Patents by Inventor Petr Kostelnik

Petr Kostelnik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942326
    Abstract: A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: March 26, 2024
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Petr Kostelnik, Tomas Novak, Peter Coppens, Peter Moens, Abhishek Banerjee
  • Publication number: 20220189780
    Abstract: A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.
    Type: Application
    Filed: December 16, 2020
    Publication date: June 16, 2022
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Petr KOSTELNIK, Tomas NOVAK, Peter COPPENS, Peter MOENS, Abhishek BANERJEE
  • Patent number: 9355965
    Abstract: In one embodiment, methods for making semiconductor devices are disclosed.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: May 31, 2016
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Jan {hacek over (S)}ik, Petr Kostelnik, Luká{hacek over (s)} Válek, Michal Lorenc, Milo{hacek over (s)} Pospí{hacek over (s)}il, David Lysá{hacek over (c)}ek, John Michael Parsey, Jr.
  • Publication number: 20150333016
    Abstract: In one embodiment, methods for making semiconductor devices are disclosed.
    Type: Application
    Filed: July 29, 2015
    Publication date: November 19, 2015
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Jan Sik, Petr Kostelník, Lukás Válek, Michal Lorenc, Milos Pospísil, David Lysácek, John Michael Parsey, JR.
  • Patent number: 9099481
    Abstract: In one embodiment, methods for making semiconductor devices are disclosed.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: August 4, 2015
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Jan {hacek over (S)}ik, Petr Kostelník, Luká{hacek over (s)} Válek, Michal Lorenc, Milo{hacek over (s)} Pospí{hacek over (s)}il, David Lysá{hacek over (c)}ek, John Michael Parsey, Jr.
  • Patent number: 8846500
    Abstract: At least one exemplary embodiment is directed to a method of forming a multilayered gettering structure that can be used to control wafer warpage.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: September 30, 2014
    Assignee: Semiconductor Components Industries, LLC
    Inventors: David Lysacek, Jana Vojtechovska, Lubomir Dornak, Petr Kostelnik, Lukas Valek, Petr Panek
  • Publication number: 20140264761
    Abstract: In one embodiment, methods for making semiconductor devices are disclosed.
    Type: Application
    Filed: March 7, 2014
    Publication date: September 18, 2014
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Jan Sik, Petr Kostelník, Lukás Válek, Michal Lorenc, Milos Pospìsil, David Lysácek, John Michael Parsey, JR.
  • Publication number: 20120146024
    Abstract: At least one exemplary embodiment is directed to a method of forming a multilayered Bettering structure that can be used to control wafer warpage.
    Type: Application
    Filed: December 13, 2010
    Publication date: June 14, 2012
    Inventors: David Lysacek, Jana Vojtechovska, Lubomir Dornak, Petr Kostelnik, Lukas Valek, Petr Panek