Abstract: The present disclosure provides a method, computer system and computer program product for determining interruption points based on emotion values in a content. According to the method, emotion values of one or more emotion catalogs at one or more time points of the content to be interrupted can be determined, and one or more interruption points can be determined based on the determined emotion values.

Abstract: A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: A nebulizer includes an aerosolizer, a controller, a power converter, a power source and a voltage detector. When the aerosolizer is requested to eject aerosolized liquid at a standard spraying speed, the controller sets a parameter value of a conversion parameter based on a stored standard value, transmits the parameter value to the power converter, and controls the power source to supply electric power. The power converter converts the electric power based on the parameter value to power the aerosolizer. Based on a stored expected value and a detected value generated by the voltage detector in response to operation of the aerosolizer, the controller controls the power source to adjust the voltage of the electric power supplied thereby.

Abstract: A data writing method, a memory control circuit unit and a memory storage apparatus are provided. The method includes: receiving first data and second data from a host system; generating a first array error correcting code based on the first data, and generating a second array error correcting code based on the second data; programming a first group including the first array error correcting code into a first chip enable group by using a first programming mode; and programming a second group including the second array error correcting code into a second chip enable group by using a second programming mode.

Abstract: An apparatus having a first portion including a first front wall, a first rear wall, and a bottom wall integrally coupled to the first front wall and the first rear wall, and pivotal pin structures integrally coupled to and extending from the first rear wall. The apparatus includes a second portion having a second front wall, a second rear wall, and a top wall integrally coupled to the second front wall and the second rear wall, and pin holders integrally coupled to and extending from the second rear wall and at an offset angle with reference to the top wall. The pivotal pin structure includes a base support connected to the first rear wall and a shaft connected to the base support, and the pin holder defines an opening sized and shaped to accept the shaft. The first and second portions are sized and shaped to be pivotally movable between open and closed configurations.

Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Abstract: A method for forming a memory device includes the steps of providing a substrate, forming an isolation structure in the substrate to define a plurality of active regions in the substrate, the active regions respectively comprising two terminal portions and a central portion between the terminal portions, forming a plurality of island features on the substrate, wherein each of the island features covers two of the terminals portions respectively belonging to two of the active regions, performing a first etching process, using the island features as an etching mask to etch the substrate to define a plurality of island structures and a first recessed region surrounding the island structures on the substrate, and removing the island features to expose the island structures.

Abstract: A light source structure, a backlight module and a display are provided. The light source structure includes a substrate and plural light source groups. The light source groups are arranged on the substrate, in which each of the light source groups includes plural light-emitting units, and there is a first distance between any two adjacent light-emitting units in each of the light source groups, and there is a second distance between two closest light-emitting units that are respectively in any two adjacent light source groups. The second distance is smaller than the first distance.

Abstract: A confirmation method for a tool of a machining process, applied to detect a health status of a tool changing device, includes following steps: obtaining tool data of a processing equipment from a storage unit of the tool through a first wireless transmission module; interpreting tool data, and converting an interpreting result into a tool assembling status data string; interpreting a tool acquirement corresponding to a process of a processing program, and converting the interpreting result into a process-related tool acquirement data string; and, comparing the tool assembling status data string with the process-related tool acquirement data string, and outputting a program and tool matching data string. In addition, a system for confirming a tool of a machining process is also provided.

Abstract: Various embodiments of the present application are directed towards an integrated memory chip comprising a memory array with a strap-cell architecture that reduces the number of distinct strap-cell types and that reduces strap-line density. In some embodiments, the memory array is limited to three distinct types of strap cells: a source line/erase gate (SLEG) strap cell; a control gate/word line (CGWL) strap cell; and a word-line strap cell. The small number of distinct strap-cell types simplifies design of the memory array and further simplifies design of a corresponding interconnect structure. Further, in some embodiments, the three distinct strap-cell types electrically couple word lines, erase gates, and control gates to corresponding strap lines in different metallization layers of an interconnect structure. By spreading the strap lines amongst different metallization layers, strap-line density is reduced.

