Patents by Inventor Philippe Gilet

Philippe Gilet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190333963
    Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: a) providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; b) forming light-emitting diodes on the substrate, each light-emitting diode comprising a semiconductor microwire or nanowire covered by a shell; c) forming an encapsulation layer surrounding the light-emitting diodes; d) forming conductive pads on the encapsulation layer, on the side of the encapsulation layer opposite to the substrate, in contact with the light-emitting diodes; and e) forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate.
    Type: Application
    Filed: December 28, 2017
    Publication date: October 31, 2019
    Applicant: Aledia
    Inventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
  • Publication number: 20190333802
    Abstract: An electronic device including a semiconductor substrate having first and second opposite surfaces and including an electrical insulation trench extending in the substrate from the first surface to the second surface, the electrical insulation trench including lateral walls, an electrically-insulating layer covering the lateral walls, and a core made of a filling material separated from the substrate by the insulating layer and including an electrically-insulating portion extending in the substrate from the first surface and covering the core.
    Type: Application
    Filed: December 6, 2017
    Publication date: October 31, 2019
    Applicant: Aledia
    Inventors: Thomas Lacave, Philippe Gilet
  • Publication number: 20190326351
    Abstract: A method of manufacturing an optoelectronic device, comprising the successive steps of: providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; forming a stack of semiconductor layers on the first face, said stack including third and fourth opposite faces, the fourth face being on the side of the substrate, said stack including light-emitting diodes; forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate; forming conductive pads on the fourth face in at least some of the openings in contact with the stack; and forming photoluminescent blocks in at least some of the openings.
    Type: Application
    Filed: December 28, 2017
    Publication date: October 24, 2019
    Applicant: Aledia
    Inventors: Zheng-Sung Chio, Wei Sin Tan, Vincent Beix, Philippe Gilet, Pierre Tchoulfian
  • Patent number: 10453991
    Abstract: A light-emitting device comprises a set of nanowires over the whole surface of a substrate, comprising at least a first series of first nanowires and a second series of second nanowires; the first series comprising first nanowires emitting light under electrical control, connected between a first and a second type of electrical contact to emit light under electrical control, the first nanowires covered by at least one conducting layer transparent at the wavelength of the light-emitting device, layer in contact with the first type of electrical contact; the second series comprising second nanowires, encapsulated in a layer of metal allowing the first electrical contact to be formed; the second electrical contact being on the back face of the substrate, opposite to the face comprising the nanowires, and provided by a conducting layer facing the first series of nanowires. A method of fabrication of the light-emitting device is provided.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: October 22, 2019
    Assignee: ALEDIA
    Inventors: Sylvia Scaringella, Philippe Gilet, Xavier Hugon, Philippe Gibert
  • Publication number: 20190319066
    Abstract: An optoelectronic device including light-emitting diodes (LED), each light-emitting diode including a semiconductor element corresponding to a nanowire, a microwire, and/or a nanometer- or micrometer-range pyramidal structure, and a shell at least partially covering the semiconductor element and adapted to emit a radiation and for each light-emitting diode, a photoluminescent coating including a single quantum well, multiple quantum wells or an heterostructure, covering at least part of the shell and in contact with the shell or with the semiconductor element and adapted to convert by optical pumping the radiation emitted by the shell into another radiation.
    Type: Application
    Filed: December 28, 2017
    Publication date: October 17, 2019
    Applicant: Aledia
    Inventors: Wei Sin Tan, Philippe Gilet
  • Patent number: 10440788
    Abstract: An optoelectronic circuit including separate interconnected basic electronic circuits, each of which includes at least one light emitting diode and at least one integrated circuit chip that has a circuit for controlling the light emitting diode, the circuit being suitable for activating or deactivating the light emitting diode.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: October 8, 2019
    Assignee: Aledia
    Inventors: Frédéric Mercier, Xavier Hugon, Philippe Gilet
  • Patent number: 10403787
    Abstract: The invention relates to an optoelectronic device (1) comprising at least one three-dimensional semiconductor structure (2) extending along a longitudinal axis (?) substantially orthogonal to a plane of a substrate (3) on which same lies, and comprising: a first doped portion (10), extending from one surface of the substrate (3) along the longitudinal axis (?); an active portion (30) comprising a passivation layer (34) and at least one quantum well (32) covered laterally by said passivation layer (34), the quantum well (32) of the active portion (30) having a mean diameter greater than that of said first doped portion (10), said active portion (30) extending from the first doped portion (10) along the longitudinal axis (?); and a second doped portion (20), extending from the active portion (30) along the longitudinal axis (?).
