Patents by Inventor Peter J. Cowdery-Corvan
Peter J. Cowdery-Corvan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8207063Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.Type: GrantFiled: January 26, 2007Date of Patent: June 26, 2012Assignee: Eastman Kodak CompanyInventors: Peter J. Cowdery-Corvan, David H. Levy, Shelby F. Nelson, Diane C. Freeman, Thomas D. Pawlik
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Patent number: 8129098Abstract: The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.Type: GrantFiled: November 20, 2007Date of Patent: March 6, 2012Assignee: Eastman Kodak CompanyInventors: Lyn M. Irving, Diane C. Freeman, Peter J. Cowdery-Corvan, Cheng Yang, David H. Levy
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Patent number: 8102114Abstract: A method of making an inverted bottom-emitting OLED device, comprising: providing a substrate; providing one or more first electrodes driven by n-type transistors on the substrate; providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 105 ohm-cm and a bandgap greater than 2.5 eV; providing an organic light-emitting layer over the electron-transporting layer; providing a hole-transporting layer over the organic emitting layer; and providing a second electrode over the hole-transporting layer.Type: GrantFiled: February 27, 2009Date of Patent: January 24, 2012Assignee: Global OLED Technology, LLC.Inventors: Lee W. Tutt, Therese M. Feller, Peter J. Cowdery-Corvan
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Patent number: 8030212Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.Type: GrantFiled: September 26, 2007Date of Patent: October 4, 2011Assignee: Eastman Kodak CompanyInventors: Cheng Yang, Lyn M. Irving, David H. Levy, Peter J. Cowdery-Corvan, Diane C. Freeman
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Patent number: 8017183Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after or simultaneously with or introducing applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.Type: GrantFiled: September 26, 2007Date of Patent: September 13, 2011Assignee: Eastman Kodak CompanyInventors: Cheng Yang, Lyn M. Irving, David H. Levy, Peter J. Cowdery-Corvan, Diane C. Freeman
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Patent number: 7972898Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.Type: GrantFiled: September 26, 2007Date of Patent: July 5, 2011Assignee: Eastman Kodak CompanyInventors: Peter J. Cowdery-Corvan, David H. Levy, Thomas D. Pawlik, Diane C. Freeman, Shelby F. Nelson
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Publication number: 20110024770Abstract: A method of making an inverted bottom-emitting OLED device, comprising: providing a substrate; providing one or more first electrodes driven by n-type transistors on the substrate; providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 105 ohm-cm and a bandgap greater than 2.5 eV; providing an organic light-emitting layer over the electron-transporting layer; providing a hole-transporting layer over the organic emitting layer; and providing a second electrode over the hole-transporting layer.Type: ApplicationFiled: October 12, 2010Publication date: February 3, 2011Inventors: Lee W. Tutt, Therese M. Feller, Peter J. Cowdery-Corvan
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Patent number: 7858144Abstract: A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film.Type: GrantFiled: September 26, 2007Date of Patent: December 28, 2010Assignee: Eastman Kodak CompanyInventors: Diane C. Freeman, David H. Levy, Peter J. Cowdery-Corvan
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Patent number: 7851380Abstract: The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.Type: GrantFiled: September 26, 2007Date of Patent: December 14, 2010Assignee: Eastman Kodak CompanyInventors: Shelby F. Nelson, David H. Levy, Lyn M. Irving, Peter J. Cowdery-Corvan, Diane C. Freeman, Carolyn R. Ellinger
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Patent number: 7846644Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.Type: GrantFiled: November 20, 2007Date of Patent: December 7, 2010Assignee: Eastman Kodak CompanyInventors: Lyn M. Irving, David H. Levy, Diane C. Freeman, Cheng Yang, Peter J. Cowdery-Corvan
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Publication number: 20100219747Abstract: A method of making an inverted bottom-emitting OLED device, comprising: providing a substrate; providing one or more first electrodes driven by n-type transistors on the substrate; providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 105 ohm-cm and a bandgap greater than 2.5 eV; providing an organic light-emitting layer over the electron-transporting layer; providing a hole-transporting layer over the organic emitting layer; and providing a second electrode over the hole-transporting layer.Type: ApplicationFiled: February 27, 2009Publication date: September 2, 2010Inventors: Lee W. Tutt, Therese M. Feller, Peter J. Cowdery-Corvan
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Publication number: 20090130608Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.Type: ApplicationFiled: November 20, 2007Publication date: May 21, 2009Inventors: Lyn M. Irving, David H. Levy, Diane C. Freeman, Cheng Yang, Peter J. Cowdery-Corvan
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Publication number: 20090130609Abstract: The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.Type: ApplicationFiled: November 20, 2007Publication date: May 21, 2009Inventors: Lyn M. Irving, Diane C. Freeman, Peter J. Cowdery-Corvan, Cheng Yang, David H. Levy
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Publication number: 20090081827Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.Type: ApplicationFiled: September 26, 2007Publication date: March 26, 2009Inventors: Cheng Yang, Lyn M. Irving, David H. Levy, Peter J. Cowdery-Corvan, Diane C. Freeman
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Publication number: 20090081842Abstract: The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.Type: ApplicationFiled: September 26, 2007Publication date: March 26, 2009Inventors: Shelby F. Nelson, David H. Levy, Lyn M. Irving, Peter J. Cowdery-Corvan, Diane C. Freeman, Carolyn R. Ellinger
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Publication number: 20090081374Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.Type: ApplicationFiled: September 26, 2007Publication date: March 26, 2009Inventors: Cheng Yang, Lyn M. Irving, David H. Levy, Peter J. Cowdery-Corvan, Diane C. Freeman
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Publication number: 20090081826Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.Type: ApplicationFiled: September 26, 2007Publication date: March 26, 2009Inventors: Peter J. Cowdery-Corvan, David H. Levy, Thomas D. Pawlik, Diane C. Freeman, Shelby F. Nelson
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Publication number: 20090081883Abstract: A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film.Type: ApplicationFiled: September 26, 2007Publication date: March 26, 2009Inventors: Diane C. Freeman, David H. Levy, Peter J. Cowdery-Corvan
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Publication number: 20080182358Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.Type: ApplicationFiled: January 26, 2007Publication date: July 31, 2008Inventors: Peter J. Cowdery-Corvan, David H. Levy, Shelby F. Nelson, Diane C. Freeman, Thomas D. Pawlik
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Patent number: 7329301Abstract: This invention relates to a composition of matter comprising associated predominantly silver nanoparticles, and a method of making the nanoparticles. It further relates to articles comprising the nanoparticles.Type: GrantFiled: September 29, 2004Date of Patent: February 12, 2008Assignee: Eastman Kodak CompanyInventors: Yun C. Chang, Eric R. Schmittou, Peter J. Cowdery-Corvan, Seshadri Jagannathan