phase shift of 180° and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths <400 nm, comprising at least one layer of an optically transmitting and/or one layer of optically absorbing elemental or a compound material in a periodic or an aperiodic arrangement.

Abstract: An ion-beam deposition process for fabricating attenuating phase shift photomask blanks, capable of producing a phase shift of 180°, and which can provide tunable optical transmission at selected lithographic wavelengths<400 nm, comprising at least one layer of material of general formulae MzSiOxNy or MzAlOxNy, is described.

Abstract: An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MOxCyNz compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in asingle layer or a multiple layer configuration.

Abstract: Flexible composite barrier structures are used to improve the resistance, to oxygen and moisture degradation, of an organic electronic device including at least one active layer comprising an organic material.

Abstract: Flexible composite barrier structures are used to improve the resistance, to oxygen and moisture degradation, of an organic electronic device including at least one active layer comprising an organic material.

Abstract: An ion-beam film deposition process is described for fabricating binary photomask blanks for selected lithographic wavelengths <400 nm, the said film essentially consisting of the MOxCyNz compound where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof in a single layer or a multiple layer configuration.

Abstract: Flexible composite barrier structures are used to improve the resistance, to oxygen and moisture degradation, of an organic electronic device including at least one active layer comprising an organic material.

Abstract: A single ion-beam deposition, or a dual ion-beam deposition process for fabricating attenuating phase shift photomask blanks capable of producing a phase shift of 180° and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths <400 nm, comprising at least one layer of an optically transmitting and/or one layer of optically absorbing elemental or a compound material in a periodic or an aperiodic arrangement.

Abstract: An ion-beam deposition process for fabricating attenuating phase shift photomask blanks, capable of producing a phase shift of 180°, and which can provide tunable optical transmission at selected lithographic wavelengths<400 nm, comprising at least one layer of material of general formulae MzSiOxNy or MzAlOxNy, is described.

Abstract: Disclosed are attenuating embedded phase shift masks capable of producing a phase shift of 180° with an optical transitivity of at least 0.001 at a selected lithographic wavelength less than 200 nm. The masks are comprised of distinct contiguous alternating contiguous layers of an optically transparent material consisting essentially of an oxide selected from the group consisting of oxides of Al and Si and layers. of an optically absorbing material consisting essentially of a nitride selected from the group consisting of nitrides of Al and Si. Such masks are commonly known in the art as attenuating (embedded) phase shift masks or half-tone phase shift masks.

Abstract: Attenuating embedded phase shift photomask blanks capable of producing a phase shift of 180.degree. and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths <400 nm comprise at least one layer of an aluminum compound and at least one component that is more optically absorbing than the aluminum compound at selected lithographic wavelengths <400 nm and are made by depositing at least one layer of an aluminum compound and at least one component that is more optically absorbing than the aluminum compound onto a substrate.

Abstract: Attenuating embedded phase shift photomask blanks capable of producing a 180.degree. phase shift with an optical transmissivity of at least 0.0001 at wavelengths <400 nm comprise alternating layers, either periodic or aperiodic, of an optically transmissive material and an optically absorbing material and are made by depositing alternating layers of optically transmissive material and optically absorbing material on a substrate, preferably by vapor deopsition.

Abstract: Powder compositions for producing high resistivity resistors capable of withstanding high voltage surges without large changes in resistivity, said compositions comprising finely divided pyrochlore-related oxides, lead glasses and metal titanates. Alternately to comprising titanates, the compositions may comprise metal titanate precursors such as crystallizable glasses capable of forming metal titanates upon being heated or titanium oxide plus a glass which react to form metal titanates.