Patents by Inventor Petri Raisanen

Petri Raisanen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11926895
    Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.
    Type: Grant
    Filed: January 25, 2022
    Date of Patent: March 12, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Petri Raisanen, Michael Givens, Eric James Shero
  • Patent number: 11837483
    Abstract: An apparatus and method for reducing moisture within a wafer handling chamber is disclosed. The moisture reduction results in reduced oxidation of a wafer. The moisture reduction is made possible through use of valves and purging gas. Operation of the valves may result in improved localized purging.
    Type: Grant
    Filed: February 11, 2022
    Date of Patent: December 5, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Petri Raisanen, Ward Johnson
  • Publication number: 20230357924
    Abstract: Vapor deposition methods and related systems are provided for depositing layers comprising vanadium and oxygen. In some embodiments, the methods comprise contacting a substrate in a reaction space with alternating pulses of a vapor-phase vanadium precursor and a vapor-phase oxygen reactant. The reaction space may be purged, for example, with an inert gas, between reactant pulses. The methods may be used to fill a gap on a substrate surface. Reaction conditions, including deposition temperature and reactant pulse and purge times may be selected to achieve advantageous gap fill properties. In some embodiments, the substrate on which deposition takes place is maintained at a relatively low temperature, for example between about 50° C. and about 185° C.
    Type: Application
    Filed: April 28, 2023
    Publication date: November 9, 2023
    Inventors: Eric James Shero, Charles Dezelah, Ren-Jie Chang, Qi Xie, Perttu Sippola, Petri Raisanen
  • Publication number: 20230352556
    Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.
    Type: Application
    Filed: July 3, 2023
    Publication date: November 2, 2023
    Inventors: Chiyu Zhu, Kiran Shrestha, Petri Raisanen, Michael Eugene Givens
  • Patent number: 11791153
    Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: October 17, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Jiyeon Kim, Petri Raisanen, Sol Kim, Ying-Shen Kuo, Michael Schmotzer, Eric James Shero, Paul Ma
  • Publication number: 20230298902
    Abstract: Disclosed herein are systems and methods method for thin film deposition of molybdenum for source/drain formation. A deposition process may be performed in which the surface is contacted in the reaction chamber with a first oxygen-free molybdenum halide reactant at a first temperature, wherein said contacting with the first oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the temperature of the reaction chamber may be raised from the first temperature to a second temperature. In some embodiments, the substrate in the reaction chamber may be contacted with a second oxygen-free molybdenum halide reactant at the second temperature, wherein said contacting with the second oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the deposition at the second temperature may be repeated until a molybdenum-containing film of desired thickness is formed.
    Type: Application
    Filed: March 14, 2023
    Publication date: September 21, 2023
    Inventors: Jiyeon Kim, Petri Raisanen, Dong Li, Eric James Shero
  • Publication number: 20230238243
    Abstract: Methods of forming structures including a layer of metal carbon nitride (MCN) and of mitigating metal loss from and/or tuning the layer of metal carbon nitride are disclosed. Systems for forming the layers and mitigating metal loss and structures formed using the methods are also disclosed.
    Type: Application
    Filed: January 23, 2023
    Publication date: July 27, 2023
    Inventors: Mojtaba Samiee, Petri Raisanen, Dong Li, Yasiel Cabrera
  • Patent number: 11695054
    Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.
    Type: Grant
    Filed: August 25, 2021
    Date of Patent: July 4, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Chiyu Zhu, Kiran Shrestha, Petri Raisanen, Michael Eugene Givens
  • Publication number: 20230175129
    Abstract: Methods for depositing a thin film with improved film qualities on a hydrogen-terminated surface of a substrate are disclosed. The methods may comprise an atomic layer deposition (ALD) process comprising a plurality of deposition cycles comprising contacting the substrate with a first vapor phase metal halide or metalorganic reactant, contacting the substrate with the second vapor phase reactant, and contacting the substrate with a growth inhibitor. A growth inhibitor may be a non-consumable agent that is not incorporated into the deposited film during the deposition process and helps improve the properties of the deposited film. The growth inhibitor may comprise a vapor phase halide, such as HCl, or an organic molecule.