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: September 3, 2019
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIA
    Inventors: Xin Zhang, Bruno-Jules Daudin, Bruno Gayral, Philippe Gilet
  • Publication number: 20190172970
    Abstract: An optoelectronic device including a support having a rear surface and a front surface opposite each other, a plurality of nucleation conductive strips forming first polarization electrodes, an intermediate insulating layer covering the nucleation conductive strips, a plurality of diodes, each of which having a first, three-dimensional doped region and a second doped region, and a plurality of top conductive strips forming second polarization electrodes and resting on the intermediate insulating layer, each top conductive strip being disposed in such a way as to be in contact with the second doped regions of a set of diodes of which the first doped regions are in contact with different nucleation conductive strips.
    Type: Application
    Filed: June 26, 2017
    Publication date: June 6, 2019
    Applicants: ALEDIA, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Florian DUPONT, Benoit AMSTATT, Vincent BEIX, Thomas LACAVE, Philippe GILET, Ewen HENAFF, Berangere HYOT, Hubert BONO
  • Publication number: 20190165040
    Abstract: An optoelectronic device including a substrate including first and second opposite surfaces and lateral electrical insulation elements extending in the substrate and delimiting first electrically-insulated semiconductor or conductive portions. The optoelectronic device includes, for each first portion, an assembly of light-emitting diodes electrically coupled to the first portion. The optoelectronic device includes an electrode layer covering all the light-emitting diodes, a protection layer covering the electrode layer, and walls extending in the protection layer and delimiting second portions surrounding or opposite the assemblies of light-emitting diodes. The walls contain at least one material from the group including air, a metal, a semiconductor material, a metal alloy, a partially transparent material, and a core made of an at least partially transparent material covered with an opaque or reflective layer.
    Type: Application
    Filed: June 22, 2017
    Publication date: May 30, 2019
    Applicant: Aledia
    Inventors: Tiphaine Dupont, Sylvia Scaringella, Erwan Dornel, Philippe Gibert, Philippe Gilet, Xavier Hugon, Fabienne Goutaudier
  • Publication number: 20190014627
    Abstract: An optoelectronic circuit including separate interconnected basic electronic circuits, each of which includes at least one light emitting diode and at least one integrated circuit chip that has a circuit for controlling the light emitting diode, the circuit being suitable for activating or deactivating the light emitting diode.
    Type: Application
    Filed: December 29, 2016
    Publication date: January 10, 2019
    Applicant: Aledia
    Inventors: Frédéric Mercier, Xavier Hugon, Philippe Gilet
  • Patent number: 10153399
    Abstract: An optoelectronic device including semiconductor elements, each semiconductor element resting on a carrier through an aperture formed in a portion at least one first part of which is insulating and covers at least partially the carrier, the height of the aperture being larger than or equal to 100 nm and smaller than or equal to 3000 nm and the ratio of the height to the smallest diameter of the aperture being higher than or equal to 0.5 and lower than or equal to 10.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: December 11, 2018
    Assignee: Aledia
    Inventors: Erwan Dornel, Benoît Amstatt, Philippe Gilet
  • Publication number: 20180351037
    Abstract: The invention relates to an optoelectronic device (1) comprising at least one three-dimensional semiconductor structure (2) extending along a longitudinal axis (?) substantially orthogonal to a plane of a substrate (3) on which same lies, and comprising: a first doped portion (10), extending from one surface of the substrate (3) along the longitudinal axis (?); an active portion (30) comprising a passivation layer (34) and at least one quantum well (32) covered laterally by said passivation layer (34), the quantum well (32) of the active portion (30) having a mean diameter greater than that of said first doped portion (10), said active portion (30) extending from the first doped portion (10) along the longitudinal axis (?); and a second doped portion (20), extending from the active portion (30) along the longitudinal axis (?).
    Type: Application
    Filed: November 28, 2016
    Publication date: December 6, 2018
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, ALEDIA
    Inventors: Xin ZHANG, Bruno-Jules DAUDIN, Bruno GAYRAL, Philippe GILET
  • Patent number: 10062808
    Abstract: The invention concerns an optoelectronic device (40) comprising: a substrate (14); a first layer (42) covering the substrate, the first layer having a thickness greater than or equal to 15 nm and comprising a first material having an extinction coefficient greater than or equal to 3 for any wavelength between 380 and 650 nm; a second layer (18) covering and in contact with the first layer, the second layer having a thickness less than or equal to 20 nm and comprising a second material having a refraction index of between 1 and 3 and an extinction coefficient less than or equal to 1.5 or any wavelength between 380 and 650 nm; and conical or frustoconical wire semiconductor elements (24) each having a light-emitting diode stack (DEL), being in contact with the second layer.