Abstract: A light source structure, a backlight module and a display are provided. The light source structure includes a substrate and plural light source groups. The light source groups are arranged on the substrate, in which each of the light source groups includes plural light-emitting units, and there is a first distance between any two adjacent light-emitting units in each of the light source groups, and there is a second distance between two closest light-emitting units that are respectively in any two adjacent light source groups. The second distance is smaller than the first distance.

Abstract: Orchestrated chat services utilizing a centralized chat service with access to a plurality of chatbots registered to the chat service. User's seeking support from the orchestrated chat service interact with a single user interface, while the backend of the chat service extracts the intents and entities from the user's input into the chat service. The orchestrated chat service identifies one or more classifications of chatbots suitable for responding to the user's input within a prescribed level of confidence dictated by one or more orchestration rules and selects a chatbot predicted to most likely respond to the user's input in a correct and accurate manner. The orchestrated chat service formats the user input and chat history into format of the selected chatbot's API, forwards user input and history to the selected chatbot and returns the response from the selected chatbot to the user interface of the orchestrated chat service.

Abstract: A serial bidirectional communication method is provided. The method includes: performing a downlink transmission and performing an uplink transmission. The downlink transmission includes: receiving first downlink data through a first transmission terminal, wherein the first downlink data comprises at least one control command, and the at least one control command is cascaded and configured to control at least one electronic device; removing one, corresponding to a local device, of the at least one control command from the first downlink data to form second downlink data, wherein the local device is one of the at least one electronic device; and when there is a control command remaining in the second downlink, outputting the second downlink data through a second transmission terminal. The uplink transmission includes outputting first uplink data through the first transmission terminal. The first uplink data includes local information generated by the local device.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a semiconductor layer on a substrate; removing part of the semiconductor layer and part of the substrate to form a trench; forming a liner in the trench; removing part of the liner to form a spacer adjacent to two sides of the trench; forming a conductive layer in the trench; forming a metal layer on the conductive layer; forming a mask layer on the metal layer; and patterning the mask layer, the metal layer, and the conductive layer to form a bit line structure.

Abstract: A method for forming a memory device is disclosed, including providing a substrate, forming an isolation structure and plural active regions in the substrate, forming a plurality of island features on the substrate respectively covering two of the terminal portions of the active regions, using the island features as an etching mask to etch the substrate to perform a first etching process to define a first recessed region and plural island structures on the substrate. The island structures respectively comprise the two terminal portions of the active regions and the first recessed region comprises the central portions of the active regions.

Abstract: An apparatus having a first portion including a first front wall, a first rear wall, and a bottom wall integrally coupled to the first front wall and the first rear wall, and pivotal pin structures integrally coupled to and extending from the first rear wall. The apparatus includes a second portion having a second front wall, a second rear wall, and a top wall integrally coupled to the second front wall and the second rear wall, and pin holders integrally coupled to and extending from the second rear wall and at an offset angle with reference to the top wall. The pivotal pin structure includes a base support connected to the first rear wall and a shaft connected to the base support, and the pin holder defines an opening sized and shaped to accept the shaft. The first and second portions are sized and shaped to be pivotally movable between open and closed configurations.

Abstract: A light source structure, a backlight module and a display are provided. The light source structure includes a substrate and plural light source groups. The light source groups are arranged on the substrate, in which each of the light source groups includes plural light-emitting units, and there is a first distance between any two adjacent light-emitting units in each of the light source groups, and there is a second distance between two closest light-emitting units that are respectively in any two adjacent light source groups. The second distance is smaller than the first distance.

Abstract: Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.

Abstract: Various embodiments of the present application are directed towards an integrated memory chip with an enhanced device-region layout for reduced leakage current and an enlarged word-line etch process window (e.g., enhanced word-line etch resiliency). In some embodiments, the integrated memory chip comprises a substrate, a control gate, a word line, and an isolation structure. The substrate comprises a first source/drain region. The control gate and the word line are on the substrate. The word line is between and borders the first source/drain region and the control gate and is elongated along a length of the word line. The isolation structure extends into the substrate and has a first isolation-structure sidewall. The first isolation-structure sidewall extends laterally along the length of the word line and underlies the word line.