    Type: Application
    Filed: December 1, 2022
    Publication date: June 8, 2023
    Inventors: Jereld Lee Winkler, Petri Raisanen, Po-Yi Su
  • Publication number: 20230160057
    Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 ?) and can be used to deposit thicker films (e.g., greater than 50 ? in some cases and greater than 200 ? in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.
    Type: Application
    Filed: November 18, 2022
    Publication date: May 25, 2023
    Inventors: Jiyeon Kim, YoungChol Byun, Petri Raisanen, Dong Li, Eric James Shero, Yasiel Cabrera, Arul Vigneswar Ravichandran, Eric Christopher Stevens, Paul Ma
  • Publication number: 20230017569
    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.
    Type: Application
    Filed: September 19, 2022
    Publication date: January 19, 2023
    Inventors: Petri Raisanen, David Marquardt, Thomas Aswad
  • Publication number: 20220367173
    Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.
    Type: Application
    Filed: July 21, 2022
    Publication date: November 17, 2022
    Inventors: Suvi P. Haukka, Elina Färm, Raija H. Matero, Eva E. Tois, Hidemi Suemori, Antti Juhani Niskanen, Sung-Hoon Jung, Petri Räisänen
  • Patent number: 11501973
    Abstract: A method of depositing a material film on a substrate within a reaction chamber by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant and purging the reaction chamber with a first main purge. The method also includes: contacting the substrate with a second vapor phase reactant by two or more micro pulsing processes, wherein each micro pulsing process comprises: contacting the substrate with a micro pulse of a second vapor phase reactant; and purging the reaction chamber with a micro purge, wherein each of the micro pulses of the second vapor phase reactant provides a substantially constant concentration of the second vapor phase reactant into the reaction chamber. The method may also include; purging the reaction chamber with a second main purge. Device structures including a material film deposited by the methods of the disclosure are also disclosed.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: November 15, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: Petri Raisanen, Mark Olstad, Jose Alexandro Romero, Dong Li, Ward Johnson, Peijun Chen
  • Publication number: 20220351974
    Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.
    Type: Application
    Filed: July 7, 2022
    Publication date: November 3, 2022
    Inventors: Moataz Bellah Mousa, Peng-Fu Hsu, Ward Johnson, Petri Raisanen
  • Patent number: 11473195
    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: October 18, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: Petri Raisanen, David Marquardt, Thomas Aswad
  • Publication number: 20220285147
    Abstract: Disclosed are methods and systems for depositing layers comprising a titanium, aluminum, and carbon. The layers are formed onto a surface of a substrate. The deposition process comprises a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.
    Type: Application
    Filed: March 3, 2022
    Publication date: September 8, 2022
    Inventors: Lifu Chen, Qi Xie, Charles Dezelah, Petro Deminskyi, Giuseppe Alessio Verni, Petri Raisanen, Eric James Shero
  • Patent number: 11430656
    Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: August 30, 2022
    Assignee: ASM IP HOLDING B.V.
    Inventors: Suvi P. Haukka, Elina Färm, Raija H. Matero, Eva E. Tois, Hidemi Suemori, Antti Juhani Niskanen, Sung-Hoon Jung, Petri Räisänen
  • Patent number: 11398382
    Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 ??-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: July 26, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: Moataz Bellah Mousa, Peng-Fu Hsu, Ward Johnson, Petri Raisanen
  • Publication number: 20220165595
    Abstract: An apparatus and method for reducing moisture within a wafer handling chamber is disclosed. The moisture reduction results in reduced oxidation of a wafer. The moisture reduction is made possible through use of valves and purging gas. Operation of the valves may result in improved localized purging.
    Type: Application
    Filed: February 11, 2022
    Publication date: May 26, 2022
    Inventors: Petri Raisanen, Ward Johnson
  • Publication number: 20220149175
    Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.
    Type: Application
    Filed: January 25, 2022
    Publication date: May 12, 2022
    Inventors: Petri Raisanen, Michael Givens, Eric James Shero