    Type: Grant
    Filed: June 25, 2014
    Date of Patent: August 28, 2018
    Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, Aledia
    Inventors: Bérangère Hyot, Philippe Gilet
  • Patent number: 10050080
    Abstract: The invention relates to an optoelectronic device (50) including: a semiconductor substrate (14) doped with a first conductivity type; semiconductor contact pads (54) or a semiconductor layer, in contact with a surface of the substrate, doped with a second conductivity type opposite to the first type; conical or frusto-conical wired semiconductor elements (26), doped with the first conductivity type, each element being in contact with one of the contact pads or with the layer; light-emitting semiconductor portions (30), each portion at least partially covering one of the semiconductor elements; and a circuit (S) for polarizing the contact pads (54) or the layer. The contact pads or the layer are selected among: aluminum nitride, boron nitride, silicon carbide, magnesium nitride, gallium and magnesium nitride, or a combination of same and the nitride compounds thereof.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: August 14, 2018
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Aledia
    Inventors: Philippe Gilet, Alexei Tchelnokov, Ivan Christophe Robin
  • Patent number: 9768350
    Abstract: An optoelectronic device includes at least first and second light-emitting nanowires on a support, each comprising an area for the injection of holes and an area for the injection of electrons, a series electric connection including a connection nanowire on the support, which includes a first region forming an electric path with the hole injection area of the first nanowire, a second region forming an electric path with the electron injection area of the second nanowire, and a third region enabling a current to flow between first and second regions. Also included are a first conductive area connecting the hole injection area of the first nanowire and the first region of the connection nanowire and electrically insulated from the second nanowire, and a second conductive area connecting the second region of the connection nanowire and electron injection area of the second nanowire and electrically insulated from the first nanowire.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: September 19, 2017
    Assignee: Commissariat A L'Energie Atomique Et Aux Energies Alternatives
    Inventors: Anne-Laure Bavencove, Philippe Gilet, Pierre Moller
  • Patent number: 9728679
    Abstract: An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: August 8, 2017
    Assignees: ALEDIA, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES
    Inventors: Nathalie Dechoux, Benoit Amstatt, Philippe Gilet
  • Patent number: 9537044
    Abstract: A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with
    Type: Grant
    Filed: October 23, 2013
    Date of Patent: January 3, 2017
    Assignees: ALEDIA, Commissariat A L'Energie Atomique Et Aux Energies
    Inventors: Philippe Gilet, Xavier Hugon, David Vaufrey, Hubert Bono, Bérangère Hyot
  • Patent number: 9537050
    Abstract: The invention relates to an optoelectronic device and to the method for manufacturing same. The optoelectronic device (45), according to the invention includes, in particular: a semiconductor substrate (46) doped with a first type of conductivity; semiconductor contact pads (18) or a semiconductor layer on a surface (16) of the substrate which are/is respectively doped with a second type of conductivity that is the opposite of the first type; and semiconductor elements (24), each semiconductor element being in contact with a contact pad or with the layer.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: January 3, 2017
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Aledia
    Inventors: Philippe Gilet, Alexei Tchelnokov, Ivan Christophe Robin
  • Publication number: 20160322536
    Abstract: An optoelectronic device including semiconductor elements, each semiconductor element resting on a carrier through an aperture formed in a portion at least one first part of which is insulating and covers at least partially the carrier, the height of the aperture being larger than or equal to 100 nm and smaller than or equal to 3000 nm and the ratio of the height to the smallest diameter of the aperture being higher than or equal to 0.5 and lower than or equal to 10.
    Type: Application
    Filed: December 23, 2014
    Publication date: November 3, 2016
    Applicant: Aledia
    Inventors: Erwan Dornel, Benoît Amstatt, Philippe Gilet
  • Publication number: 20160284938
    Abstract: The invention concerns an optoelectronic device (40) comprising: a substrate (14); a first layer (42) covering the substrate, the first layer having a thickness greater than or equal to 15 nm and comprising a first material having an extinction coefficient greater than or equal to 3 for any wavelength between 380 and 650 nm; a second layer (18) covering and in contact with the first layer, the second layer having a thickness less than or equal to 20 nm and comprising a second material having a refraction index of between 1 and 3 and an extinction coefficient less than or equal to 1.5 or any wavelength between 380 and 650 nm; and conical or frustoconical wire semiconductor elements (24) each having a light-emitting diode stack (DEL), being in contact with the second layer.
    Type: Application
    Filed: June 25, 2014
    Publication date: September 29, 2016
    Applicants: Commissariat à l'énergie atomique et aux énergies alternatives, Aledia
    Inventors: Bérangère HYOT, Philippe GILET